Abstract: A method is for designing an accelerator for digital signal processing including defining a software programmable fully pre-laid out macro by pre-laying out with a fixed topology a control logic of the DSP accelerator to obtain a fully pre-laid out control logic. The method further includes defining a hardware programmable partially pre-laid out macro by customizing a configurable layout area, thereby mapping a computational logic based on computation kernels related to an application of the DSP accelerator. A partially pre-laid out computational logic is therefore obtained.

Abstract: A memory base cell stores a bit of information implemented from a regular and compact structure made up of multiple identical and replicated base elements, on the “sea of gates” model, in which the base element of the structure is a cell able to be configured with a minimum width in relation to the particular technology used. Such a cell includes a bistable element with an input node operatively connected to a writing data line of the memory base cell, and an output node operatively connected to a reading data line of the memory base cell. The bistable element also has a first inverter and a second inverter arranged in a feedback configuration with respect to one another between the input node and the output node of the bistable element.

Abstract: A circuit base cell is for implementing an engineering change order (ECO) obtained on a semiconductor substrate. The base cell may include a PMOS transistor having a first active region obtained in a first diffusion P+ layer implanted in an N-well provided for on the substrate, and an NMOS transistor having a second active region obtained in a second diffusion N+ layer implanted on the substrate in such a manner as to be electrically insulated from the first diffusion P+ layer. The cell may be characterized in that the active regions and the diffusion layers are aligned therebetween with respect to a reference axis and they are extended symmetrically in the direction orthogonal to the axis. A first and a second width may be associated with the active regions and to the diffusion layers, respectively. The first and second width may be greater than a width of the cell, which is equivalent to a pitch of the standard minimum cell.

Abstract: A System-on-Chip (SoC) may include logic blocks connected to each other and to external connections, and a hardware debug infrastructure logic connected to the logic blocks and for performing functional changes to a design layout of the SoC. The hardware debug infrastructure logic may include software re-configurable modules based upon the logic blocks obtained from substituting a mask programmable ECO base cell configured as a functional logic cell for a logic cell in the design layout.

Abstract: A memory base cell stores a bit of information implemented from a regular and compact structure made up of multiple identical and replicated base elements, on the “sea of gates” Model, in which the base element of the structure is a cell able to be configured with a minimum width in relation to the particular technology used. Such a cell includes a bistable element with an input node operatively connected to a writing data line of the memory base cell, and an output node operatively connected to a reading data line of the memory base cell. The bistable element also has a first inverter and a second inverter arranged in a feedback configuration with respect to one another between the input node and the output node of the bistable element.

Abstract: A circuit base cell is for implementing an engineering change order (ECO) obtained on a semiconductor substrate. The base cell may include a PMOS transistor having a first active region obtained in a first diffusion P+ layer implanted in an N-well provided for on the substrate, and an NMOS transistor having a second active region obtained in a second diffusion N+ layer implanted on the substrate in such a manner as to be electrically insulated from the first diffusion P+ layer. The cell may be characterized in that the active regions and the diffusion layers are aligned therebetween with respect to a reference axis and they are extended symmetrically in the direction orthogonal to the axis. A first and a second width may be associated with the active regions and to the diffusion layers, respectively. The first and second width may be greater than a width of the cell, which is equivalent to a pitch of the standard minimum cell.

Abstract: A base cell for an Engineering Change Order (ECO) implementation having at least a first pair of CMOS transistors and a second pair of CMOS transistors, characterized in that said at least first pair of CMOS transistors have a common gate and said at least second pair of CMOS transistors have separate gates.

Abstract: A System-on-Chip (SoC) may include logic blocks connected to each other and to external connections, and a hardware debug infrastructure logic connected to the logic blocks and for performing functional changes to a design layout of the SoC. The hardware debug infrastructure logic may include software re-configurable modules based upon the logic blocks obtained from substituting a mask programmable ECO base cell configured as a functional logic cell for a logic cell in the design layout.

Abstract: A method is for designing an accelerator for digital signal processing including defining a software programmable fully pre-laid out macro by pre-laying out with a fixed topology a control logic of the DSP accelerator to obtain a fully pre-laid out control logic. The method further includes defining a hardware programmable partially pre-laid out macro by customizing a configurable layout area, thereby mapping a computational logic based on computation kernels related to an application of the DSP accelerator. A partially pre-laid out computational logic is therefore obtained.

Abstract: A base cell for an Engineering Change Order (ECO) implementation having at least a first pair of CMOS transistors and a second pair of CMOS transistors, characterized in that said at least first pair of CMOS transistors have a common gate and said at least second pair of CMOS transistors have separate gates.