Abstract: The present invention is a semiconductor device having a defect blocking region. The semiconductor device includes a substrate, a defect source region, a semiconductor layer and a defect blocking region. The defect source region is on the substrate, wherein the defect source region is a metamorphic buffer layer or a buffer layer, the semiconductor layer over the defect source region, wherein a lattice constant of the semiconductor layer is different from a lattice constant of the substrate. The defect blocking region is disposed on the substrate and below the semiconductor layer, wherein the defect blocking region includes a superlattice structure, wherein at least one of two adjacent layers of the superlattice structure has strain relative to the semiconductor layer, or a lattice constant of the superlattice structure is close to or equal to the lattice constant of the semiconductor layer.

Abstract: A hinge module capable of fixing a first housing and a second at various opening angles and a foldable electronic device including the same are provided.

Abstract: A semiconductor laser diode includes a substrate; a lower epitaxial region located on the substrate, wherein the lower epitaxial region includes a lower DBR layer; an active region located on the lower epitaxial region; and an upper epitaxial region located on the substrate, wherein the upper epitaxial region includes a lower DBR layer; wherein the lower DBR layer includes a P-type lower DBR region and the upper DBR layer includes an N-type upper DBR region.

Abstract: Provided is a semiconductor laser diode, including a GaAs/In P substrate and a multi-layer structure on the GaAs/InP substrate. The multi-layer structure includes a lower epitaxial region, an active region and an upper epitaxial region. The active region comprises a first active layer, an epitaxial region and a second active layer, the epitaxial region is disposed between the first active layer and the second active layer, the first active layer comprises one or more quantum well structures or one or more quantum dot structures, and the second active layer comprises one or more quantum well structures or one or more quantum dot structures.

Abstract: A semiconductor laser epitaxial structure includes a horizontal cavity configured to generate an optical field distribution, a grating layer located within the optical field distribution, a first semiconductor optical amplifier disposed between a light-emitting surface of the semiconductor laser epitaxial structure and the horizontal cavity, and a first tunnel junction layer disposed between the horizontal cavity and the first semiconductor optical amplifier. The grating layer is configured to convert a horizontal light to a vertical light. The semiconductor laser epitaxial structure does not require alignment, the yield rate of manufacturing the semiconductor laser is increased, and the manufacturing cost and manufacturing processes can be reduced.

Abstract: Provided is a semiconductor epitaxial wafer, including a substrate, a first epitaxial structure, a first ohmic contact layer and a second epitaxial stack structure. It is characterized in that the ohmic contact layer includes a compound with low nitrogen content, and the ohmic contact layer does not induce significant stress during the crystal growth process. Accordingly, the second epitaxial stack structure formed on the ohmic contact layer can have good epitaxial quality, thereby providing a high-quality semiconductor epitaxial wafer for fabricating a GaAs integrated circuit or a InP integrated circuit. At the same time, the ohmic contact properties of ohmic contact layers are not affected, and the reactants generated during each dry etching process are reduced.

Abstract: A vertical cavity surface-emitting laser epitaxial structure having a current spreading layer is disclosed. The vertical cavity surface-emitting laser epitaxial structure includes a substrate, a first epitaxial region on the substrate, an active region on the first epitaxial region, and a current spreading layer disposed in the first epitaxial region. The current spreading layer includes an N-type dopant, and the N-type dopant is selected from a group consisting of Si, Se, and the combination thereof. The current spreading layer does not directly contact the active region.

Abstract: Provided is a vertical cavity surface emitting laser diode (VCSEL) with low compressive strain DBR layer, including a GaAs substrate, a lower DBR layer, a lower spacer layer, an active region, an upper spacer layer and an upper DBR layer. The lower or the upper DBR layer includes multiple low refractive index layers and multiple high refractive index layers. The lower DBR layer, the lower spacer layer, the upper spacer layer or the upper DBR layer contains AlxGa1-xAs1-yPy, where the lattice constant of AlxGa1-xAs1-yPy is greater than that of the GaAs substrate. This can moderately reduce excessive compressive strain due to lattice mismatch or avoid tensile strain during the epitaxial growth, thereby reducing the chance of deformation and bowing of the VCSEL epitaxial wafer or cracking during manufacturing. Additionally, the VCSEL epitaxial layer can be prevented from generating excessive compressive strain or tensile strain during the epitaxial growth.

Abstract: Smart fertilizers and method of using and manufacturing are provided that include nanocarbon solution mixed with nanocomposite hydrogels at predetermined percentage weight or volume ratio (% w/w or % v/v). The resulted smart fertilizers are characterized in biosensors for detecting electricity conductance (EC) and/or pH degree of the surrounding soil caused by the release of ATPase H+ from the plant roots and in bioactuators for chemically reacting with the surrounding hydron ions to release the nutrients once the biodetectors detect the stimuli conditions.

Abstract: A head cap with channel identification includes a head cap, channel identification module, a controlling module, and electrical stimulation modules. The head cap includes the channels therein, and the head cap includes brain regions corresponding to the brain areas of the human being. The electrical stimulation modules disposed in the channels, and the channel identification modules disposed around the peripheral of the channels. The controlling module is electrically coupled to the channel identification modules. When the electrical stimulation modules disposed in some of the channels, the channel identification modules around the peripheral of the channels and the electrical stimulation module are constituted a circuit conduction status or a short circuit status, then the channel identification module transmits a signal to the controlling module to determine the desired sites of the electrical stimulation module where is corresponding to one of the brain areas of the human being according to the signal.

