Patents by Inventor Valery I. Tolstikhin

Valery I. Tolstikhin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7447439
    Abstract: An optical triplexer design is described in which external optical signals at a first wavelength range propagate through a laser source. The laser source provides optical signals having a second wavelength range. The triplexer features a photodetector for providing intensity feedback signals to the lasers source and a dense wavelength division multiplexer for demultiplexing the external optical.
    Type: Grant
    Filed: May 7, 2004
    Date of Patent: November 4, 2008
    Assignee: Enablence Inc.
    Inventors: Adrian O'Donnell, Fang Wu, Valery I. Tolstikhin
  • Patent number: 7095938
    Abstract: The invention discloses a method for monolithic integration of active devices within passive semiconductor waveguides and the application of this method for use in InP-based planar wavelength division multiplexing components of optical communication systems. The epitaxial device is grown in a single run and comprises a number of layers, such that the lower part of the structure acts as a single mode passive waveguide while the upper part of the structure contains a planar PIN diode. The PIN structure is present only in the active waveguide portion and absent in all the passive waveguide portions. The active and passive waveguide portions have substantially similar guiding properties with the exception of a mode tail above a top surface of the passive waveguide portion within the active waveguide portion.
    Type: Grant
    Filed: February 18, 2002
    Date of Patent: August 22, 2006
    Assignee: MetroPhotonics Inc.
    Inventor: Valery I. Tolstikhin
  • Publication number: 20040096175
    Abstract: The invention discloses a method for monolithic integration of active devices within passive semiconductor waveguides and the application of this method for use in InP-based planar wavelength division multiplexing components of optical communication systems. The epitaxial device is grown in a single run and comprises a number of layers, such that the lower part of the structure acts as a single mode passive waveguide while the upper part of the structure contains a planar PIN diode. The PIN structure is present only in the active waveguide portion and absent in all the passive waveguide portions. The active and passive waveguide portions have substantially similar guiding properties with the exception of a mode tail above a top surface of the passive waveguide portion within the active waveguide portion.
    Type: Application
    Filed: September 25, 2003
    Publication date: May 20, 2004
    Inventor: Valery I. Tolstikhin