Patents by Inventor Van-Truong Dai
Van-Truong Dai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250055257Abstract: A vertical cavity surface emitting laser diode (VCSEL) includes a substrate, a lower Bragg reflector (DBR) layer, an active region, an upper Bragg reflector (DBR) layer, and a current confinement layer. The lower DBR layer is on the substrate. The active region is on the lower DBR layer on the active region. The current confinement layer is inside or outside the active region. When the current confinement layer comprises a compound containing phosphorus, such as AlAsP or AlGaAsP, and the phosphorus (P) content is within a specific range, the insulation rate of the current confinement layer will not be excessively fast to the point of being difficult to control. Additionally, the reproducibility of the aperture in the current confinement layer between batches of the VCSEL production is improved. Furthermore, the divergence angle of the VCSEL can be further reduced, thereby significantly enhancing the sensing capabilities of Lidar or 3D sensing.Type: ApplicationFiled: October 28, 2024Publication date: February 13, 2025Applicant: VISUAL PHOTONICS EPITAXY CO., LTD.Inventors: Van-Truong Dai, Van-Chien Nguyen, Yu-Chung Chin, Chao-Hsing Huang
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Publication number: 20240079510Abstract: The present invention is a semiconductor device having a defect blocking region. The semiconductor device includes a substrate, a defect source region, a semiconductor layer and a defect blocking region. The defect source region is on the substrate, wherein the defect source region is a metamorphic buffer layer or a buffer layer, the semiconductor layer over the defect source region, wherein a lattice constant of the semiconductor layer is different from a lattice constant of the substrate. The defect blocking region is disposed on the substrate and below the semiconductor layer, wherein the defect blocking region includes a superlattice structure, wherein at least one of two adjacent layers of the superlattice structure has strain relative to the semiconductor layer, or a lattice constant of the superlattice structure is close to or equal to the lattice constant of the semiconductor layer.Type: ApplicationFiled: May 5, 2023Publication date: March 7, 2024Applicant: VISUAL PHOTONICS EPITAXY CO., LTD.Inventors: Van-Truong DAI, Yu-Chung CHIN, Chao-Hsing HUANG
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Publication number: 20240030685Abstract: A semiconductor laser diode includes a substrate; a lower epitaxial region located on the substrate, wherein the lower epitaxial region includes a lower DBR layer; an active region located on the lower epitaxial region; and an upper epitaxial region located on the substrate, wherein the upper epitaxial region includes a lower DBR layer; wherein the lower DBR layer includes a P-type lower DBR region and the upper DBR layer includes an N-type upper DBR region.Type: ApplicationFiled: July 19, 2023Publication date: January 25, 2024Inventors: Van-Truong DAI, Yu-Chung CHIN, Chao-Hsing HUANG
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Patent number: 11862938Abstract: Provided is a semiconductor laser diode, including a GaAs/In P substrate and a multi-layer structure on the GaAs/InP substrate. The multi-layer structure includes a lower epitaxial region, an active region and an upper epitaxial region. The active region comprises a first active layer, an epitaxial region and a second active layer, the epitaxial region is disposed between the first active layer and the second active layer, the first active layer comprises one or more quantum well structures or one or more quantum dot structures, and the second active layer comprises one or more quantum well structures or one or more quantum dot structures.Type: GrantFiled: June 11, 2020Date of Patent: January 2, 2024Assignee: VISUAL PHOTONICS EPITAXY CO., LTD.Inventors: Chao-Hsing Huang, Yu-Chung Chin, Van-Truong Dai, Jhao-Hang He, Hung-Chi Hsiao
