Abstract: A method for forming, on a conductive or semiconductor substrate, nanowires based on CuSCN, including the steps of: preparing an aqueous electrolytic solution from a Cu(II) salt having a concentration lower than 120 mM, a Cu(II) complexing agent from the aminocarboxylic acid family, and a thiocyanate salt, the solution having a pH ranging between 0.1 and 3; electrochemically depositing the aqueous electrolytic solution on the substrate.

Abstract: The present invention relates to a method for depositing nanoparticles (NPs) on a nanostructured metal oxide (NSMO) substrate, characterized in that it comprises the steps of: a) functionalizing the NSMO substrate with a bifunctional coupling agent carrying a first function, this first function being a phosphonic function that forms a bond with the NSMO, and a second function that is intended to form a bond with a nanoparticle; and b) grafting the nanoparticles via a bond with the second function of the coupling agent. The invention also relates to a stack comprising a nanostructured metal oxide substrate covered with nanoparticles by way of a bifunctional coupling agent carrying a first function, this first function being a phosphonic function and forming a bond with the NSMO, and a second function that is intended to form a bond with a nanoparticle. The invention is applicable to the field of microelectronics and especially to the production of electrodes and the production of photovoltaic panels.

Abstract: An apparatus is provided for injecting and mixing a treating agent into a fluid stream. The apparatus comprises at least one pipe having a treating agent flowing therethrough. A flow mixer having a planar middle section with two furcated sides is disposed along the length of the pipe. Each furcated side may include at least two branches, each of which may have a flattened outer edge. The pipe has holes that may inject the treating agent towards the planar middle section. Adjacent flow mixers are separated by a distance. As fluid flows into and past the flow mixers, the injected treating agent is mixed with the fluid stream and the mixing is enhanced in turbulent mixing zones in between the flow mixers.

Abstract: The present invention relates to a method for depositing nanoparticles (NPs) on a nanostructured metal oxide (NSMO) substrate, characterised in that it comprises the steps of: a) functionalising the NSMO substrate with a bifunctional coupling agent carrying a first function, this first function being a phosphonic function that forms a bond with the NSMO, and a second function that is intended to form a bond with a nanoparticle; and b) grafting the nanoparticles via a bond with the second function of the coupling agent. The invention also relates to a stack comprising a nanostructured metal oxide substrate covered with nanoparticles by way of a bifunctional coupling agent carrying a first function, this first function being a phosphonic function and forming a bond with the NSMO, and a second function that is intended to form a bond with a nanoparticle. The invention is applicable to the field of microelectronics and especially to the production of electrodes and the production of photovoltaic panels.

Abstract: A structure, method of manufacturing a structure, and methods of using a structure including a graphene sheet is disclosed. According to one aspect, the grapheme sheet is provided, on one of the faces of the structure, with a plurality of metal pins. The metal pins being separated from one another by a dielectric medium chosen from air and dielectric materials. The method including the steps of synthesizing, by vapor phase catalytic growth, the graphene sheet on a plurality of metal pins that are disposed on a membrane made from dielectric material or integrated in the membrane. The growth being catalyzed by the metal pins. According to some aspects, the membrane is removed from the structure. The structure may be used, for example, in the fields of micro- and nanoelectronics, micro- and nanoelectronic engineering, spintronics, photovoltaics, light emitting diode display, or the like.

Abstract: An apparatus is provided for injecting and mixing a treating agent into a fluid stream. The apparatus comprises at least one pipe having a treating agent flowing therethrough. A flow mixer having a planar middle section with two furcated sides is disposed along the length of the pipe. Each furcated side may include at least two branches, each of which may have a flattened outer edge. The pipe has holes that may inject the treating agent towards the planar middle section. Adjacent flow mixers are separated by a distance. As fluid flows into and past the flow mixers, the injected treating agent is mixed with the fluid stream and the mixing is enhanced in turbulent mixing zones in between the flow mixers.

