Abstract: A method of removing surface carbon contamination from polycrystalline silicon comprises providing a polycrystalline silicon feed stream having surface carbon contamination, subjecting the polycrystalline silicon to a high velocity fluid selected from gas, gas/liquid mixtures, gas/solid mixtures and gas/solid/liquid mixtures to form a product stream comprising polycrystalline silicon having surface carbon in an amount of less than 200 parts per billion by weight based on weight of the polycrystalline silicon product and/or a reduction in surface carbon contamination of at least 20%. A system for conducting the method comprises an enclosure, a conveyer for moving a polycrystalline silicon feed stream through the enclosure, at least one stream of a high velocity fluid passing through outlets in the enclosure and directed at the feed stream, an ionizing source in the enclosure or integrated with the at least one stream of high velocity fluid, and an exhaust system for the enclosure.

Abstract: The present application discloses new decorative articles. The decorative articles may have a base having a reflective upper surface. The decorative articles may include at least one an aesthetic item located at least proximal the reflective upper surface of the base. The decorative articles may include an affixing material disposed on the reflective upper surface of the base, wherein the affixing material fixes the aesthetic item in a predetermined orientation relative to the reflective upper surface.

Abstract: A method of making a eutectic alloy body by silicothermic reduction is provided. The method can include heating a mixture including silicon and a metal oxide comprising one or more metallic elements M and oxygen, forming a eutectic alloy melt from the mixture, and removing heat from the eutectic alloy melt, thereby forming the eutectic alloy body having a eutectic aggregation of a first phase comprising the silicon and a second phase being a silicide phase.

Abstract: Silicon eutectic alloy compositions and methods for making the same are disclosed. In one approach, a method may include using a glass carbon container to restrict contamination of the eutectic alloy melt. In an alternative approach, a method may include using a container having aluminum. The aluminum in the container may provide aluminum that is incorporated into the silicon eutectic alloy. Silicon eutectic bodies made by such methods are also disclosed.

Abstract: An industrial component comprising a Si eutectic alloy comprises a body having a wear surface, where both the body and the wear surface comprise a eutectic alloy including silicon, one or more metallic elements M, and a eutectic aggregation of a first phase comprising the silicon and a second phase of formula MSi2, where the second phase is a disilicide phase. The wear surface comprises a resistance to erosive wear sufficient to limit transfer of, when an abrasive product is passing thereacross, at least one of the one or more more metallic elements therefrom to the abrasive product, such that the abrasive product comprises an increase in contamination level of 200 parts per billion (ppb) or less of the at least one of the one or more metallic elements M after the passage. The body may also comprise a fracture toughness of at least about 3.2 MPa·m1/2.

Abstract: To carry out a rotational casting method of preparing a silicon eutectic alloy composition, silicon and one or more metallic elements M are melted together to form a eutectic alloy melt comprising the silicon and the one or more metallic elements M. A mold containing the eutectic alloy melt is rotated about a longitudinal axis thereof at a speed sufficient to form a rotating volume of the eutectic alloy melt in contact with an inner surface of the mold. Heat is directionally removed from the rotating volume of the eutectic alloy melt to directionally solidify the eutectic alloy melt, and a eutectic alloy composition, which includes the silicon, the one or more metallic elements M, and a eutectic aggregation of a first phase comprising the silicon and a second phase of formula MSi2, where the second phase is a disilicide phase, is formed.

Abstract: The present invention provides a low-pressure very high frequency pulsed plasma reactor system for synthesis of nanoparticles. The system includes a chamber configured to receive at least one substrate and capable of being evacuated to a selected pressure. The system also includes a plasma source for generating a plasma from at least one precursor gas and a very high frequency radio frequency power source for providing continuous or pulsed radio frequency power to the plasma at a selected frequency. The frequency is selected based on a coupling efficiency between the pulsed radio frequency power and the plasma. Parameters of the VHF discharge and gas precursors are selected based on nanoparticle properties. The nanoparticle average size and particle size distribution are manipulated by controlling the residence time of the glow discharge (pulsing plasma) relative to the gas molecular residence time through the discharge and the mass flow rates of the nanoparticle precursor gas (or gases).

Abstract: The present invention provides a method of forming a flexible dichroic optical filter. The method comprises depositing a plurality of pairs of layers adjacent a substrate. Each of the plurality of pairs of layers includes a first layer formed of a silicon-and-carbon containing material having a first index of refraction and a second layer formed of a silicon-and-carbon containing material having a second index of refraction that is different than the first index of refraction.

Abstract: The present invention provides a method of forming a flexible dichroic optical filter. The method comprises depositing a plurality of pairs of layers adjacent a substrate. Each of the plurality of pairs of layers includes a first layer formed of a silicon-and-carbon containing material having a first index of refraction and a second layer formed of a silicon-and-carbon containing material having a second index of refraction that is different than the first index of refraction.

Abstract: The present invention provides method and process for forming a barrier layer on a flexible substrate. The continuous roll-to-roll method includes providing a substrate to a processing chamber using at least one roller configured to guide the substrate through the processing chamber. The process includes depositing a barrier layer adjacent the substrate by exposing at least one portion of the substrate that is within the processing chamber to plasma comprising a silicon-and-carbon containing precursor gas. The present invention is further directed to a coated flexible substrates comprising a barrier layer based on the structural unit SiC:H. The barrier layer possesses high density and low porosity. Still further, the barrier layer exhibits low water vapor transmission rate (WVTR) in the range of 10?2-10?3 g.m?2d?1 and is appropriate for very low permeability applications.

Abstract: A method and process for forming a barrier layer on a flexible substrate are provided. A continuous roll-to-roll method includes providing a substrate to a processing chamber using at least one roller configured to guide the substrate through the processing chamber. The process includes depositing a barrier layer adjacent the substrate by exposing at least one portion of the substrate that is within the processing chamber to plasma comprising a silicon-and-carbon containing precursor gas. Also provided is a coated flexible substrate comprising a barrier layer based on the structural unit SiC:H, or SiOC:H, or SiOCN:H. The barrier layer possesses high density and low porosity. The barrier layer exhibits low water vapor transmission rate (WVTR) in the range of 10?2-10?4 g·m?2d?1 and is appropriate for very low permeability applications.

Abstract: A sealed, metal oxide, electrodeless discharge lamp having a high emission ntensity in the visible 400-700 nm range. Within the sealed container assembly of the lamp there is a source of metal atoms capable of forming a volatile oxide and a source of an oxygen containing gas. The lamp produces a plasma and volatilizes the metal into the plasma. Preferably the lamp is at a low pressure of about 20-40 torr and the metals are molybdenum or tungsten. Power is applied by inductively coupled electromagnetic radiation. A regenerative agent such as a halogen is added for recycling any deposited metal into the gas phase and to form a volatile compound with the source of metal atoms. The agent lowers the temperatures needed to volatilize the metal into the plasma. The lamp is operated by first providing energy at a low level to initiate the plasma and then supplying the metal atoms into the plasma.