Abstract: In semiconductor integrated circuitry having metal layers and via layers sandwiched between adjacent said metal layers, a capacitor is formed from metal structures implemented in first to third metal layers. The metal structures comprise strips having widths parallel to the layers. The strips of the first layer form a first comb having a base strip and a plurality of finger strips extending from the base strip, the widths of the strips being in a lower range of widths. The strips of the second layer form a second comb having a base strip and a plurality of finger strips extending from the base strip, the widths of the finger strips being in the lower range of widths. The width of each base strip formed in the second layer is in an intermediate range of widths; and the strips formed in the third layer have widths in a higher range of widths.

Abstract: In semiconductor integrated circuitry having metal layers and via layers sandwiched between adjacent said metal layers, a capacitor is formed from metal structures implemented in first to third metal layers. The metal structures comprise strips having widths parallel to the layers. The strips of the first layer form a first comb having a base strip and a plurality of finger strips extending from the base strip, the widths of the strips being in a lower range of widths. The strips of the second layer form a second comb having a base strip and a plurality of finger strips extending from the base strip, the widths of the finger strips being in the lower range of widths. The width of each base strip formed in the second layer is in an intermediate range of widths; and the strips formed in the third layer have widths in a higher range of widths.