Patents by Inventor Valentin Lerner

Valentin Lerner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10630070
    Abstract: A device for overcurrent protection, the device may include a main transistor that is configured to supply, via an output node, a load current to a load; a current limiting resistor; a replica transistor that is configured to provide a replica current to the current limiting resistor; wherein the replica current is smaller than the load current, wherein a value of the replica current is responsive to a value of the load current; an amplifier; a current limiting transistor; a variable signal source that is configured to output a reference signal; wherein a value of the reference signal is based on a main transistor voltage; wherein the amplifier is configured to prevent the load current from exceeding a first load current threshold by biasing the main transistor and the replica transistor with a bias signal; wherein a value of the bias signal is responsive to the reference signal and to the replica current.
    Type: Grant
    Filed: April 18, 2017
    Date of Patent: April 21, 2020
    Inventors: Alexander Faingersh, Valentin Lerner, Erez Sarig, Raz Reshef
  • Patent number: 10591518
    Abstract: Some demonstrative embodiments include an apparatus including a low-voltage detector to detect whether a voltage difference between a first voltage of a first voltage domain and a second voltage of the first voltage domain is lower than a predefined voltage.
    Type: Grant
    Filed: September 5, 2018
    Date of Patent: March 17, 2020
    Assignee: TOWER SEMICONDUCTOR LTD.
    Inventors: Dan Pollak, Valentin Lerner, Sharon Brandelstein Sharkaz
  • Publication number: 20200072878
    Abstract: Some demonstrative embodiments include an apparatus including a low-voltage detector to detect whether a voltage difference between a first voltage of a first voltage domain and a second voltage of the first voltage domain is lower than a predefined voltage.
    Type: Application
    Filed: September 5, 2018
    Publication date: March 5, 2020
    Inventors: Dan Pollak, Valentin Lerner, Sharon Brandelstein Sharkaz
  • Patent number: 10536148
    Abstract: Some demonstrative embodiments include a level shifter to shift a high logic level and a low logic level of a Direct Current (DC) control signal of a first voltage domain to a high logic level and a low logic level of a second voltage domain, respectively.
    Type: Grant
    Filed: November 1, 2017
    Date of Patent: January 14, 2020
    Assignee: TOWER SEMICONDUCTOR LTD.
    Inventors: Valentin Lerner, Dan Pollak
  • Publication number: 20190131971
    Abstract: Some demonstrative embodiments include a level shifter to shift a high logic level and a low logic level of a Direct Current (DC) control signal of a first voltage domain to a high logic level and a low logic level of a second voltage domain, respectively.
    Type: Application
    Filed: November 1, 2017
    Publication date: May 2, 2019
    Inventors: Valentin Lerner, Dan Pollak
  • Publication number: 20180301896
    Abstract: A device for overcurrent protection, the device may include a main transistor that is configured to supply, via an output node, a load current to a load; a current limiting resistor; a replica transistor that is configured to provide a replica current to the current limiting resistor; wherein the replica current is smaller than the load current, wherein a value of the replica current is responsive to a value of the load current; an amplifier; a current limiting transistor; a variable signal source that is configured to output a reference signal; wherein a value of the reference signal is based on a main transistor voltage; wherein the amplifier is configured to prevent the load current from exceeding a first load current threshold by biasing the main transistor and the replica transistor with a bias signal; wherein a value of the bias signal is responsive to the reference signal and to the replica current.
    Type: Application
    Filed: April 18, 2017
    Publication date: October 18, 2018
    Applicant: Tower Semiconductor LTD.
    Inventors: Alexander Faingersh, Valentin Lerner, Erez Sarig, Raz Reshef
  • Patent number: 9239584
    Abstract: A self-adjustable current source control circuit utilizes a replica output stage, a sink current source that generates a reference current, and a negative feedback circuit to generate a sink current between a linear regulator output terminal and ground only when a load circuit connected to the linear regulator is in a low power consuming state. The replica output stage includes an 1:N scaled replica of the linear regulator's NMOS (or NPN) output stage transistor, and the negative feedback circuit utilizes two PMOS (or PNP) negative feedback transistors having the same N:1 size ratio and connected as a common gate amplifier, whereby one of the two negative feedback transistors turns on to draw the desired sink current from the regulator output terminal only when the load current falls below N times the reference current (i.e., only the load current is drawn through the output stage transistor during high load current conditions).
    Type: Grant
    Filed: November 19, 2013
    Date of Patent: January 19, 2016
    Assignee: Tower Semiconductor Ltd.
    Inventors: Valentin Lerner, Danny Pollak
  • Publication number: 20150137780
    Abstract: A self-adjustable current source control circuit utilizes a replica output stage, a sink current source that generates a reference current, and a negative feedback circuit to generate a sink current between a linear regulator output terminal and ground only when a load circuit connected to the linear regulator is in a low power consuming state. The replica output stage includes an 1:N scaled replica of the linear regulator's NMOS (or NPN) output stage transistor, and the negative feedback circuit utilizes two PMOS (or PNP) negative feedback transistors having the same N:1 size ratio and connected as a common gate amplifier, whereby one of the two negative feedback transistors turns on to draw the desired sink current from the regulator output terminal only when the load current falls below N times the reference current (i.e., only the load current is drawn through the output stage transistor during high load current conditions).
    Type: Application
    Filed: November 19, 2013
    Publication date: May 21, 2015
    Applicant: Tower Semiconductor Ltd.
    Inventors: Valentin Lerner, Danny Pollak
  • Publication number: 20130293986
    Abstract: A current limiting circuit for a linear regulator includes an output stage transistor and a replica transistor, which have gates coupled to receive an output voltage from a linear amplifier and sources coupled to load circuitry. A drain of the output stage transistor is coupled to a VDD supply terminal, while a drain of the replica transistor is coupled to the VDD supply terminal through a first resistor. The output stage transistor and replica transistor are operated in saturation, such that proportional currents flow through these transistors. The voltage drop across the first resistor provides a first voltage, which is applied to a second amplifier. A reference voltage is also applied to the second amplifier. When the first voltage becomes less than the reference voltage, a feedback transistor is enabled to pull down the output voltage of the linear amplifier, thereby limiting the output current supplied to the load circuitry.
    Type: Application
    Filed: May 7, 2012
    Publication date: November 7, 2013
    Applicant: Tower Semiconductor Ltd.
    Inventors: Valentin Lerner, Dan Pollak