Abstract: A semiconductor photoelectric generator comprising interconnected photocells with rectifying barriers, with isotype junctions in the base region and with current leads in the regions adjacent the rectifying barriers. Each photocell has a working surface, receiving incident radiation. The isotype junctions in the photocells are provided in direct proximity to the working surfaces of the photocells. At least one rectifying barrier in each photocell is provided at a distance from the working surface not exceeding the diffusion length of minority current carriers in the base region. The photocells can have the shape of microminiature parallelepipeds having at least two dimensions commensurate with the diffusion length of minority current carriers in the base region.