Abstract: A method for manufacturing a wind turbine blade, includes the steps of: arranging an upper mould including a pre-casted fibre lay-up on a lower mould comprising a dry fibre lay-up and a mould core, applying vacuum to a space between the upper and lower moulds and the mould core, infusing at least the dry fibre lay-up and a connection region between the dry fibre lay-up and the pre-casted fibre lay-up with a resin, and curing the resin. By having the pre-casted fibre lay-up in the upper mould, the packing and positioning of dry composite materials on top of the mould core is avoided.

Abstract: Provided is a stepped conductivity arrangement between a carbon-based element and a down conductor of a wind turbine rotor blade, which stepped conductivity arrangement includes a transition interface arranged to electrically connect a first electrically conductive part and a second electrically conductive part, wherein the first electrically conductive part extends from the down conductor, the second electrically conductive part extends from the carbon-based element, and wherein the electrical conductivity of the transition interface decreases in the direction of the second electrically conductive part. The embodiments further describe a wind turbine rotor blade comprising such a stepped conductivity arrangement and a method of providing such a stepped conductivity arrangement.

Abstract: The patent provides the system and the method of evaluation the centroid range-bearing processing in high resolution coastal surveillance radars to solve the problem of assessing the quality of centroid processing. The provided system includes blocks: Input data block, parameter calculation block, evaluation and export result block; The provided method includes steps: Loading input data, calculating parameters, evaluating and exporting results. The system and method provided in this invention solve the issue of the quality assessment of the radar system according to the battle-technical specification at the target centroid level.

Abstract: Provided is a rotor blade of a wind turbine including a leading edge section with a leading edge and a trailing edge section with a trailing edge, wherein the leading edge and the trailing edge divide the surface of the rotor blade into a suction side and a pressure side. The rotor blade further includes a blade shell for defining the outer shape of the rotor blade and a heating mat for anti-icing and/or deicing purposes which is arranged upon the blade shell. In the outboard region of the rotor blade, the heating mat is substantially or completely covered by a protective shield made of an electrically insulating polymer material. Use of a protective shield made of electrically insulating polymer material for electrical insulation of a heating mat in particular, against lightning strikes is also provided.

Abstract: A measurement method for a vertical cavity surface emitting laser diode (VCSEL) and an epitaxial wafer test fixture are provided, especially the Fabry-Perot Etalon of the bottom-emitting VCSEL can be measured. When the Fabry-Perot Etalon of the bottom-emitting VCSEL is measured by a measurement apparatus, a light of the test light source of the measurement apparatus is incident from the substrate surface of the VCSEL epitaxial wafer such that the Fabry-Perot Etalon of the bottom-emitting VCSEL is acquired. Through the VCSEL epitaxial wafer test fixture, the bottom-emitting VCSEL can be directly measured by the existing measurement apparatus such that there is no need to change the optical design of the measurement apparatus, and it can prevent the VCSEL epitaxial wafer from being scratched or contaminated.

Abstract: Provided is a semiconductor epitaxial wafer, including a substrate, a first epitaxial structure, a first ohmic contact layer and a second epitaxial stack structure. It is characterized in that the ohmic contact layer includes a compound with low nitrogen content, and the ohmic contact layer does not induce significant stress during the crystal growth process. Accordingly, the second epitaxial stack structure formed on the ohmic contact layer can have good epitaxial quality, thereby providing a high-quality semiconductor epitaxial wafer for fabricating a GaAs integrated circuit or a InP integrated circuit. At the same time, the ohmic contact properties of ohmic contact layers are not affected, and the reactants generated during each dry etching process are reduced.

Abstract: The present invention is a system and method for improving extraction of analytes from a solution by disposing a plurality of polydimethylsiloxane(PDMS) particles in a thin layer on an inner wall of an extraction vial, by increasing a surface area and volume of particles disposed to extract analytes from the solution and thereby increasing extraction capacity and speed for gas chromatography-mass spectrometry (GC-MS) analysis.

Abstract: The present invention relates to an apparatus for collecting and treating wastewater (1) based on biodegradation-recombination-biodegradation process, comprising: a shell (1.1), the space inside the shell is divided into a first chamber (1.2) and a second chamber (1.3) by a divider wall (1.4), wherein: the first chamber (1.2) contains biological medium suitable for heterotrophic microorganisms growth; the second chamber (1.3) contains biological medium suitable for autotrophic microorganisms and heterotrophic microorganisms growth.

Abstract: A laser diode is provided, including at least a defect blocking layer deposited between the GaAs substrate and the active layer, so that the crystal defects of the GaAs substrate can be blocked or reduced from propagation to the active layer when the epitaxial layer is formed on the GaAs substrate. As such, the crystal quality of the active layer can be improved, thereby improving the reliability and optical property of the laser diode.

Abstract: A method for detecting pedestrians in a vicinity of a vehicle is disclosed. The method includes: receiving image data acquired using one or more cameras, the image data depicting at least a portion of the vehicle's surroundings and at least one human subject; determining image coordinates corresponding to one or more parts of a body of the at least one human subject that are detected in the image data; obtaining vehicle environment information for the vehicle, the vehicle environment information identifying a plurality of regions that are defined in an area surrounding the vehicle; determining that the at least one human subject is present within a first one of the plurality of regions based on the image coordinates corresponding to the one or more detected body parts; and generating a notification indicating the detected presence of the at least one human subject in the first region.