Patents by Inventor Van Allen Mieczkowski

Van Allen Mieczkowski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8877611
    Abstract: An apparatus that comprises a device on a substrate and a crack stop in the substrate. Methods of forming a device are also disclosed. The methods may include providing a device, such as a semiconductor device, on a substrate having a first thickness, reducing the thickness of the substrate to a second thickness, and providing a crack stop in the substrate. Reducing the thickness of the substrate may include mounting the substrate to a carrier substrate for support and then removing the carrier substrate. The crack stop may prevent a crack from reaching the device.
    Type: Grant
    Filed: December 14, 2012
    Date of Patent: November 4, 2014
    Assignee: Cree, Inc.
    Inventors: Van Allen Mieczkowski, Daniel James Namishia
  • Patent number: 8357996
    Abstract: An apparatus that comprises a device on a substrate and a crack stop in the substrate. Methods of forming a device are also disclosed. The methods may include providing a device, such as a semiconductor device, on a substrate having a first thickness, reducing the thickness of the substrate to a second thickness, and providing a crack stop in the substrate. Reducing the thickness of the substrate may include mounting the substrate to a carrier substrate for support and then removing the carrier substrate. The crack stop may prevent a crack from reaching the device.
    Type: Grant
    Filed: November 17, 2009
    Date of Patent: January 22, 2013
    Assignee: Cree, Inc.
    Inventors: Van Allen Mieczkowski, Daniel James Namishia
  • Publication number: 20110115058
    Abstract: An apparatus that comprises a device on a substrate and a crack stop in the substrate. Methods of forming a device are also disclosed. The methods may include providing a device, such as a semiconductor device, on a substrate having a first thickness, reducing the thickness of the substrate to a second thickness, and providing a crack stop in the substrate. Reducing the thickness of the substrate may include mounting the substrate to a carrier substrate for support and then removing the carrier substrate. The crack stop may prevent a crack from reaching the device.
    Type: Application
    Filed: November 17, 2009
    Publication date: May 19, 2011
    Inventors: Van Allen Mieczkowski, Daniel James Namishia
  • Patent number: 7473938
    Abstract: A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. The contact layer, the ohmic contact and the passivation layer are made of materials that transmit light generated in the active heterojunction.
    Type: Grant
    Filed: October 6, 2006
    Date of Patent: January 6, 2009
    Assignee: Cree, Inc.
    Inventors: John Adam Edmond, Brian Thibeault, David Beardsley Slater, Jr., Gerald H. Negley, Van Allen Mieczkowski
  • Publication number: 20070085104
    Abstract: A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. The contact layer, the ohmic contact and the passivation layer are made of materials that transmit light generated in the active heterojunction.
    Type: Application
    Filed: October 6, 2006
    Publication date: April 19, 2007
    Applicant: Cree, Inc.
    Inventors: John Edmond, Brian Thibeault, David Slater, Gerald Negley, Van Allen Mieczkowski
  • Patent number: 7125737
    Abstract: A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. A method of manufacturing a light emitting diode and an LED lamp incorporating the diode are also disclosed.
    Type: Grant
    Filed: November 8, 2004
    Date of Patent: October 24, 2006
    Assignee: Cree, Inc.
    Inventors: John Adam Edmond, Brian Thibeault, David Beardsley Slater, Jr., Gerald H. Negley, Van Allen Mieczkowski
  • Patent number: 6825501
    Abstract: A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity condition. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contract layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. A method of manufacturing a light emitting diode and an LED lamp incorporating the diode are also disclosed.
    Type: Grant
    Filed: May 14, 2002
    Date of Patent: November 30, 2004
    Assignee: Cree, Inc.
    Inventors: John Adam Edmond, Brian Thibeault, David Beardsley Slater, Jr., Gerald H. Negley, Van Allen Mieczkowski
  • Publication number: 20030025121
    Abstract: A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. A method of manufacturing a light emitting diode and an LED lamp incorporating the diode are also disclosed.
    Type: Application
    Filed: May 14, 2002
    Publication date: February 6, 2003
    Inventors: John Adam Edmond, Brian Thibeault, David Beardsley Slater, Gerald H. Negley, Van Allen Mieczkowski