Patents by Inventor Valeria Intini

Valeria Intini has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Reading method of a memory device with embedded error-correcting code and memory device with embedded error-correcting code
    Patent number: 8347201
    Abstract: A reading method for a memory device with error-correcting encoding envisages the steps of: carrying out a first reading of a plurality of memory locations (A0, A1, . . . , ALS-1) to generate a first recovered string (S1), and performing a first decoding attempt using the first recovered string (S1). When the first decoding attempt fails, the memory locations are read at least one second time, and at least one second recovered string (S2-SN) is generated. On the basis of a comparison between the first recovered string (S1) and the second recovered string (S2-SN), a modified string (SM) is generated, in which erasures (X) are located, and at least one second decoding attempt is carried out using the modified string (SM).
    Type: Grant
    Filed: March 14, 2011
    Date of Patent: January 1, 2013
    Assignee: Micron Technology, Inc.
    Inventors: Alessia Marelli, Valeria Intini, Roberto Ravasio, Rino Micheloni
  • READING METHOD OF A MEMORY DEVICE WITH EMBEDDED ERROR-CORRECTING CODE AND MEMORY DEVICE WITH EMBEDDED ERROR-CORRECTING CODE
    Publication number: 20110167318
    Abstract: A reading method for a memory device with error-correcting encoding envisages the steps of: carrying out a first reading of a plurality of memory locations (A0, A1, . . . , ALS-1) to generate a first recovered string (S1), and performing a first decoding attempt using the first recovered string (S1). When the first decoding attempt fails, the memory locations are read at least one second time, and at least one second recovered string (S2-SN) is generated, On the basis of a comparison between the first recovered string (S1) and the second recovered string (S2-SN), a modified string (SM) is generated, in which erasures (X) are located, and at least one second decoding attempt is carried out using the modified string (SM).
    Type: Application
    Filed: March 14, 2011
    Publication date: July 7, 2011
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Alessia Marelli, Valeria Intini, Roberto Ravasio, Rino Micheloni
  • Reading method of a memory device with embedded error-correcting code and memory device with embedded error-correcting code
    Patent number: 7908543
    Abstract: A reading method for a memory device with error-correcting encoding envisages the steps of: carrying out a first reading of a plurality of memory locations (A0, A1, . . . , ALS?1) to generate a first recovered string (S1), and performing a first decoding attempt using the first recovered string (S1). When the first decoding attempt fails, the memory locations are read at least one second time, and at least one second recovered string (S2-SN) is generated. On the basis of a comparison between the first recovered string (S1) and the second recovered string (S2-SN), a modified string (SM) is generated, in which erasures (X) are located, and at least one second decoding attempt is carried out using the modified string (SM).
    Type: Grant
    Filed: March 1, 2007
    Date of Patent: March 15, 2011
    Inventors: Alessia Marelli, Valeria Intini, Roberto Ravasio, Rino Micheloni
  • Reading method of a memory device with embedded error-correcting code and memory device with embedded error-correcting code
    Publication number: 20070234164
    Abstract: A reading method for a memory device with error-correcting encoding envisages the steps of: carrying out a first reading of a plurality of memory locations (A0, A1, . . . , ALS?1) to generate a first recovered string (S1), and performing a first decoding attempt using the first recovered string (S1). When the first decoding attempt fails, the memory locations are read at least one second time, and at least one second recovered string (S2-SN) is generated. On the basis of a comparison between the first recovered string (S1) and the second recovered string (S2-SN), a modified string (SM) is generated, in which erasures (X) are located, and at least one second decoding attempt is carried out using the modified string (SM).
    Type: Application
    Filed: March 1, 2007
    Publication date: October 4, 2007
    Applicant: STMicroelectronics S.r.l.
    Inventors: Alessia Marelli, Valeria Intini, Roberto Ravasio, Rino Micheloni