Abstract: A quantum dot light-emitting apparatus includes a substrate, with a first electrode layer located on the substrate. An emissive layer having a first set of quantum dots is electrically coupled with the first electrode layer, and a second electrode layer is also electrically coupled with the emissive layer. The second electrode layer is located opposite the first electrode layer, relative to the emissive layer. A first charge transport layer is placed between the emissive layer and the first electrode layer, and a second charge transport layer is placed between the emissive layer and the second electrode layer. At least one of the first charge transport layer and the second charge transport layer includes a second set of quantum dots.

Abstract: A light-emitting device is provided. The light-emitting device includes an anode, a cathode, and a combined charge transport and emissive layer (CCTEL) disposed between the anode and the cathode. The CCTEL includes a crosslinked charge transport material, a first plurality of quantum dots having a first energy gap, and a second plurality of quantum dots having a second energy gap wider than the first energy gap.

Abstract: A light-emitting structure comprises a substrate, a sub-pixel stack patterned over the substrate, an insulating material patterned to surround the emissive stack, and a bank patterned to surround the sub-pixel stack and the insulating material. The sub-pixel stack comprises an emissive stack between a first electrode layer and a second electrode layer.

Abstract: A quantum dot light-emitting apparatus includes a substrate, with a first electrode layer located on the substrate. An emissive layer having a first set of quantum dots is electrically coupled with the first electrode layer, and a second electrode layer is also electrically coupled with the emissive layer. The second electrode layer is located opposite the first electrode layer, relative to the emissive layer. A first charge transport layer is placed between the emissive layer and the first electrode layer, and a second charge transport layer is placed between the emissive layer and the second electrode layer. At least one of the first charge transport layer and the second charge transport layer includes a second set of quantum dots.

Abstract: A top-emitting pixel device is disclosed. The pixel device may include a reflective bottom electrode disposed over a substrate, a first charge transport layer disposed over the reflective bottom electrode, an emissive layer disposed over the first charge transport layer, and a second charge transport layer disposed over the emissive layer. Further, the pixel device may include a patterned transparent polymer electrode disposed over the second charge transport layer and extending laterally to cover an emissive area of the top-emitting pixel device, and a patterned auxiliary electrode disposed at least partially over the patterned transparent polymer electrode outside of the emissive area of the top-emitting pixel device to make direct electrical contact with the patterned transparent polymer electrode.

Abstract: A sub-pixel array device includes a plurality of optoelectronic devices disposed on a substrate, the plurality of optoelectronic devices including a light-emitting device and a light-converting device, and a bank structure that separates adjacent optoelectronic devices. Each optoelectronic device includes a first electrode, a second electrode, an active layer disposed between the electrodes and including a solution processable semiconductor, and a photo-crosslinkable material disposed between the first electrode and the second electrode. The photo-crosslinkable material may be incorporated within the active layer of each of the plurality of optoelectronic devices, so as to form a light-emitting device having a photo-crosslinkable emissive layer and a light-converting device having a photo-crosslinkable photo-active layer.

Abstract: A light-emitting device is provided. The light-emitting device includes an anode, a cathode, and a combined charge transport and emissive layer (CCTEL) disposed between the anode and the cathode. The CCTEL includes a crosslinked charge transport material, a first plurality of quantum dots having a first energy gap, and a second plurality of quantum dots having a second energy gap wider than the first energy gap.

Abstract: A light emitting element (semiconductor laser element) includes a multilayer structure in which a substrate, semiconductor layers to, an insulating layer, and a metal layer are stacked in order. The light emitting element includes a plurality of light emitting portions each of which emits a laser beam. The plurality of light emitting portions each include a ridge (ridge waveguide). The distance from a specific position in an active region in at least one of the light emitting portions to an inner surface of the metal layer is different from that in another of the light emitting portions.

Abstract: A light emitting device includes a sub-pixel region with a sub-pixel stack having a first electrode, second electrode, emissive layer between the first electrode and second electrode, a first charge transporting layer between the emissive layer and the first electrode, and a second charge transporting layer between the emissive layer and the second electrode. A bank in a bank region surrounds the sub-pixel stack. One of the first charge transporting or injecting layer and the second charge transporting or injecting layer is formed in the sub-pixel region and the bank region, and an electrical resistance of the first charge transporting layer and the second charge transporting layer in the bank region is higher than the sub-pixel region.

Abstract: [Object] Collection efficiency of a reflector that reflects a converted beam, which is converted from a pump beam by a phosphor, and projects the resultant as a projection beam is increased. [Solution] An optical member (4) of a light source unit (1) deflects a pump beam (PB) so that a first angle of incidence (?1) of a pump beam (PBX) relative to a surface of a phosphor (3) is larger than a second angle of incidence (?2) of the pump beam (PB), which is incident on the optical member (4), relative to the surface of the phosphor (3).

Abstract: A light source unit provides enhanced control of a colour shift of white light reflected by a retro-reflector. The light source unit includes a pump light source, which emits laser pump light, a phosphor, which converts the laser pump light into white light, a retro-reflector, which has an output aperture that allows emission of part of the white light, the retro-reflector reflecting another part of the white light back to the phosphor, and scattering particles, which are adjusted to increase a blue light ratio of the white light.

