Abstract: A method for attaching and detaching a substrate from a bonded stack is disclosed. A broadband light-absorbing material is combined with an adhesive material to form a broadband light-absorbing adhesive. A layer of the broadband light-absorbing adhesive is then applied on one side of a transparent carrier. A substrate is placed on the broadband light-absorbing adhesive and the transparent carrier to form a bonded stack. The substrate can be a wafer or a polymeric film. At this point, processing steps can be performed on the substrate. After the processing steps have been completed, a light pulse from a flashlamp is utilized to heat up the broadband light-absorbing adhesive in order to loosen the substrate from the bonded stack such that the substrate can be easily detached from the bonded stack.

Abstract: An apparatus for debonding a wafer from a bonded wafer stack is disclosed. The apparatus includes a flashlamp, a flashlamp control unit, and a wafer debonding unit. A processed wafer can be debonded from a bonded wafer stack by applying light pulses from the flashlamp. The flashlamp is controlled by the flashlamp control unit that includes a capacitor bank, a power supply for charging the capacitor bank, an IGBT-based switching device, and a frequency controller. The wafer debonding unit includes a debonding vacuum table, a wafer feeding robot for conveying the bonded wafer stack to the debonding vacuum table, a set of suction cups for applying vacuum to the bonded wafer stack when light pulses are being emitted by the flashlamp to debond the processed wafer from the bonded wafer stack.

Abstract: A method for attaching and detaching a substrate from a bonded stack is disclosed. A broadband light-absorbing material is combined with an adhesive material to form a broadband light-absorbing adhesive. A layer of the broadband light-absorbing adhesive is then applied on one side of a transparent carrier. A substrate is placed on the broadband light-absorbing adhesive and the transparent carrier to form a bonded stack. The substrate can be a wafer or a polymeric film. At this point, processing steps can be performed on the substrate. After the processing steps have been completed, a light pulse from a flashlamp is utilized to heat up the broadband light-absorbing adhesive in order to loosen the substrate from the bonded stack such that the substrate can be easily detached from the bonded stack.

Abstract: A method for connecting an electronic component to a circuit board is disclosed. Initially, a substrate and an electronic component having solder located between them are placed under a flashlamp. Multiple light pulses from the flashlamp are applied to the electronic component, substrate and solder until the solder reflows. During the application of the light pulses, the power of one of the light pulses from the flashlamp and the temperature of the electronic component are measured, the measured power is converted to radiant exposure, and in response to the measured temperature of the electronic component, the duty cycle of a next light pulse is adjusted adaptively according to the radiant exposure of the one light pulse.

Abstract: Methods of making a semiconductor layer from nanocrystals are disclosed. A film of nanocrystals capped with a ligand can be deposited onto a substrate; and the nanocrystals can be irradiated with one or more pulses of light. The pulsed light can be used to substantially remove the ligands from the nanocrystals and leave the nanocrystals unsintered or sintered, thereby providing a semiconductor layer. Layered structures comprising these semiconductor layers with an electrode are also disclosed. Devices comprising such layered structures are also disclosed.

Abstract: A method for connecting an electronic component to a circuit board is disclosed. Initially, a substrate and an electronic component having solder located between them are placed under a flashlamp. Multiple light pulses from the flashlamp are applied to the electronic component, substrate and solder until the solder reflows. During the application of the light pulses, the power of one of the light pulses from the flashlamp and the temperature of the electronic component are measured, the measured power is converted to radiant exposure, and in response to the measured temperature of the electronic component, the duty cycle of a next light pulse is adjusted adaptively according to the radiant exposure of the one light pulse.

Abstract: Methods of making a semiconductor layer from nanocrystals are disclosed. A film of nanocrystals capped with a ligand can be deposited onto a substrate; and the nanocrystals can be irradiated with one or more pulses of light. The pulsed light can be used to substantially remove the ligands from the nanocrystals and leave the nanocrystals unsintered or sintered, thereby providing a semiconductor layer. Layered structures comprising these semiconductor layers with an electrode are also disclosed. Devices comprising such layered structures are also disclosed.

Abstract: Methods of making a semiconductor layer from nanocrystals are disclosed. A film of nanocrystals capped with a ligand can be deposited onto a substrate; and the nanocrystals can be irradiated with one or more pulses of light. The pulsed light can be used to substantially remove the ligands from the nanocrystals and leave the nanocrystals unsintered or sintered, thereby providing a semiconductor layer. Layered structures comprising these semiconductor layers with an electrode are also disclosed. Devices comprising such layered structures are also disclosed.

Abstract: Methods of making a semiconductor layer from nanocrystals are disclosed. A film of nanocrystals capped with a ligand can be deposited onto a substrate; and the nanocrystals can be irradiated with one or more pulses of light. The pulsed light can be used to substantially remove the ligands from the nanocrystals and leave the nanocrystals unsintered or sintered, thereby providing a semiconductor layer. Layered structures comprising these semiconductor layers with an electrode are also disclosed. Devices comprising such layered structures are also disclosed.

Abstract: A nanoparticle composition is disclosed comprising a copper indium gallium selenide, a copper indium sulfide, or a combination thereof. Also disclosed is a layer comprising the nanoparticle composition. A photovoltaic device comprising the nanoparticle composition and/or the absorbing layer is disclosed. Also disclosed are methods for producing the nanoparticle compositions, absorbing layers, and photovoltaic devices described herein.