Abstract: The invention relates to a method for forming, on a conductive plastic substrate, a 2D crystalline layer based on zinc oxide, possibly doped, characterized in that: the 2D layer is formed by electrochemical deposition; the electrochemical deposition is performed at a temperature ranging between 55° C. and 65° C.; the electrochemical deposition is performed in the presence of oxygen, by means of a solution including a zinc source at a concentration ranging between 2.5 mM and 7 mM; and a supporting electrolyte at a concentration ranging between 0.06 M et 0.4 M.

Abstract: A method for forming, on a conductive or semiconductor substrate, nanowires based on CuSCN, including the steps of: preparing an aqueous electrolytic solution from a Cu(II) salt having a concentration lower than 120 mM, a Cu(II) complexing agent from the aminocarboxylic acid family, and a thiocyanate salt, the solution having a pH ranging between 0.1 and 3; electrochemically depositing the aqueous electrolytic solution on the substrate.

Abstract: A process for fabricating a charge storage layer comprising metal particles of a memory cell, said layer consisting of an organic layer comprising, on the surface, said metal particles, said process comprising the following steps: (a) a step of grafting, onto a metallic, semiconductor or electrically insulating substrate, an organic layer comprising, on the surface, groups capable of complexing at least one metallic element in cationic form; (b) a step of bringing said layer into contact with a solution comprising said metallic element in cationic form, by means of which said metallic element is complexed by said abovementioned groups; and (c) a step of reducing said complexed metallic element to the metallic element in oxidation state 0, by means of which metal particles are obtained.

Abstract: A structure, method of manufacturing a structure, and methods of using a structure including a graphene sheet is disclosed. According to one aspect, the grapheme sheet is provided, on one of the faces of the structure, with a plurality of metal pins. The metal pins being separated from one another by a dielectric medium chosen from air and dielectric materials. The method including the steps of synthesizing, by vapor phase catalytic growth, the graphene sheet on a plurality of metal pins that are disposed on a membrane made from dielectric material or integrated in the membrane. The growth being catalysed by the metal pins. According to some aspects, the membrane is removed from the structure. The structure may be used, for example, in the fields of micro- and nanoelectronics, micro- and nanoelectronic engineering, spintronics, photovoltaics, light emitting diode display, or the like.

Abstract: A method for forming a nanotube/nanofiber growth catalyst on the sides of portions of a layer of a first material, comprising the steps of depositing a thin layer of a second material; opening this layer at given locations; depositing a very thin catalyst layer; depositing a layer of the first material over a thickness greater than that of the layer of the second material; eliminating by chem./mech. polishing the upper portion of the structure up to the high level of the layer of the second material; and eliminating the second material facing selected sides of the layer portions of the first material.

Abstract: A method for manufacturing an OLED and an electrode for an OLED, said electrode comprising a surface comprising a first dielectric nanostructuration and a second metal nanostructuration, on a substrate, wherein the following successive steps are carried out: a) a metal layer is deposited on a planar surface of a substrate; b) on the metal layer, a dielectric layer comprising said first dielectric nanostructuration which includes cavities which extend from the upper surface of the dielectric layer as far as the upper surface of the metal layer, is prepared; c) the cavities of the first dielectric nanostructuration are at least partially filled with a metal, whereby the second metal nanostructuration is obtained.

Abstract: A process for fabricating a charge storage layer comprising metal particles of a memory cell, said layer consisting of an organic layer comprising, on the surface, said metal particles, said process comprising the following steps: (a) a step of grafting, onto a metallic, semiconductor or electrically insulating substrate, an organic layer comprising, on the surface, groups capable of complexing at least one metallic element in cationic form; (b) a step of bringing said layer into contact with a solution comprising said metallic element in cationic form, by means of which said metallic element is complexed by said abovementioned groups; and (c) a step of reducing said complexed metallic element to the metallic element in oxidation state 0, by means of which metal particles are obtained.

Abstract: A method for forming a nanotube/nanofiber growth catalyst on the sides of portions of a layer of a first material, comprising the steps of depositing a thin layer of a second material; opening this layer at given locations; depositing a very thin catalyst layer; depositing a layer of the first material over a thickness greater than that of the layer of the second material; eliminating by chem./mech. polishing the upper portion of the structure up to the high level of the layer of the second material; and eliminating the second material facing selected sides of the layer portions of the first material.