Patents by Inventor Valerie Nguyen

Valerie Nguyen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8136401
    Abstract: The invention relates to a micromachined accelerometer using a movable seismic mass suspended in relation to the substrate by elastic connections only allowing translation in its own plane along a sensitive axis (Oy). The mass acts on at least one elongate resonator by means of a force amplification structure associated with this resonator. The amplification structure comprises a rigid lever arm, a first end of which is connected to the seismic mass by a connection having, in the plane of the mass, a high stiffness in the direction of the sensitive axis (Oy) and a low stiffness in the perpendicular direction, and a second end is connected to an anchor point on the substrate. The second end of the lever arm is a rigid head piece surrounding the anchor point and connected to this anchor point by a rotational connection about a center of rotation.
    Type: Grant
    Filed: September 17, 2007
    Date of Patent: March 20, 2012
    Assignee: Commissariat A l'Energie Atomique
    Inventors: Sébastien Hentz, Valérie Nguyen, Philippe Robert
  • Patent number: 7932118
    Abstract: A mechanical component production method of a MEMS/NEMS structure from a monocrystalline silicon substrate includes forming anchoring zones in one face of the substrate. A lower protective layer, non-silicon, obtained by epitaxy from the face of the substrate is formed on the face. A silicon layer obtained by epitaxy from the lower protective layer is formed on the lower protective layer. An upper protective layer is formed on the silicon layer. The upper protective, silicon and lower protective layers are etched according to a pattern defining the component, until the substrate is reached, providing access routes to the substrate. A protective layer is formed on the walls formed by the etching in the epitaxied silicon layer. The component is released by isotropic etching of the substrate from the access routes, wherein the isotropic etching does not attack the lower and upper protective layers and the protective layer of the walls.
    Type: Grant
    Filed: December 17, 2008
    Date of Patent: April 26, 2011
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Philippe Robert, Valérie Nguyen
  • Publication number: 20100000323
    Abstract: The invention relates to a micromachined accelerometer using a movable seismic mass suspended in relation to the substrate by elastic connections only allowing translation in its own plane along a sensitive axis (Oy). The mass acts on at least one elongate resonator by means of a force amplification structure associated with this resonator. The amplification structure comprises a rigid lever arm, a first end of which is connected to the seismic mass by a connection having, in the plane of the mass, a high stiffness in the direction of the sensitive axis (Oy) and a low stiffness in the perpendicular direction, and a second end is connected to an anchor point on the substrate. The second end of the lever arm is a rigid head piece surrounding the anchor point and connected to this anchor point by a rotational connection about a center of rotation.
    Type: Application
    Filed: September 17, 2007
    Publication date: January 7, 2010
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE
    Inventors: Sebastien Hentz, Valerie Nguyen, Phillippe Robert
  • Publication number: 20090170231
    Abstract: The invention concerns a method of producing at least one mechanical component of a MEMS or NEMS structure from a monocrystalline silicon substrate, comprising the steps of: forming anchoring zones in one face of the substrate to delimit the mechanical component, forming, on the face of the substrate, a lower protective layer made of material other than silicon and obtained by epitaxy from the face of the substrate, forming, on the lower protective layer, a silicon layer obtained by epitaxy from the lower protective layer, forming an upper protective layer on the silicon layer, etching the upper protective layer, the silicon layer and the lower protective layer, according to a pattern defining the mechanical component, until the substrate is reached and to provide access routes to the substrate, forming a protective layer on the walls formed by the etching of the pattern of the mechanical component in the epitaxied silicon layer, releasing the mechanical component by isotropic etching of the substrate from
    Type: Application
    Filed: December 17, 2008
    Publication date: July 2, 2009
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE
    Inventors: Philippe Robert, Valerie Nguyen