Abstract: System on Chip (SoC) solutions integrating an RFIC with a PMIC using a transistor technology based on group III-nitrides (III-N) that is capable of achieving high Ft and also sufficiently high breakdown voltage (BV) to implement high voltage and/or high power circuits. In embodiments, the III-N transistor architecture is amenable to scaling to sustain a trajectory of performance improvements over many successive device generations. In embodiments, the III-N transistor architecture is amenable to monolithic integration with group IV transistor architectures, such as planar and non-planar silicon CMOS transistor technologies. Planar and non-planar HEMT embodiments having one or more of recessed gates, symmetrical source and drain, regrown source/drains are formed with a replacement gate technique permitting enhancement mode operation and good gate passivation.

Abstract: Embodiments of an embedded mm-wave radio integrated circuit into a substrate of a phased array module are disclosed. In some embodiments, the phased array module includes a first set of substrate layers made of a first material. The mm-wave radio integrated circuit may be embedded in the first set of substrate layers. A second set of substrate layers may be coupled to the first set of substrate layers. The second set of substrate layers may be made of a second material that has a lower electrical loss than the first material. The second set of substrate layers may include a plurality of antenna elements coupled through vias to the mm-wave radio integrated circuit.

Abstract: An electronic device and methods including a switch formed in a chip package are shown. An electronic device and methods including a switch formed in a polymer based dielectric are shown. Examples of switches shown include microelectromechanical system (MEMS) structures, such as cantilever switches and/or shunt switches.

Abstract: System on Chip (SoC) solutions integrating an RFIC with a PMIC using a transistor technology based on group III-nitrides (III-N) that is capable of achieving high Ft and also sufficiently high breakdown voltage (BV) to implement high voltage and/or high power circuits. In embodiments, the III-N transistor architecture is amenable to scaling to sustain a trajectory of performance improvements over many successive device generations. In embodiments, the III-N transistor architecture is amenable to monolithic integration with group IV transistor architectures, such as planar and non-planar silicon CMOS transistor technologies. Planar and non-planar HEMT embodiments having one or more of recessed gates, symmetrical source and drain, regrown source/drains are formed with a replacement gate technique permitting enhancement mode operation and good gate passivation.

Abstract: System on Chip (SoC) solutions integrating an RFIC with a PMIC using a transistor technology based on group III-nitrides (III-N) that is capable of achieving high Ft and also sufficiently high breakdown voltage (BV) to implement high voltage and/or high power circuits. In embodiments, the III-N transistor architecture is amenable to scaling to sustain a trajectory of performance improvements over many successive device generations. In embodiments, the III-N transistor architecture is amenable to monolithic integration with group IV transistor architectures, such as planar and non-planar silicon CMOS transistor technologies. Planar and non-planar HEMT embodiments having one or more of recessed gates, symmetrical source and drain, regrown source/drains are formed with a replacement gate technique permitting enhancement mode operation and good gate passivation.

Abstract: A method of manufacturing an accelerometer, including placing a magnet on a substrate, laminating a dielectric layer over the magnet, forming a conductive layer over the dielectric layer, the conductive layer including a mass and a conductive path overlying the magnet, removing a portion of the dielectric layer proximate the mass and conductive path such that the mass is movable in response to acceleration of the accelerometer, and forming a dielectric layer over the mass to form a space between the mass and the dielectric layer formed over the mass sufficiently clear such that the mass remains movable.

Abstract: An electronic device and methods including a switch formed in a chip package are shown. An electronic device and methods including a switch formed in a polymer based dielectric are shown. Examples of switches shown include microelectromechanical system (MEMS) structures, such as cantilever switches and/or shunt switches.

Abstract: Embodiments of an embedded mm-wave radio integrated circuit into a substrate of a phased array module are disclosed. In some embodiments, the phased array module includes a first set of substrate layers made of a first material. The mm-wave radio integrated circuit may be embedded in the first set of substrate layers. A second set of substrate layers may be coupled to the first set of substrate layers. The second set of substrate layers may be made of a second material that has a lower electrical loss than the first material. The second set of substrate layers may include a plurality of antenna elements coupled through vias to the mm-wave radio integrated circuit.

Abstract: Embodiments of an embedded mm-wave radio integrated circuit into a substrate of a phased array module are disclosed. In some embodiments, the phased array module includes a first set of substrate layers made of a first material. The mm-wave radio integrated circuit may be embedded in the first set of substrate layers. A second set of substrate layers may be coupled to the first set of substrate layers. The second set of substrate layers may be made of a second material that has a lower electrical loss than the first material. The second set of substrate layers may include a plurality of antenna elements coupled through vias to the mm-wave radio integrated circuit.

