Abstract: Methods and compositions are provided for planarizing a substrate surface with reduced or minimal topographical defect formation during a polishing process for dielectric materials. In one aspect a method is provided for polishing a substrate containing two or more dielectric layers, such as silicon oxide, silicon nitride, silicon oxynitride, with at least one processing step using a fixed-abrasive polishing article as a polishing article. The processing steps may be used to remove all, substantially all, or a portion of the one or more dielectric layers, which may include removal of the topography, the bulk dielectric, or residual dielectric material of a dielectric layer in two or more steps.

Abstract: Methods and compositions are provided for planarizing a substrate surface with reduced or minimal topographical defect formation during a polishing process for dielectric materials. In one aspect a method is provided for polishing a substrate containing two or more dielectric layers, such as silicon oxide, silicon nitride, silicon oxynitride, with at least one processing step using a fixed-abrasive polishing article as a polishing article. The processing steps may be used to remove all, substantially all, or a portion of the one or more dielectric layers, which may include removal of the topography, the bulk dielectric, or residual dielectric material of a dielectric layer in two or more steps.

Abstract: A method includes combining a solid first material and a solid second material and melting at least a portion of the first material sufficient to coat the second material and any remaining first material. An approximately homogenous distribution of the second material can be formed throughout the liquid phase of the first material. The first material liquid phase can then be solidified to define a composite target blank exhibiting an approximately homogenous distribution of the solid second material in a matrix of the solidified first material. The first material can comprise Se and the second material can comprise Ge. The composite target blank can include at least about 50 vol % matrix. The first and second materials can be powdered metals. Accordingly, a physical vapor deposition target can include a matrix of a first material and an approximately homogenous distribution of particles of a second material throughout the first material matrix.

Abstract: A method includes combining a solid first material and a solid second material and melting at least a portion of the first material sufficient to coat the second material and any remaining first material. An approximately homogenous distribution of the second material can be formed throughout the liquid phase of the first material. The first material liquid phase can then be solidified to define a composite target blank exhibiting an approximately homogenous distribution of the solid second material in a matrix of the solidified first material. The first material can comprise Se and the second material can comprise Ge. The composite target blank can include at least about 50 vol % matrix. The first and second materials can be powdered metals. Accordingly, a physical vapor deposition target can include a matrix of a first material and an approximately homogenous distribution of particles of a second material throughout the first material matrix.