Abstract: An assembly including a liquid thermal interface material for surface tension adhesion and thermal control used during electrical/thermal test of a 3D wafer and methods of use. The method includes temporarily attaching a thinned wafer to a carrier wafer by applying a non-adhesive material therebetween and pressing the thinned wafer and the blank silicon-based carrier wafer together.

Abstract: An assembly including a liquid thermal interface material for surface tension adhesion and thermal control used during electrical/thermal test of a 3D wafer and methods of use. The method includes temporarily attaching a thinned wafer to a carrier wafer by applying a non-adhesive material therebetween and pressing the thinned wafer and the blank silicon-based carrier wafer together.

Abstract: A solder ball contact and a method of making a solder ball contact includes: a first insulating layer with a via formed on an integrated circuit (IC) chip and a metal pad; an under bump metallurgy (UBM) structure disposed within the via and on a portion of the first insulating layer, surrounding the via; a second insulating layer formed on an upper surface of an outer portion of the UBM structure that is centered on the via; and a solder ball that fills the via and is disposed above an upper surface of an inner portion of the UBM structure that contacts the via, in which the UBM structure that underlies the solder ball is of a greater diameter than the solder ball.

Abstract: A solder ball contact and a method of making a solder ball contact includes: a first insulating layer with a via formed on an integrated circuit (IC) chip and a metal pad; an under bump metallurgy (UBM) structure disposed within the via and on a portion of the first insulating layer, surrounding the via; a second insulating layer formed on an upper surface of an outer portion of the UBM structure that is centered on the via; and a solder ball that fills the via and is disposed above an upper surface of an inner portion of the UBM structure that contacts the via, in which the UBM structure that underlies the solder ball is of a greater diameter than the solder ball.

Abstract: A solder ball contact and a method of making a solder ball contact includes: a first insulating layer with a via formed on an integrated circuit (IC) chip and a metal pad; an under bump metallurgy (UBM) structure disposed within the via and on a portion of the first insulating layer, surrounding the via; a second insulating layer formed on an upper surface of an outer portion of the UBM structure that is centered on the via; and a solder ball that fills the via and is disposed above an upper surface of an inner portion of the UBM structure that contacts the via, in which the UBM structure that underlies the solder ball is of a greater diameter than the solder ball.

Abstract: A solder ball contact and a method of making a solder ball contact includes: a first insulating layer with a via formed on an integrated circuit (IC) chip and a metal pad; an under bump metallurgy (UBM) structure disposed within the via and on a portion of the first insulating layer, surrounding the via; a second insulating layer formed on an upper surface of an outer portion of the UBM structure that is centered on the via; and a solder ball that fills the via and is disposed above an upper surface of an inner portion of the UBM structure that contacts the via, in which the UBM structure that underlies the solder ball is of a greater diameter than the solder ball.

Abstract: A process for the preparation of phosphonic acid compounds of the formula ##STR1## wherein R.sub.1 and R.sub.2 are individually selected from the group consisting of aryl of 6 to 14 carbon atoms, optionally unsaturated alkyl of 1 to 8 carbon atoms, aryloxy of 6 to 14 carbon atoms, optionally unsaturated alkoxy of 1 to 8 carbon atoms and aralkoxy and aralkyl of 7 to 18 carbon atoms, or R.sub.1 and R.sub.2 together with a phosphorus atom form a ring, Y is selected from the group consisting of ##STR2## and --COOR.sub.3, R.sub.3 is selected from the group consisting of optionally unsaturated alkyl of 1 to 8 carbon atoms and optionally substituted, and ##STR3## R.sub.4 and R.sub.5 are individually selected from the group consisting of hydrogen, optionally unsaturated alkyl of 1 to 8 carbon atoms and aryl of 6 to 14 carbon atoms and R.sub.