Patents by Inventor Van Luan NGUYEN

Van Luan NGUYEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240162337
    Abstract: A semiconductor device including a two-dimensional material is provided. The semiconductor device may include a two-dimensional material layer having semiconductor properties, a self-assembled monolayer in which self-assembled molecules are packed side-by-side, the self-assembled monolayer being arranged on the two-dimensional material layer, and an oxide layer arranged on the self-assembled monolayer.
    Type: Application
    Filed: November 15, 2023
    Publication date: May 16, 2024
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Van Luan NGUYEN, Hyeonjin SHIN, Minsu SEOL, Yunseong LEE
  • Patent number: 11961898
    Abstract: A method of patterning a 2D material layer is includes selectively forming a first material layer on a surface of a substrate to form a first region in which the first material layer covers the surface of the substrate and to further form a second region in which the surface of the substrate is exposed from the first material layer, the first material layer having a strong adhesive force with a 2D material. The method further includes forming a 2D material layer is formed in both the first region and the second region. The method further includes selectively removing the 2D material layer from the second region based on using a physical removal method, such that the 2D material layer remains in the first region.
    Type: Grant
    Filed: December 9, 2021
    Date of Patent: April 16, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Van Luan Nguyen, Minsu Seol, Junyoung Kwon, Hyeonjin Shin, Minseok Yoo, Yeonchoo Cho
  • Publication number: 20240034636
    Abstract: An amorphous boron nitride compound may include a boron nitride compound, where the boron nitride compound may be amorphous and may be doped with carbon or hydrogen. In the boron nitride compound, a total content of the carbon or the hydrogen may be in a range of about 0.1 at % to about 35 at % of a total atomic content.
    Type: Application
    Filed: July 27, 2023
    Publication date: February 1, 2024
    Applicants: Samsung Electronics Co., Ltd., FUNDACIO INSTITUT CATALA DE NANOCIENCIA I NANOTECNOLOGIA (ICN2)
    Inventors: Stephan ROCHE, Aleandro ANTIDORMI, Onurcan KAYA, Van Luan NGUYEN, Hyeonjin SHIN, Taejin CHOI, Jaewon KIM, Taehoon KIM
  • Publication number: 20220406911
    Abstract: Disclosed are an electronic device including a two-dimensional material, and a method of fabricating the electronic device. The electronic device may include a first metal layer including a transition metal, a second metal layer on the first metal layer and including gold (Au), and a two-dimensional material layer between the first metal layer and the second metal layer. The two-dimensional material layer may include a transition metal dichalcogenide (TMD). The two-dimensional material layer may be formed as a chalcogen element diffuses into the second metal layer and reacts with the transition metal of the first metal layer adjacent to the second metal layer.
    Type: Application
    Filed: December 8, 2021
    Publication date: December 22, 2022
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Minseok YOO, Minsu SEOL, Junyoung KWON, Kyung-Eun BYUN, Hyeonjin SHIN, Van Luan NGUYEN
  • Publication number: 20220238721
    Abstract: A semiconductor device according to an embodiment may include a substrate, an adhesive layer, and a semiconductor layer. The semiconductor layer includes a 2D material having a layered structure. The adhesive layer is interposed between the substrate and the semiconductor layer, and has adhesiveness to a 2D material.
    Type: Application
    Filed: October 20, 2021
    Publication date: July 28, 2022
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Van Luan NGUYEN, Minsu SEOL, Eunkyu LEE, Junyoung KWON, Hyeonjin SHIN, Minseok YOO
  • Publication number: 20220238692
    Abstract: A method of patterning a 2D material layer is includes selectively forming a first material layer on a surface of a substrate to form a first region in which the first material layer covers the surface of the substrate and to further form a second region in which the surface of the substrate is exposed from the first material layer, the first material layer having a strong adhesive force with a 2D material. The method further includes forming a 2D material layer is formed in both the first region and the second region. The method further includes selectively removing the 2D material layer from the second region based on using a physical removal method, such that the 2D material layer remains in the first region.
    Type: Application
    Filed: December 9, 2021
    Publication date: July 28, 2022
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Van Luan NGUYEN, Minsu SEOL, Junyoung KWON, Hyeonjin SHIN, Minseok YOO, Yeonchoo CHO
  • Publication number: 20210163296
    Abstract: A method of forming graphene includes: preparing a substrate in a reaction chamber; performing a first growth process of growing a plurality of graphene aggregates apart from each other on the substrate at a first growth rate by using a reaction gas including a carbon source; and performing a second growth process of forming a graphene layer by growing the plurality of graphene aggregates at a second growth rate slower than the first growth rate by using the reaction gas including the carbon source.
    Type: Application
    Filed: October 1, 2020
    Publication date: June 3, 2021
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Van Luan NGUYEN, Keunwook SHIN, Hyeonjin SHIN, Changhyun KIM, Changseok LEE, Yeonchoo CHO