Abstract: The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula AlxGa1-xN (0<x?1), wherein the step of growing A3N structures using (a)-langasite (La3Ga5SiO14) substrates is applied for the purposes of reducing the density of defects and mechanical stresses in heterostructures.

Abstract: The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula AlxGa1-xN (0<x?1), wherein the step of growing A3N structures using (a)-langasite (La3Ga5SiO14) substrates is applied for the purposes of reducing the density of defects and mechanical stresses in heterostructures.

Abstract: The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula AlxGa1-xN (0<x?1), wherein the step of growing A3N structures using (a)-langasite (La3Ga5SiO14) substrates is applied for the purposes of reducing the density of defects and mechanical stresses in heterostructures.

Abstract: The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula AlxGa1-xN (0<x?1), wherein the step of growing A3N structures using (a)-langasite (La3Ga5SiO14) substrates is applied for the purposes of reducing the density of defects and mechanical stresses in heterostructures.

Abstract: The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula AlxGa1-xN(0<x?1), wherein the step of growing A3N structures using (a)-langasite (La3Ga5SiO14) substrates is applied for the purposes of reducing the density of defects and mechanical stresses in heterostructures.

Abstract: New Peltier semiconductor heat transfer systems are presented herein. In particular, Peltier heat transfer systems of Peltier semiconductor elements of highly unique shapes are arranged to bias the cooling side with respect to its size and consequently performance. In effect, a Peltier heat transfer system is created whereby the Peltier called side is greatly reduced in size and the Peltier hot side is greatly expanded in size. Such ‘high aspect ratio’ Peltier systems promote ‘focused’ cooling effect, which is particularly useful in conjunction with high-performance electronic devices having a small footprint. The entire cooling fact of the Peltier device is brought to the small space approximated by a point. Thus a ‘point’ heat source such as a semiconductor laser are high-performance light emitting diode is more effectively cooled by these systems.

Abstract: New Peltier semiconductor heat transfer systems are presented herein. In particular, Peltier heat transfer systems of Peltier semiconductor elements of highly unique shapes are arranged to bias the cooling side with respect to its size and consequently performance. In effect, a Peltier heat transfer system is created whereby the Peltier called side is greatly reduced in size and the Peltier hot side is greatly expanded in size. Such ‘high aspect ratio’ Peltier systems promote ‘focused’ cooling effect, which is particularly useful in conjunction with high-performance electronic devices having a small footprint. The entire cooling fact of the Peltier device is brought to the small space approximated by a point. Thus a ‘point’ heat source such as a semiconductor laser are high-performance light emitting diode is more effectively cooled by these systems.