Patents by Inventor Valentin Fedl

Valentin Fedl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120097859
    Abstract: The invention relates to an operating method for a semiconductor structure (1), particularly for a detecting element, in a semiconductor detector, particularly in a blocked impurity band detector, comprising the following steps: a) generating free signal charge carriers (2) in the semiconductor detector by impinging radiation, b) collecting the radiation-generated signal charge carriers (2) in a storage area (IG) in the semiconductor structure (1), wherein the storage area (IG) forms a potential well in which the signal charge carriers (2) are captured, c) deleting the signal charge carriers (2) collected in the storage area (IG) in IG that the signal charge carriers (2) are removed from the storage area (IG), d) generating an electric tunnel field in the area of the storage area (IG), so that the signal charge carriers (2) present in the storage area (IG) can tunnel out of the potential well of the storage area (IG) using the tunnel effect, into a conduction band in which the signal charge carriers (2) are f
    Type: Application
    Filed: May 12, 2010
    Publication date: April 26, 2012
    Applicant: Max-Planck-Gesellschaft zur Foerderung der Wissens chaften e.V.
    Inventors: Gerhard Lutz, Lothar Strueder, Valentin Fedl