Patents by Inventor Vassil Antonov
Vassil Antonov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130307120Abstract: Methods for forming ruthenium films and semiconductor devices such as capacitors that include the films are provided.Type: ApplicationFiled: July 25, 2013Publication date: November 21, 2013Applicant: Micron Technology, Inc.Inventors: Vishwanath Bhat, Dan Gealy, Vassil Antonov
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Capacitors including a rutile titanium dioxide material and semiconductor devices incorporating same
Patent number: 8564095Abstract: Methods of forming a capacitor including forming at least one aperture in a support material, forming a titanium nitride material within the at least one aperture, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The support material may then be removed and the titanium nitride material may be oxidized to form a titanium dioxide material. A second conductive material may then be formed over an outer surface of the titanium dioxide material. Capacitors, semiconductor devices and methods of forming a semiconductor device including the capacitors are also disclosed.Type: GrantFiled: February 7, 2011Date of Patent: October 22, 2013Assignee: Micron Technology, Inc.Inventors: Tsai-Yu Huang, Vishwanath Bhat, Vassil Antonov, Chun-I Hsieh, Chris Carlson -
METHODS OF FORMING CAPACITORS AND SEMICONDUCTOR DEVICES INCLUDING A RUTILE TITANIUM DIOXIDE MATERIAL
Publication number: 20130260529Abstract: Methods of forming a capacitor including forming at least one aperture in a support material, forming a titanium nitride material within the at least one aperture, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The support material may then be removed and the titanium nitride material may be oxidized to form a titanium dioxide material. A second conductive material may then be formed over an outer surface of the titanium dioxide material.Type: ApplicationFiled: May 28, 2013Publication date: October 3, 2013Applicant: MICRON TECHNOLOGY, INC.Inventors: Tsai-Yu Huang, Vishwanath Bhat, Vassil Antonov, Chun-I Hsieh, Chris Carlson -
Patent number: 8528175Abstract: Some embodiments include methods of forming capacitors. A metal oxide mixture may be formed over a first capacitor electrode. The metal oxide mixture may have a continuous concentration gradient of a second component relative to a first component. The continuous concentration gradient may correspond to a decreasing concentration of the second component as a distance from the first capacitor electrode increases. The first component may be selected from the group consisting of zirconium oxide, hafnium oxide and mixtures thereof; and the second component may be selected from the group consisting of niobium oxide, titanium oxide, strontium oxide and mixtures thereof. A second capacitor electrode may be formed over the first capacitor electrode. Some embodiments include capacitors that contain at least one metal oxide mixture having a continuous concentration gradient of the above-described second component relative to the above-described first component.Type: GrantFiled: December 29, 2011Date of Patent: September 10, 2013Assignee: Micron Technology, Inc.Inventors: Vassil Antonov, Vishwanath Bhat, Chris M. Carlson
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Patent number: 8518486Abstract: Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.Type: GrantFiled: May 12, 2010Date of Patent: August 27, 2013Assignee: Micron Technology, Inc.Inventors: Nik Mirin, Tsai-Yu Huang, Vishwanath Bhat, Chris Carlson, Vassil Antonov
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Patent number: 8513807Abstract: Methods for forming ruthenium films and semiconductor devices such as capacitors that include the films are provided.Type: GrantFiled: February 28, 2012Date of Patent: August 20, 2013Assignee: Micron Technology, Inc.Inventors: Vishwanath Bhat, Dan Gealy, Vassil Antonov
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Publication number: 20130182367Abstract: A method for forming a stacking structure, including forming a ruthenium oxide layer over a substrate; forming a praseodymium oxide layer over the ruthenium oxide layer; and forming a titanium oxide layer over the praseodymium oxide layer; wherein the titanium oxide layer has a rutile phase with the existence of the praseodymium oxide layer underneath. The oxide layers are deposited by a plurality of atomic layer deposition cycles using ruthenium precursor, praseodymium precursor, titanium precursor, and ozone.Type: ApplicationFiled: January 12, 2012Publication date: July 18, 2013Applicant: Nan Ya Technology CorporationInventors: Chun I HSIEH, Vishwanath Bhat, Jennifer Sigman, Vassil Antonov, Wei Hui Hsu
