Patents by Inventor Valeriy K. Sukharev

Valeriy K. Sukharev has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for forming dielectric films
    Patent number: 6030460
    Abstract: Disclosed is a method and apparatus for facilitating the decomposition of organometallic compounds such as TEOS in chemical vapor deposition reactors in order to form deposition films. The method generally includes: (1) introducing an organometallic compound and ozone molecules to a chemical vapor deposition reactor; (2) directing ultraviolet radiation into the chemical vapor deposition reactor to increase the rate at which oxygen atoms are formed from the ozone molecules present in the chemical vapor deposition reactor; and (3) decomposing the organometallic compound to form a deposition layer. The organometallic compound decomposes at an accelerated rate due in part to an increased amount of hydroxyl radicals present in the chemical vapor deposition reactor.
    Type: Grant
    Filed: September 9, 1997
    Date of Patent: February 29, 2000
    Assignee: LSI Logic Corporation
    Inventor: Valeriy K. Sukharev
  • Method and apparatus for forming dielectric films
    Patent number: 5710079
    Abstract: Disclosed is a method and apparatus for facilitating the decomposition of organometallic compounds such as TEOS in chemical vapor deposition reactors in order to form deposition films. The method generally includes: (1) introducing an organometallic compound and ozone molecules to a chemical vapor deposition reactor; (2) directing ultraviolet radiation into the chemical vapor deposition reactor to increase the rate at which oxygen atoms are formed from the ozone molecules present in the chemical vapor deposition reactor; and (3) decomposing the organometallic compound to form a deposition layer. The organometallic compound decomposes at an accelerated rate due in part to an increased amount of hydroxyl radicals present in the chemical vapor deposition reactor.
    Type: Grant
    Filed: May 24, 1996
    Date of Patent: January 20, 1998
    Assignee: LSI Logic Corporation
    Inventor: Valeriy K. Sukharev