Abstract: An electronic device and methods including a switch formed in a chip package are shown. An electronic device and methods including a switch formed in a polymer based dielectric are shown. Examples of switches shown include microelectromechanical system (MEMS) structures, such as cantilever switches and/or shunt switches.

Abstract: A flexible electronic computing device is described. In one embodiment, a flexible display is formed on a flexible substrate. A plurality of electronic components are attached to the flexible substrate. A plurality of conductive signal lines are formed on the flexible substrate, the signal lines electrically coupling the electronic components to the flexible display.

Abstract: An accelerometer includes a mass, suspended by a beam, and associated conductive paths. Each conductive path is subjected to a magnetic field, such that, when a time varying signal is applied to the conductive paths, a characteristic resonant frequency is produced, and when the mass experiences an acceleration, a respective change in the resonant frequency is produced that may be interpreted as acceleration data. Embodiments include methods of manufacturing an accelerometer and systems and devices incorporating the accelerometer.

Abstract: An accelerometer includes a mass, suspended by a beam, and associated conductive paths. Each conductive path is subjected to a magnetic field, such that, when a time varying signal is applied to the conductive paths, a characteristic resonant frequency is produced, and when the mass experiences an acceleration, a respective change in the resonant frequency is produced that may be interpreted as acceleration data. Embodiments include methods of manufacturing an accelerometer and systems and devices incorporating the accelerometer.

Abstract: Systems and methods for detecting the presence of biomolecules in a sample using biosensors that incorporate resonators which have functionalized surfaces for reacting with target biomolecules. In one embodiment, a device includes a piezoelectric resonator having a functionalized surface configured to react with target molecules, thereby changing the mass and/or charge of the resonator which consequently changes the frequency response of the resonator. The resonator's frequency response after exposure to a sample is compared to a reference, such as the frequency response before exposure to the sample, a stored baseline frequency response or a control resonator's frequency response.

Abstract: An electronic device and methods including a switch formed in a chip package are shown. An electronic device and methods including a switch formed in a polymer based dielectric are shown. Examples of switches shown include microelectromechanical system (MEMS) structures, such as cantilever switches and/or shunt switches.

Abstract: A voltage regulator for one or more dies in a multi-stack integrated circuit includes an inductor located on a die, a voltage controller that is electrically coupled to the inductor and is also located on the die, and a capacitor that is electrically coupled to the inductor and the voltage controller and is also located on the die. The inductor defines an interior space and the voltage controller and the capacitor are located within the interior space of the inductor. The inductor can be a lateral inductor or a through layer via inductor. The multi-stack integrated circuit may have multiple dies. A voltage controller may be electrically coupled to each of the dies, although it may be located on only one of the dies. Alternatively, separate voltage controllers may be electrically coupled to each of the multiple dies and may be located on each of the respective dies.

Abstract: Embodiments of an embedded mm-wave radio integrated circuit into a substrate of a phased array module are disclosed. In some embodiments, the phased array module includes a first set of substrate layers made of a first material. The mm-wave radio integrated circuit may be embedded in the first set of substrate layers. A second set of substrate layers may be coupled to the first set of substrate layers. The second set of substrate layers may be made of a second material that has a lower electrical loss than the first material. The second set of substrate layers may include a plurality of antenna elements coupled through vias to the mm-wave radio integrated circuit.

Abstract: Systems and methods for detecting the presence of biomolecules in a sample using biosensors that incorporate resonators which have functionalized surfaces for reacting with target biomolecules. In one embodiment, a device includes a piezoelectric resonator having a functionalized surface configured to react with target molecules, thereby changing the mass and/or charge of the resonator which consequently changes the frequency response of the resonator. The resonator's frequency response after exposure to a sample is compared to a reference, such as the frequency response before exposure to the sample, a stored baseline frequency response or a control resonator's frequency response.

Abstract: Systems and methods for detecting the presence of biomolecules in a sample using biosensors that incorporate resonators which have functionalized surfaces for reacting with target biomolecules. In one embodiment, a device includes a piezoelectric resonator having a functionalized surface configured to react with target molecules, thereby changing the mass and/or charge of the resonator which consequently changes the frequency response of the resonator. The resonator's frequency response after exposure to a sample is compared to a reference, such as the frequency response before exposure to the sample, a stored baseline frequency response or a control resonator's frequency response.

Abstract: An accelerometer includes a mass, suspended by a beam, and associated conductive paths. Each conductive path is subjected to a magnetic field, such that, when a time varying signal is applied to the conductive paths, a characteristic resonant frequency is produced, and when the mass experiences an acceleration, a respective change in the resonant frequency is produced that may be interpreted as acceleration data. Embodiments include methods of manufacturing an accelerometer and systems and devices incorporating the accelerometer.