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Patent number: 8399952Abstract: Strontium ruthenium oxide provides an effective interface between a ruthenium conductor and a strontium titanium oxide dielectric. Formation of the strontium ruthenium oxide includes the use of atomic layer deposition to form strontium oxide and subsequent annealing of the strontium oxide to form the strontium ruthenium oxide. A first atomic layer deposition of strontium oxide is preformed using water as an oxygen source, followed by a subsequent atomic layer deposition of strontium oxide using ozone as an oxygen source.Type: GrantFiled: May 9, 2011Date of Patent: March 19, 2013Assignee: Micron Technology, Inc.Inventors: Bhaskar Srinivasan, Vassil Antonov, John Smythe
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Publication number: 20120267757Abstract: A method for using a metal bilayer is disclosed. First, a bottom electrode is provided. Second, a dielectric layer which is disposed on and is in direct contact with the lower electrode is provided. Then, a metal bilayer which serves as a top electrode in a capacitor is provided. The metal bilayer is disposed on and is in direct contact with the dielectric layer. The metal bilayer consists of a noble metal in direct contact with the dielectric layer and a metal nitride in direct contact with the noble metal.Type: ApplicationFiled: April 20, 2011Publication date: October 25, 2012Inventors: Vassil Antonov, Vishwanath Bhat, Chris Carlson
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Publication number: 20120241865Abstract: One aspect of the present invention provides an integrated circuit structure including a semiconductor substrate, a bottom dielectric layer positioned on the substrate, at least two capping dielectric layers positioned on the bottom dielectric layer, and a metal layer positioned on the at least two capping dielectric layers, wherein one of the two capping dielectric layers is an aluminum oxide layer, and the other is a silicon oxide layer. Another aspect of the present invention provides an integrated circuit structure including a bottom electrode, a bottom dielectric layer positioned on the bottom electrode, at least two capping dielectric layers positioned on the bottom dielectric layer, and a top electrode positioned on the at least two capping dielectric layers, wherein one of the two capping dielectric layers is an aluminum oxide layer, and the other is a silicon oxide layer.Type: ApplicationFiled: March 21, 2011Publication date: September 27, 2012Applicant: NANYA TECHNOLOGY CORPORATIONInventors: Vassil Antonov, Vishwanath Bhat, Noel Rocklein, Chris Carlson
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Publication number: 20120225268Abstract: Methods of forming an insulative element are described, including forming a first metal oxide material having a first dielectric constant, forming a second metal oxide material having a second dielectric constant different from the first, and heating at least portions of the structure to crystallize at least a portion of at least one of the first dielectric material and the second dielectric material. Methods of forming a capacitor are described, including forming a first electrode, forming a dielectric material with a first oxide and a second oxide over the first electrode, and forming a second electrode over the dielectric material. Structures including dielectric materials are also described.Type: ApplicationFiled: March 2, 2011Publication date: September 6, 2012Applicant: MICRON TECHNOLOGY, INC.Inventors: Vassil Antonov, Jennifer K. Sigman, Vishwanath Bhat, Matthew N. Rocklein, Bhaskar Srinivasan, Chris Carlson
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Publication number: 20120202356Abstract: Methods of forming rutile titanium dioxide. The method comprises exposing a transition metal (such as V, Cr, W, Mn, Ru, Os, Rh, Ir, Pt, Ge, Sn, or Pb) to oxygen gas (O2) to oxidize the transition metal. Rutile titanium dioxide is formed over the oxidized transition metal. The rutile titanium dioxide is formed by atomic layer deposition by introducing a gaseous titanium halide precursor and water to the oxidized transition metal. Methods of forming semiconductor structures having rutile titanium dioxide are also disclosed.Type: ApplicationFiled: February 7, 2011Publication date: August 9, 2012Applicant: MICRON TECHNOLOGY, INC.Inventors: Tsai-Yu Huang, Vishwanath Bhat, Vassil Antonov, Chris Carlson
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Publication number: 20120199944Abstract: Methods of forming a capacitor including forming at least one aperture in a support material, forming a titanium nitride material within the at least one aperture, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The support material may then be removed and the titanium nitride material may be oxidized to form a titanium dioxide material. A second conductive material may then be formed over an outer surface of the titanium dioxide material. Capacitors, semiconductor devices and methods of forming a semiconductor device including the capacitors are also disclosed.Type: ApplicationFiled: February 7, 2011Publication date: August 9, 2012Applicant: MICRON TECHNOLOGY, INC.Inventors: Tsai-Yu Huang, Vishwanath Bhat, Vassil Antonov, Chun-I Hsieh, Chris Carlson
