Abstract: A breakdown-avalanche photon sensors array is shown, which is implemented in CMOS technology, wherein the breakdown-avalanche photon sensors array has single photon sensitivity, comprising: a semiconductor substrate; and an epitaxial layer, which is located above the semiconductor substrate; and a breakdown-avalanche photon sensor, which is located within the epitaxial layer, wherein the breakdown avalanche photon sensor comprises: a guard ring and a quenching element, which is electrically connected to the breakdown-avalanche photon sensor, wherein the quenching element is configured for quenching the breakdown-avalanche photon sensor after detection of a photon. Furthermore, a digital breakdown-avalanche photon sensor, a digital breakdown-avalanche photon sensors array and a digital photomultiplier imager are shown.

Abstract: A breakdown-avalanche photon sensors array (10) is shown, which is implemented in CMOS technology, wherein the breakdown-avalanche photon sensors array (10) has single photon sensitivity, comprising: a semiconductor substrate (11); and an epitaxial layer (12), which is located above the semiconductor substrate (11); and a breakdown-avalanche photon sensor (13), which is located within the epitaxial layer (12), wherein the breakdown avalanche photon sensor (13) comprises: a guard ring (3) and a quenching element (5), which is electrically connected to the breakdown-avalanche photon sensor (13), wherein the quenching element (5) is configured for quenching the breakdown-avalanche photon sensor (13) after detection of a photon. Furthermore, a digital breakdown-avalanche photon sensor (11), a digital breakdown-avalanche photon sensors array (20)and an digital photomultiplier imager (40) are shown.