Abstract: A lithographic projection apparatus comprising a radiation system for supplying a projection beam of electromagnetic radiation in the extreme ultraviolet (EUV) range, a support structure for supporting patterning structure, the patterning structure serving to pattern the projection beam according to a desired pattern, a substrate table for holding a substrate and a projection system for projecting the patterned beam onto a target portion of the substrate. A space within the apparatus, which space contains a mirror, is supplied with a hydrocarbon gas which forms a protective cap layer on the mirror surface. The partial pressure of the hydrocarbon gas in the space is controlled in response to variations in the background pressure in the space and/or in the reflectivity of the mirror, such that the thickness of the cap layer on the mirror remains within an acceptable range.

Abstract: A lithographic projection apparatus includes a radiation system for providing a projection beam of radiation having a wavelength &lgr;1 smaller than 50 nm; a support structure for supporting patterning structure, the patterning structure serving to pattern the projection beam according to a desired pattern; a substrate table for holding a substrate; and a projection system for projecting the patterned beam onto a target portion of the substrate. The apparatus further includes a radiation sensor which is located so as to be able to receive radiation out of the projection beam, said sensor comprising a radiation-sensitive material which converts incident radiation of wavelength &lgr;1 into secondary radiation; and sensing means capable of detecting said secondary radiation emerging from said layer.

Abstract: A lithographic projection apparatus includes a radiation system for providing a projection beam of radiation having a wavelength &lgr;1 smaller than 50 nm; a support structure for supporting patterning structure, the patterning structure serving to pattern the projection beam according to a desired pattern; a substrate table for holding a substrate; and a projection system for projecting the patterned beam onto a target portion of the substrate. The apparatus further includes a radiation sensor which is located so as to be able to receive radiation out of the projection beam, said sensor comprising a radiation-sensitive material which converts incident radiation of wavelength &lgr;1 into secondary radiation; and sensing means capable of detecting said secondary radiation emerging from said layer.

Abstract: A lithographic projection apparatus comprising a radiation system for supplying a projection beam of radiation, a mask table for holding a mask, a substrate table for holding a substrate and a projection system for imaging an irradiated portion of the mask onto a target portion of the substrate. Either or both of the radiation system and the projection system is supplied with an inert gas at a pressure of from 0.1 to 10 Pa in order to suppress contamination, for example by hydrocarbon molecules, of any optical components in the system(s).

Abstract: A lithographic projection apparatus has a discharge plasma radiation source that is contained in a vacuum chamber. The radiation source is to generate a beam of EUV radiation. A chamber wall of the vacuum chamber incorporates a channel structure comprising adjacent narrow channels separated by walls that are substantially parallel to a propagation direction of the radiation generated so as to pass the radiation from the vacuum chamber through the structure to another subsequent vacuum chamber. In the subsequent vacuum chamber, a much higher vacuum level (lower pressure) can be maintained than is present in the vacuum chamber of the radiation source.

Abstract: A lithographic projection apparatus includes an illumination system for supplying a projection beam of electromagnetic radiation having a wavelength less than or equal to 50 nm, a mask table provided with a mask holder for holding a mask, a substrate table provided with a substrate holder for holding a substrate, a projection system for imaging an irradiated portion of the mask onto a target portion of the substrate, wherein the radiation system comprises an integrating element disposed in the path of the radiation, the integrating element comprising a hollow waveguide.

Abstract: A radiation source of a radiation system of a lithographic projection apparatus comprises electrodes for creating a discharge in a space between them such that the discharge collapses into a pinch volume. The collapsing discharge creates a highly ionized, high temperature plasma in the pinch volume. A working fluid is ejected from a jet nozzle into the pinching volume and is thereby raised to a high temperature state and emits extreme ultraviolet radiation.

Abstract: A lithographic projection apparatus has a discharge plasma radiation source that is contained in a vacuum chamber. The radiation source is to generate a beam of EUV radiation. A chamber wall of the vacuum chamber incorporates a channel structure comprising adjacent narrow channels separated by walls that are substantially parallel to a propagation direction of the radiation generated so as to pass the radiation from the vacuum chamber through the structure to another subsequent vacuum chamber. In the subsequent vacuum chamber, a much higher vacuum level (lower pressure) can be maintained than is present in the vacuum chamber of the radiation source.

Abstract: A lithographic projection apparatus comprising a radiation system for supplying a projection beam of radiation, a mask table for holding a mask, a substrate table for holding a substrate and a projection system for imaging an irradiated portion of the mask onto a target portion of the substrate. Either or both of the radiation system and the projection system is supplied with an inert gas at a pressure of from 0.1 to 10 Pa in order to suppress contamination, for example by hydrocarbon molecules, of any optical components in the system(s).

Abstract: A lithographic projection apparatus comprising a radiation system for supplying a projection beam of electromagnetic radiation in the extreme ultraviolet (EUV) range, a support structure for supporting patterning structure, the patterning structure serving to pattern the projection beam according to a desired pattern, a substrate table for holding a substrate and a projection system for projecting the patterned beam onto a target portion of the substrate. A space within the apparatus, which space contains a mirror, is supplied with a hydrocarbon gas which forms a protective cap layer on the mirror surface. The partial pressure of the hydrocarbon gas in the space is controlled in response to variations in the background pressure in the space and/or in the reflectivity of the mirror, such that the thickness of the cap layer on the mirror remains within an acceptable range.

Abstract: A lithographic projection apparatus includes a radiation system for providing a projection beam of radiation having a wavelength &lgr;1 smaller than 50 nm; a support structure for supporting patterning structure, the patterning structure serving to pattern the projection beam according to a desired pattern; a substrate table for holding a substrate; and a projection system for projecting the patterned beam onto a target portion of the substrate. The apparatus further includes a radiation sensor which is located so as to be able to receive radiation out of the projection beam, said sensor comprising a radiation-sensitive material which converts incident radiation of wavelength &lgr;1 into secondary radiation; and sensing means capable of detecting said secondary radiation emerging from said layer.

Abstract: A radiation source of a radiation system of a lithographic projection apparatus comprises electrodes for creating a discharge in a space between them such that the discharge collapses into a pinch volume. The collapsing discharge creates a highly ionized, high temperature plasma in the pinch volume. A working fluid is ejected from a jet nozzle into the pinching volume and is thereby raised to a high temperature state and emits extreme ultraviolet radiation.