Patents by Inventor Vance Ley

Vance Ley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Exponentially doped layers in inverted metamorphic multijunction solar cells
    Patent number: 7727795
    Abstract: A method of forming a multijunction solar cell including an upper subcell, a middle subcell, and a lower subcell, including providing first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a grading interlayer over the second subcell, the grading interlayer having a third band gap greater than the second band gap; and forming a third solar subcell over the grading interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mis-matched with respect to the second subcell, wherein at least one of the bases of a solar subcell has an exponentially doped profile.
    Type: Grant
    Filed: August 7, 2008
    Date of Patent: June 1, 2010
    Assignee: Encore Solar Power, Inc.
    Inventors: Mark A. Stan, Arthur Cornfeld, Vance Ley
  • Exponentially Doped Layers In Inverted Metamorphic Multijunction Solar Cells
    Publication number: 20090155952
    Abstract: A method of forming a multifunction solar cell including an upper subcell, a middle subcell, and a lower subcell, including providing first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a grading interlayer over the second subcell, the grading interlayer having a third band gap greater than the second band gap; and forming a third solar subcell over the grading interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell, wherein at least one of the bases of a solar subcell has an exponentially doped profile.
    Type: Application
    Filed: December 13, 2007
    Publication date: June 18, 2009
    Applicant: Emcore Corporation
    Inventors: Mark A. Stan, Arthur Cornfeld, Vance Ley
  • Exponentially Doped Layers In Inverted Metamorphic Multijunction Solar Cells
    Publication number: 20090155951
    Abstract: A method of forming a multijunction solar cell including an upper subcell, a middle subcell, and a lower subcell, including providing first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a grading interlayer over the second subcell, the grading interlayer having a third band gap greater than the second band gap; and forming a third solar subcell over the grading interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mis-matched with respect to the second subcell, wherein at least one of the bases of a solar subcell has an exponentially doped profile.
    Type: Application
    Filed: August 7, 2008
    Publication date: June 18, 2009
    Applicant: Emcore Corporation
    Inventors: Mark A. Stan, Arthur Cornfeld, Vance Ley