Abstract: A semiconductor device is provided that includes a leadframe, a die, and a clip. The leadframe has a flag and a power pad. The die is coupled to the flag. The clip comprises a die retaining section and a pad section. The die is coupled to the die retaining section, and the pad section extends from the die retaining section. The pad section is coupled to the power pad.

Abstract: A semiconductor device is provided that includes a leadframe, a die, and a clip. The leadframe has a flag and a power pad. The die is coupled to the flag. The clip comprises a die retaining section and a pad section. The die is coupled to the die retaining section, and the pad section extends from the die retaining section. The pad section is coupled to the power pad. Methods for forming the semiconductor device are provided as well.

Abstract: Semiconductor packages (100) that prevent the leaching of gold from back metal layers (118) into the solder (164) during the die attachment process and methods for fabricating the same are provided. A method in accordance with the invention comprises providing a semiconductor wafer stack (110) including a plurality of metal pads (112). An adhesion/plating layer (115) is formed on a surface (119) of a substrate (116). A layer of gold (118) is plated on a surface of the adhesion/plating layer (115). The layer of gold is etched in a street area (124) using standard photolithography techniques to expose edge portions (128) of the layer of gold (118) and the adhesion/plating layer (115). A layer of barrier metal (130) is deposited to form an edge seal (129) about the exposed edges (128) of the layer of gold (118) the adhesion/plating layer (115).