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Publication number: 20230396040Abstract: A semiconductor laser epitaxial structure includes a horizontal cavity configured to generate an optical field distribution, a grating layer located within the optical field distribution, a first semiconductor optical amplifier disposed between a light-emitting surface of the semiconductor laser epitaxial structure and the horizontal cavity, and a first tunnel junction layer disposed between the horizontal cavity and the first semiconductor optical amplifier. The grating layer is configured to convert a horizontal light to a vertical light. The semiconductor laser epitaxial structure does not require alignment, the yield rate of manufacturing the semiconductor laser is increased, and the manufacturing cost and manufacturing processes can be reduced.Type: ApplicationFiled: April 27, 2023Publication date: December 7, 2023Inventors: Van-Truong DAI, Yu-Chung CHIN, Chao-Hsing HUANG, Chien-hung PAN, Chun-huang WU
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Patent number: 11799011Abstract: Provided is a semiconductor epitaxial wafer, including a substrate, a first epitaxial structure, a first ohmic contact layer and a second epitaxial stack structure. It is characterized in that the ohmic contact layer includes a compound with low nitrogen content, and the ohmic contact layer does not induce significant stress during the crystal growth process. Accordingly, the second epitaxial stack structure formed on the ohmic contact layer can have good epitaxial quality, thereby providing a high-quality semiconductor epitaxial wafer for fabricating a GaAs integrated circuit or a InP integrated circuit. At the same time, the ohmic contact properties of ohmic contact layers are not affected, and the reactants generated during each dry etching process are reduced.Type: GrantFiled: April 7, 2022Date of Patent: October 24, 2023Assignee: VISUAL PHOTONICS EPITAXY CO., LTD.Inventors: Chao-Hsing Huang, Yu-Chung Chin, Van-Truong Dai
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Publication number: 20230307889Abstract: A vertical cavity surface-emitting laser epitaxial structure having a current spreading layer is disclosed. The vertical cavity surface-emitting laser epitaxial structure includes a substrate, a first epitaxial region on the substrate, an active region on the first epitaxial region, and a current spreading layer disposed in the first epitaxial region. The current spreading layer includes an N-type dopant, and the N-type dopant is selected from a group consisting of Si, Se, and the combination thereof. The current spreading layer does not directly contact the active region.Type: ApplicationFiled: March 22, 2023Publication date: September 28, 2023Inventors: Van-Truong DAI, Yu-Chung CHIN, Chao-Hsing HUANG, Jhao-Hang HE
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Patent number: 11721954Abstract: Provided is a vertical cavity surface emitting laser diode (VCSEL) with low compressive strain DBR layer, including a GaAs substrate, a lower DBR layer, a lower spacer layer, an active region, an upper spacer layer and an upper DBR layer. The lower or the upper DBR layer includes multiple low refractive index layers and multiple high refractive index layers. The lower DBR layer, the lower spacer layer, the upper spacer layer or the upper DBR layer contains AlxGa1-xAs1-yPy, where the lattice constant of AlxGa1-xAs1-yPy is greater than that of the GaAs substrate. This can moderately reduce excessive compressive strain due to lattice mismatch or avoid tensile strain during the epitaxial growth, thereby reducing the chance of deformation and bowing of the VCSEL epitaxial wafer or cracking during manufacturing. Additionally, the VCSEL epitaxial layer can be prevented from generating excessive compressive strain or tensile strain during the epitaxial growth.Type: GrantFiled: July 17, 2020Date of Patent: August 8, 2023Assignee: VISUAL PHOTONICS EPITAXY CO., LTD.Inventors: Chao-Hsing Huang, Yu-Chung Chin, Van-Truong Dai
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Patent number: 11482830Abstract: A measurement method for a vertical cavity surface emitting laser diode (VCSEL) and an epitaxial wafer test fixture are provided, especially the Fabry-Perot Etalon of the bottom-emitting VCSEL can be measured. When the Fabry-Perot Etalon of the bottom-emitting VCSEL is measured by a measurement apparatus, a light of the test light source of the measurement apparatus is incident from the substrate surface of the VCSEL epitaxial wafer such that the Fabry-Perot Etalon of the bottom-emitting VCSEL is acquired. Through the VCSEL epitaxial wafer test fixture, the bottom-emitting VCSEL can be directly measured by the existing measurement apparatus such that there is no need to change the optical design of the measurement apparatus, and it can prevent the VCSEL epitaxial wafer from being scratched or contaminated.Type: GrantFiled: September 8, 2020Date of Patent: October 25, 2022Assignee: VISUAL PHOTONICS EPITAXY CO., LTD.Inventors: Chao-Hsing Huang, Yu-Chung Chin, Van-Truong Dai
