Abstract: A multi-level metal interconnect structure in a semiconductor device includes a plurality of overlying metal layers separated by ILD layers and electrically connected by filled vias in the ILD layers. Each metal layer includes a relatively thick antireflective layer for improved electromigration resistance. Each metal layer also includes a metal lining layer and a metal interconnect layer overlying the metal lining layer. Enhanced electromigration resistance is obtained by forming the antireflective layer to a thickness of no less than the thickness of the metal lining layer. In a preferred embodiment of the invention, the antireflective layer has a thickness of about 1000 angstroms.

Abstract: The nasal implant of this invention is characterized by a composition of hard-grade silicone fashioned into a special shape. One variation in the composition material is to use soft silicone only for the tip in order to overcome the fear of some surgeons to use hard silicone in this particular area.A special and improved shape of the implant, in the form of a modified hourglass, provides a well rounded and larger tip portion thanb that of the prior art. The supra-tip of this improved implant shows a depression dorsally, is less wide than the rest of the implant and has a pronounced slope laterally. These features, particularly at the supra-tip region avoid the unnatural effects of the prior art devices. Moreover this implant has a variable thickness form upper end to tip -that is it starts thin, increases in thickness and then goes thinner again- whereas the prior art starts thin and continually increases throughout.