Patents by Inventor Valerie Marthe Girault

Valerie Marthe Girault has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Field effect transistor and method of making
    Patent number: 10381447
    Abstract: A Field Effect Transistor (FET) capable of operating at high frequencies and includes comb-shaped source and drain electrodes. The comb-shaped drain electrode includes a plurality of thin comb-shape drain electrode layers at corresponding levels of the FET, each comb-shaped drain electrode layer including a plurality of drain electrode fingers having substantially the same width as the comb-shaped drain electrodes of each other layer. The comb-shaped source electrode includes a plurality of comb-shape source electrode layers at the corresponding levels, each comb-shaped drain electrode layer including a plurality of drain electrode fingers having substantially the same width as the comb-shaped source electrodes of each other layer. In addition, the inter-level retraction of adjacent drain electrode layers is the same or substantially the same. Similarly, the inter-level retraction of adjacent source electrode layers is the same or substantially the same.
    Type: Grant
    Filed: December 13, 2017
    Date of Patent: August 13, 2019
    Assignee: NXP B.V.
    Inventors: Lukas Frederik Tiemeijer, Viet Thanh Dinh, Valerie Marthe Girault
  • FIELD EFFECT TRANSISTOR AND METHOD OF MAKING
    Publication number: 20190181234
    Abstract: A Field Effect Transistor (FET) capable of operating at high frequencies and includes comb-shaped source and drain electrodes. The comb-shaped drain electrode includes a plurality of thin comb-shape drain electrode layers at corresponding levels of the FET, each comb-shaped drain electrode layer including a plurality of drain electrode fingers having substantially the same width as the comb-shaped drain electrodes of each other layer. The comb-shaped source electrode includes a plurality of comb-shape source electrode layers at the corresponding levels, each comb-shaped drain electrode layer including a plurality of drain electrode fingers having substantially the same width as the comb-shaped source electrodes of each other layer. In addition, the inter-level retraction of adjacent drain electrode layers is the same or substantially the same. Similarly, the inter-level retraction of adjacent source electrode layers is the same or substantially the same.
    Type: Application
    Filed: December 13, 2017
    Publication date: June 13, 2019
    Inventors: Lukas Frederik Tiemeijer, Viet Thanh Dinh, Valerie Marthe Girault