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Publication number: 20220328645Abstract: Provided is a semiconductor epitaxial wafer, including a substrate, a first epitaxial structure, a first ohmic contact layer and a second epitaxial stack structure. It is characterized in that the ohmic contact layer includes a compound with low nitrogen content, and the ohmic contact layer does not induce significant stress during the crystal growth process. Accordingly, the second epitaxial stack structure formed on the ohmic contact layer can have good epitaxial quality, thereby providing a high-quality semiconductor epitaxial wafer for fabricating a GaAs integrated circuit or a InP integrated circuit. At the same time, the ohmic contact properties of ohmic contact layers are not affected, and the reactants generated during each dry etching process are reduced.Type: ApplicationFiled: April 7, 2022Publication date: October 13, 2022Inventors: Chao-Hsing Huang, Yu-Chung Chin, Van-Truong Dai
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Patent number: 11158995Abstract: A laser diode is provided, including at least a defect blocking layer deposited between the GaAs substrate and the active layer, so that the crystal defects of the GaAs substrate can be blocked or reduced from propagation to the active layer when the epitaxial layer is formed on the GaAs substrate. As such, the crystal quality of the active layer can be improved, thereby improving the reliability and optical property of the laser diode.Type: GrantFiled: May 29, 2019Date of Patent: October 26, 2021Assignee: VISUAL PHOTONICS EPITAXY CO., LTD.Inventors: Yu-Chung Chin, Chao-Hsing Huang, Van-Truong Dai
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Publication number: 20210104872Abstract: Provided is a vertical cavity surface emitting laser diode (VCSEL). A tunnel junction with a high doping concentration is provided in the VCSEL. An n-type semiconductor layer of the tunnel junction has stress relative to the substrate, and is doped with at least one element such that the tunnel junction not only has a high doping concentration, but also the epitaxial layer can be oxidized and the oxidation rate is relatively stable during the oxidation process. Alternatively, the n-type semiconductor layer is doped with at least two elements. As a result, the oxidation process of the VCSEL can be stably performed, and the resistance of the tunnel junction with a high doping concentration is low. The tunnel junction is suitable to be arranged between two active layers of the VCSEL or between the p-type semiconductor and the n-type semiconductor layer of the VCSEL.Type: ApplicationFiled: October 1, 2020Publication date: April 8, 2021Inventors: Chao-Hsing Huang, Yu-Chung Chin, Van-Truong Dai
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Publication number: 20210091537Abstract: Provided is a high-power vertical cavity surface emitting laser diode (VCSEL), including a first epitaxial region, an active region and a second epitaxial region. One of the first epitaxial region and the second epitaxial region is an N-type epitaxial region, and the other of the first epitaxial region and the second epitaxial region includes a PN junction. The PN junction includes a P-type epitaxial layer, a tunnel junction and an N-type epitaxial layer. The tunnel junction is located between the P-type epitaxial layer and the N-type epitaxial layer, and the P-type epitaxial layer of the PN junction is closest to the active region.Type: ApplicationFiled: September 23, 2020Publication date: March 25, 2021Inventors: Chao-Hsing Huang, Yu-Chung Chin, Van-Truong Dai
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Publication number: 20210075185Abstract: A measurement method for a vertical cavity surface emitting laser diode (VCSEL) and an epitaxial wafer test fixture are provided, especially the Fabry-Perot Etalon of the bottom-emitting VCSEL can be measured. When the Fabry-Perot Etalon of the bottom-emitting VCSEL is measured by a measurement apparatus, a light of the test light source of the measurement apparatus is incident from the substrate surface of the VCSEL epitaxial wafer such that the Fabry-Perot Etalon of the bottom-emitting VCSEL is acquired. Through the VCSEL epitaxial wafer test fixture, the bottom-emitting VCSEL can be directly measured by the existing measurement apparatus such that there is no need to change the optical design of the measurement apparatus, and it can prevent the VCSEL epitaxial wafer from being scratched or contaminated.Type: ApplicationFiled: September 8, 2020Publication date: March 11, 2021Inventors: Chao-Hsing Huang, Yu-Chung Chin, Van-Truong Dai