Abstract: A light emitting element (semiconductor laser element) includes a multilayer structure in which a substrate, semiconductor layers to, an insulating layer, and a metal layer are stacked in order. The light emitting element includes a plurality of light emitting portions each of which emits a laser beam. The plurality of light emitting portions each include a ridge (ridge waveguide). The distance from a specific position in an active region in at least one of the light emitting portions to an inner surface of the metal layer is different from that in another of the light emitting portions.

Abstract: A light source module includes: a convergent beam generating unit which generates, based on a pump beam emitted from a light source, a convergent pump beam having a beam size that decreases as the convergent pump beam propagates; a light guide body inside which the convergent pump beam, having been generated by the convergent beam generating unit, propagates; an extraction part which causes the convergent pump beam, having propagated inside the light guide body, to exit from the light guide body; and a wavelength conversion element which converts a wavelength of the convergent pump beam, being incident on the wavelength conversion element through the extraction part, and emits, through the light guide body, the convergent pump beam whose wavelength has been converted.

Abstract: [Object] Collection efficiency of a reflector that reflects a converted beam, which is converted from a pump beam by a phosphor, and projects the resultant as a projection beam is increased. [Solution] An optical member (4) of a light source unit (1) deflects a pump beam (PB) so that a first angle of incidence (?l) of a pump beam (PBX) relative to a surface of a phosphor (3) is larger than a second angle of incidence (a2) of the pump beam (PB), which is incident on the optical member (4), relative to the surface of the phosphor (3).

Abstract: [Object] To control a colour shift of white light reflected by a retro-reflector. [Solution] A light source unit (1) includes a pump light source (2), which emits laser pump light (11), a phosphor (3), which converts the laser pump light (11) into white light (12), a retro-reflector (4), which has an output aperture (5) that allows emission of part of the white light (12), the retro-reflector (4) reflecting another part of the white light (12) back to the phosphor (3), and scattering particles (7), which are adjusted to increase a blue light ratio of the white light (12).

Abstract: A light source module includes: a convergent beam generating unit which generates, based on a pump beam emitted from a light source, a convergent pump beam having a beam size that decreases as the convergent pump beam propagates; a light guide body inside which the convergent pump beam, having been generated by the convergent beam generating unit, propagates; an extraction part which causes the convergent pump beam, having propagated inside the light guide body, to exit from the light guide body; and a wavelength conversion element which converts a wavelength of the convergent pump beam, being incident on the wavelength conversion element through the extraction part, and emits, through the light guide body, the convergent pump beam whose wavelength has been converted.

Abstract: A laser device includes a light source that emits a source light having a first peak wavelength. A nonlinear optical component performs a frequency conversion process that converts the source light into output light having a second peak wavelength. A stabilization component minimizes a mismatch error constituting a difference between the first peak wavelength and a wavelength for which the frequency conversion process in the nonlinear optical component has a maximum value. The stabilization component may include a housing that is thermally conductive between the light source and the nonlinear optical component to minimize a temperature difference between the light source and the nonlinear optical component. The laser device may include a focusing optical component that focuses the source light to have a convergence half angle that is larger than a convergence half angle that gives maximum output power, thereby increasing an acceptable range of the mismatch error.

Abstract: A group III nitride based laser light emitting device includes an n-side group III nitride based semiconductor region, a p-side group III nitride based semiconductor region, and a group III nitride based active region between the p-side group III nitride based semiconductor region and n-side group III nitride based semiconductor region. The group III nitride based active region includes first and second quantum well layers and a barrier layer between the first and second quantum well layers, the respective compositions of the first and second quantum well layers comprising different respective amounts of indium. The first quantum well is closer to the n-side group III nitride based semiconductor region than the second quantum well, the second quantum well is closer to the p-side group III nitride based semiconductor region than the first quantum well, and the first quantum well has a larger band gap than the second quantum well.

Abstract: A group III nitride based laser light emitting device includes an n-side group III nitride based semiconductor region, a p-side group III nitride based semiconductor region, and a group III nitride based active region between the p-side group III nitride based semiconductor region and n-side group III nitride based semiconductor region. The group III nitride based active region includes first and second quantum well layers and a barrier layer between the first and second quantum well layers, the respective compositions of the first and second quantum well layers comprising different respective amounts of indium. The first quantum well is closer to the n-side group III nitride based semiconductor region than the second quantum well, the second quantum well is closer to the p-side group III nitride based semiconductor region than the first quantum well, and the first quantum well has a larger band gap than the second quantum well.

Abstract: A gas analyzer and related methods are for measuring a concentration of a component of a gas mixture. The gas analyzer includes a gas cell defining an overall volume for housing the gas mixture, a gas inlet and a gas outlet, a light source that emits a light beam into the gas cell, and a light detector that detects a portion of the light of the light beam that has propagated through the gas mixture, the concentration of the component of the gas mixture being determined based on the portion of the light beam detected by the light detector. The gas cell defines an optical volume for travel of the light beam within the gas cell, and the optical volume comprises at least a portion of the overall volume and is configured to suppress turbulent flow of the gas mixture within the optical volume to reduce optical noise generated by the gas mixture.