Abstract: Embodiments involve smart device fabrication for semiconductor processing tools via precision patterning. In one embodiment, a method of manufacturing a semiconductor processing tool component includes providing a substrate of the semiconductor processing tool component, patterning the substrate to form a sensor directly on the substrate, and depositing a top layer over the sensor. The sensor may include, for example, a temperature or strain sensor. The method can also include patterning the substrate to form one or more of: heaters, thermistors, and electrodes on the substrate. In one embodiment, the method involves patterning a surface of the component oriented towards a plasma region inside of the semiconductor processing tool.

Abstract: Disclosed herein are systems and methods for polishing internal surfaces of apertures in semiconductor processing chamber components. A method includes providing a ceramic article having at least one aperture, the ceramic article being a component for a semiconductor processing chamber. The method further includes polishing the at least one aperture based on flowing an abrasive media through the at least one aperture of the ceramic article, the abrasive media including a polymer base and a plurality of abrasive particles.

Abstract: Disclosed herein are methods for producing an ultra-dense and ultra-smooth ceramic coating. A method includes feeding a slurry of ceramic particles into a plasma sprayer. The plasma sprayer generates a stream of particles directed toward the substrate, forming a ceramic coating on the substrate upon contact.

Abstract: A chamber component comprises a body and a fluorinated thin film protective layer over at least one surface of the body. The fluorinated thin film protective layer does not react with process gasses having Fluorine based chemistry. The fluorinated thin film protective layer may be a YF3 layer.

Abstract: A method of manufacturing an article comprises providing an article such as a chamber component for an etch reactor. A plasma spray deposition process is performed for deposit a first protective layer over at least one surface of the chamber component. The first protective layer is a plasma resistant ceramic having a thickness of greater than approximately 50 microns and a plurality of cracks and pores. An ion assisted deposition (IAD) process is then performed to deposit a second protective layer over the first protective layer. The second protective layer is a plasma resistant rare earth oxide having a thickness of less than 50 microns and a porosity of less than 1%. The second protective layer seals the plurality of cracks and pores of the first protective layer.

Abstract: An article such as a susceptor includes a body of a thermally conductive material coated by a first protective layer and a second protective layer over a surface of the body. The first protective layer is a thermally conductive ceramic. The second protective layer covers the first protective layer and is a plasma resistant ceramic thin film that is resistant to cracking at temperatures of 650 degrees Celsius.

Abstract: A method of manufacturing an article includes providing a component for an etch reactor. Ion beam sputtering with ion assisted deposition (IBS-IAD) is then performed to deposit a protective layer on at least one surface of the component, wherein the protective layer is a plasma resistant film having a thickness of less than 1000 ?m.

Abstract: Embodiments involve smart device fabrication for semiconductor processing tools via precision patterning. In one embodiment, a method of manufacturing a semiconductor processing tool component includes providing a substrate of the semiconductor processing tool component, patterning the substrate to form a sensor directly on the substrate, and depositing a top layer over the sensor. The sensor may include, for example, a temperature or strain sensor. The method can also include patterning the substrate to form one or more of: heaters, thermistors, and electrodes on the substrate. In one embodiment, the method involves patterning a surface of the component oriented towards a plasma region inside of the semiconductor processing tool.

Abstract: A method for coating a component for use in a semiconductor chamber for plasma etching includes providing a component for use in a semiconductor manufacturing chamber, loading the component into a deposition chamber, cold spray coating a metal powder onto the component to form a coating on the component, and anodizing the coating to form an anodization layer.

Abstract: A gas comprising oxygen is supplied to a plasma source. A plasma jet comprising oxygen plasma particles is generated from the gas. A contaminant is removed from the component using the oxygen plasma particles.

Abstract: A method of manufacturing an article comprises providing a lid or nozzle for an etch reactor. Ion assisted deposition (IAD) is then performed to deposit a protective layer on at least one surface of the lid or nozzle, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 ?m and an average surface roughness of 10 micro-inches or less.

Abstract: A method of manufacturing an article comprises providing a ring for an etch reactor. Ion assisted deposition (IAD) is then performed to deposit a protective layer on at least one surface of the ring, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 ?m and an average surface roughness of less than 6 micro-inches.

Abstract: An article comprises a body and at least one protective layer on at least one surface of the body. The at least one protective layer is a thin film having a thickness of less than approximately 20 microns that comprises a ceramic selected from a group consisting of Y3Al5O12, Y4Al2O9, Er2O3, Gd2O3, Er3Al5O12, Gd3Al5O12 and a ceramic compound comprising Y4Al2O9 and a solid-solution of Y2O3—ZrO2.

Abstract: A substrate support assembly comprises a ceramic body and a thermally conductive base bonded to a lower surface of the ceramic body. The substrate support assembly further comprises a protective layer covering an upper surface of the ceramic body, wherein the protective layer comprises at least one of yttrium aluminum garnet (YAG) or a ceramic compound comprising Y4Al2O9 and a solid-solution of Y2O3—ZrO2.

Abstract: In a process for friction stir welding together pieces of dissimilar material, a first piece of a second metal is overlaid onto a first piece of a first metal that is dissimilar from the second metal such that at least a portion of the first piece of second metal overlaps a portion of the first piece of first metal. A second piece of the first metal is placed in side-to-side relationship with the first piece of second metal and overlies another portion of the first piece of first metal. The relative arrangement between the second piece of first metal and the first piece of second metal define a joint line overlying the first piece of first metal. The first piece of first metal, the first piece of second metal, and the second piece of first metal are friction stir welded together along the joint line.

Abstract: In a process for friction stir welding together pieces of dissimilar material, a first piece of a second metal is overlaid onto a first piece of a first metal that is dissimilar from the second metal such that at least a portion of the first piece of second metal overlaps a portion of the first piece of first metal. A second piece of the first metal is placed in side-to-side relationship with the first piece of second metal and overlies another portion of the first piece of first metal. The relative arrangement between the second piece of first metal and the first piece of second metal define a joint line overlying the first piece of first metal. The first piece of first metal, the first piece of second metal, and the second piece of first metal are friction stir welded together along the joint line.