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Publication number: 20210021104Abstract: Provided is a vertical cavity surface emitting laser diode (VCSEL) with low compressive strain DBR layer, including a GaAs substrate, a lower DBR layer, a lower spacer layer, an active region, an upper spacer layer and an upper DBR layer. The lower or the upper DBR layer includes multiple low refractive index layers and multiple high refractive index layers. The lower DBR layer, the lower spacer layer, the upper spacer layer or the upper DBR layer contains AlxGa1-xAs1-yPy, where the lattice constant of AlxGa1-xAs1-yPy is greater than that of the GaAs substrate. This can moderately reduce excessive compressive strain due to lattice mismatch or avoid tensile strain during the epitaxial growth, thereby reducing the chance of deformation and bowing of the VCSEL epitaxial wafer or cracking during manufacturing. Additionally, the VCSEL epitaxial layer can be prevented from generating excessive compressive strain or tensile strain during the epitaxial growth.Type: ApplicationFiled: July 17, 2020Publication date: January 21, 2021Inventors: Chao-Hsing Huang, Yu-Chung Chin, Van-Truong Dai
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Publication number: 20200403379Abstract: Provided is a vertical cavity surface emitting laser diode (VCSEL) with multiple current confinement layers. A tunnel junction is generally required between two active layers to enable current to flow from one to another active layer. However, the tunnel junction will cause the current to spread in one active layer to become serious. As a result, the current in another active layer is difficult to be confined to the required area. Therefore, a current confinement layer with carrier and optical confinement functions is provided between two active layers such that the carrier and optical confinement of the active layers above and below the current confinement layer can be improved, thereby improving the performance of VCSEL. Compared with the existing VCSEL, the VCSEL with multiple current confinement layers can significantly improve the optical output power, slope efficiency and power conversion efficiency (PCE) of the VCSEL.Type: ApplicationFiled: June 19, 2020Publication date: December 24, 2020Inventors: Chao-Hsing Huang, Yu-Chung Chin, Van-Truong Dai
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Publication number: 20200395737Abstract: Provided is a semiconductor laser diode. Although the materials used in the conventional technology can reduce the strain, the selections of materials are relatively limited and the carrier confinement ability is not good. To solve the above-mentioned problems, a phosphorus-containing semiconductor layer is provided in a laser diode. As such, it can effectively reduce the strain of the active region or the total strain of the laser diode, and improve the carrier confinement capability of the active region. Therefore, it can effectively reduce the total strain or significantly improve carrier confinement under appropriate conditions of the laser diode. In some cases, it has the aforesaid effects. The phosphorus-containing semiconductor layer is suitable for an active region with one or more active layers. Especially after the phosphorus-containing semiconductor layer is provided in the active region with multiple active layers, high temperature performance are significantly improved or enhanced.Type: ApplicationFiled: June 11, 2020Publication date: December 17, 2020Inventors: Chao-Hsing Huang, Yu-Chung Chin, Van-Truong Dai, Jhao-Hang He, Hung-Chi Hsiao
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Publication number: 20190372310Abstract: A laser diode is provided, including at least a defect blocking layer deposited between the GaAs substrate and the active layer, so that the crystal defects of the GaAs substrate can be blocked or reduced from propagation to the active layer when the epitaxial layer is formed on the GaAs substrate. As such, the crystal quality of the active layer can be improved, thereby improving the reliability and optical property of the laser diode.Type: ApplicationFiled: May 29, 2019Publication date: December 5, 2019Inventors: Yu-Chung Chin, Chao-Hsing Huang, Van-Truong Dai