Patents by Inventor Vasily A Syngaevskiy

Vasily A Syngaevskiy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10511291
    Abstract: A control system (100, 200) and method (300) are provided where a first voltage domain circuit (111) and a power switch (121) operate in a first voltage domain and where a second voltage domain circuit (109) operates in a second voltage domain, where the second voltage domain circuit includes a gate driver circuit (202) for providing a control terminal driving signal (PWM1) to drive the power switch, and also includes a watchdog communication circuit (207) for scheduling watchdog communications between the first and second voltage domain circuits to be temporally separated from noise-inducing signal transitions in the control terminal driving signal.
    Type: Grant
    Filed: December 18, 2018
    Date of Patent: December 17, 2019
    Assignee: NXP USA, Inc.
    Inventors: Ibrahim S. Kandah, Fred T. Brauchler, Kim R. Gauen, David D. Putti, Vasily A. Syngaevskiy
  • Publication number: 20130321966
    Abstract: An overcurrent protection device comprises a maximum-allowed-current unit and a power switch. The maximum-allowed-current unit determines a maximum allowed current in real-time. The maximum allowed current is determined at least partially on an instantaneous level of a load voltage. The load voltage is a voltage across a load to be powered. The power switch is connectable with a switch input to a voltage supply and with a switch output to the load, for providing power to said load. The power switch has a conductive state and a nonconductive state, and is arranged to assume the nonconductive state in response to an indication that a current through the power switch is exceeding the maximum allowed current. A method of operating a power switch is also described.
    Type: Application
    Filed: February 18, 2011
    Publication date: December 5, 2013
    Applicant: Freescale Semiconductor
    Inventors: Vasily A Syngaevskiy, Laurent Guillot, Philippe Rosado, Denis Sergeevich Shuvalov, Alexander Petrovich Soldatov