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Publication number: 20120161282Abstract: Methods for forming ruthenium films and semiconductor devices such as capacitors that include the films are provided.Type: ApplicationFiled: February 28, 2012Publication date: June 28, 2012Inventors: Vishwanath Bhat, Dan Gealy, Vassil Antonov
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Patent number: 8208241Abstract: Methods of forming an oxide are disclosed and include contacting a ruthenium-containing material with a tantalum-containing precursor and contacting the ruthenium-containing material with a vapor that includes water and optionally molecular hydrogen (H2). Articles including a first crystalline tantalum pentoxide and a second crystalline tantalum pentoxide on at least a portion of the first crystalline tantalum pentoxide, wherein the first tantalum pentoxide has a crystallographic orientation that is different than the crystallographic orientation of the second crystalline tantalum pentoxide, are also disclosed.Type: GrantFiled: June 4, 2008Date of Patent: June 26, 2012Assignee: Micron Technology, Inc.Inventors: Vishwanath Bhat, Vassil Antonov
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Publication number: 20120100283Abstract: Some embodiments include methods of forming capacitors. A metal oxide mixture may be formed over a first capacitor electrode. The metal oxide mixture may have a continuous concentration gradient of a second component relative to a first component. The continuous concentration gradient may correspond to a decreasing concentration of the second component as a distance from the first capacitor electrode increases. The first component may be selected from the group consisting of zirconium oxide, hafnium oxide and mixtures thereof; and the second component may be selected from the group consisting of niobium oxide, titanium oxide, strontium oxide and mixtures thereof. A second capacitor electrode may be formed over the first capacitor electrode. Some embodiments include capacitors that contain at least one metal oxide mixture having a continuous concentration gradient of the above-described second component relative to the above-described first component.Type: ApplicationFiled: December 29, 2011Publication date: April 26, 2012Applicant: MICRON TECHNOLOGY, INC.Inventors: Vassil Antonov, Vishwanath Bhat, Chris Carlson
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Patent number: 8124528Abstract: Methods for forming ruthenium films and semiconductor devices such as capacitors that include the films are provided.Type: GrantFiled: April 10, 2008Date of Patent: February 28, 2012Assignee: Micron Technology, Inc.Inventors: Vishwanath Bhat, Dan Gealy, Vassil Antonov
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Patent number: 8107218Abstract: Some embodiments include methods of forming capacitors. A metal oxide mixture may be formed over a first capacitor electrode. The metal oxide mixture may have a continuous concentration gradient of a second component relative to a first component. The continuous concentration gradient may correspond to a decreasing concentration of the second component as a distance from the first capacitor electrode increases. The first component may be selected from the group consisting of zirconium oxide, hafnium oxide and mixtures thereof; and the second component may be selected from the group consisting of niobium oxide, titanium oxide, strontium oxide and mixtures thereof. A second capacitor electrode may be formed over the first capacitor electrode. Some embodiments include capacitors that contain at least one metal oxide mixture having a continuous concentration gradient of the above-described second component relative to the above-described first component.Type: GrantFiled: June 2, 2009Date of Patent: January 31, 2012Assignee: Micron Technology, Inc.Inventors: Vassil Antonov, Vishwanath Bhat, Chris Carlson
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Publication number: 20110279979Abstract: Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.Type: ApplicationFiled: May 12, 2010Publication date: November 17, 2011Inventors: Nik Mirin, Tsai-Yu Huang, Vishwanath Bhat, Chris Carlson, Vassil Antonov
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Publication number: 20110210423Abstract: Strontium ruthenium oxide provides an effective interface between a ruthenium conductor and a strontium titanium oxide dielectric. Formation of the strontium ruthenium oxide includes the use of atomic layer deposition to form strontium oxide and subsequent annealing of the strontium oxide to form the strontium ruthenium oxide. A first atomic layer deposition of strontium oxide is preformed using water as an oxygen source, followed by a subsequent atomic layer deposition of strontium oxide using ozone as an oxygen source.Type: ApplicationFiled: May 9, 2011Publication date: September 1, 2011Inventors: Bhaskar Srinivasan, Vassil Antonov, John Smythe