Patents by Inventor Vainateya

Vainateya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Algainn-based lasers produced using etched facet technology
    Patent number: 8306086
    Abstract: A process for fabricating AlGaInN-based photonic devices, such as lasers, capable of emitting blue light employs etching to form device waveguides and mirrors, preferably using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE.
    Type: Grant
    Filed: February 15, 2012
    Date of Patent: November 6, 2012
    Assignee: Binoptics Corporation
    Inventors: Alex A. Behfar, Alfred T. Schremer, Cristian B. Stagarescu, Vainateya
  • AlGaInN-based lasers produced using etched facet technology
    Patent number: 8290013
    Abstract: A process for fabricating AlGaInN-based photonic devices, such as lasers, capable of emitting blue light employs dry etching to form device waveguides and mirrors. The dry etching is preferably performed using a Chemically Assisted Ion Beam Etching (CAIBE) system.
    Type: Grant
    Filed: February 15, 2012
    Date of Patent: October 16, 2012
    Assignee: Binoptics Corporation
    Inventors: Alex A. Behfar, Alfred T. Schremer, Cristian B. Stagarescu, Vainateya
  • AlGaInN-Based Lasers Produced Using Etched Facet Technology
    Publication number: 20120149141
    Abstract: A process for fabricating AlGaInN-based photonic devices, such as lasers, capable of emitting blue light employs dry etching to form device waveguides and mirrors. The dry etching is preferably performed using a Chemically Assisted Ion Beam Etching (CAIBE) system.
    Type: Application
    Filed: February 15, 2012
    Publication date: June 14, 2012
    Inventors: Alex A. Behfar, Alfred T. Schremer, Cristian B. Stagarescu, Vainateya
  • ALGAINN-BASED LASERS PRODUCED USING ETCHED FACET TECHNOLOGY
    Publication number: 20120142123
    Abstract: A process for fabricating AlGaInN-based photonic devices, such as lasers, capable of emitting blue light employs etching to form device waveguides and mirrors, preferably using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE.
    Type: Application
    Filed: February 15, 2012
    Publication date: June 7, 2012
    Inventors: ALEX A. BEHFAR, Alfred T. Schremer, Cristian B. Stagarescu, Vainateya
  • AlGaInN-based lasers produced using etched facet technology
    Patent number: 8130806
    Abstract: A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE.
    Type: Grant
    Filed: June 20, 2006
    Date of Patent: March 6, 2012
    Assignee: BinOptics Corporation
    Inventors: Alex A. Behfar, Alfred T. Schremer, Cristian B. Stagarescu, Vainateya
  • AlGaInN-based lasers produced using etched facet technology
    Publication number: 20060291514
    Abstract: A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE.
    Type: Application
    Filed: June 20, 2006
    Publication date: December 28, 2006
    Applicant: BinOptics Corporation
    Inventors: Alex Behfar, Alfred Schremer, Cristian Stagarescu, Vainateya