Abstract: The epitaxial growth of ScxAl1-xN—GaN heterostructures and the observation of robust room temperature ferroelectric behavior are disclosed. A semiconductor device, which, for having one or more ScxAl1-xN layers of thicknesses in which ferroelectricity can be observed in the one or more ScxAl1-xN layers, is a nitride ferroelectric transistor (FeFET), which is also disclosed.

Abstract: Disclosed are ferroelectric devices including devices for performing a multiplication of analog input signals and resonators. In one aspect, a ferroelectric nanoelectromechanical device includes a first structural beam, a first input electrode disposed on a first top portion of the first structural beam, and an output electrode. The apparatus further includes a first ferroelectric film disposed on a second top portion of the first input electrode, and a first resistive layer disposed on a third top portion of the first ferroelectric film, wherein a first electrode is positioned at a first end of the first resistive layer and a second electrode is positioned at a second end of the first resistive layer.

Abstract: Techniques are disclosed implementing acoustic wave resonator (AWR) filter architectures to enable integrated solutions requiring significantly less passive components. The primary AWR filter topology leverages the use of parallel resonator branches, each having a relatively narrow bandwidth that may be combined to form an overall broadband filter response. This architecture may be further modified using electronically-controlled switching components to dynamically turn specific branches on or off to tune the filter, thus realizing a programmable broadband solution. Shunt resonators may also be added to the AWR filter topology, which may also be controlled with the use of electronically-controlled switching components to provide further control with respect to roll-off and the location and number of notch frequencies.

Abstract: Embodiments herein provide for a self-destructing chip including at least a first die and a second die. The first die includes an electronic circuit, and the second die is composed of one or more polymers that disintegrates at a first temperature. The second die defines a plurality of chambers, wherein a first subset of the chambers contain a material that reacts with oxygen in an exothermic manner. A second subset of the chambers contain an etchant to etch materials of the first die. In response to a trigger event, the electronic circuit is configured to expose the material in the first subset of chambers to oxygen in order to heat the second die to at least the first temperature, and is configured to release the etchant from the second subset of the chambers to etch the first die.

Abstract: Methods, systems, and devices are disclosed for implementing molecular sensors. In one aspect, an ion-gas sensor device includes a pre-concentration module to collect and concentrate a gas-phase chemical for analysis; a piezoelectric fan to produce an air-flow through acoustic streaming to drive the gas-phase chemical released by the pre-concentration module to one or more downstream modules; an ionizer downstream from the piezoelectric fan to ionize the gas-phase chemical; and a gas sensor downstream from the piezoelectric fan and the ionizer to detect the ionized gas-phase chemical driven by the piezoelectric fan. The piezoelectric fan can include a stack of thin-film layers that includes a thin-film piezoelectric layer. The ion-gas sensor device is made into an ultra-portable package capable of integration with mobile communication devices, such as PDA devices or smart phones.

Abstract: Embodiments herein provide for a self-destructing chip including at least a first die and a second die. The first die includes an electronic circuit, and the second die is composed of one or more polymers that disintegrates at a first temperature. The second die defines a plurality of chambers, wherein a first subset of the chambers contain a material that reacts with oxygen in an exothermic manner. A second subset of the chambers contain an etchant to etch materials of the first die. In response to a trigger event, the electronic circuit is configured to expose the material in the first subset of chambers to oxygen in order to heat the second die to at least the first temperature, and is configured to release the etchant from the second subset of the chambers to etch the first die.

Abstract: Methods, systems, and devices are disclosed for implementing molecular sensors. In one aspect, an ion-gas sensor device includes a pre-concentration module to collect and concentrate a gas-phase chemical for analysis; a piezoelectric fan to produce an air-flow through acoustic streaming to drive the gas-phase chemical released by the pre-concentration module to one or more downstream modules; an ionizer downstream from the piezoelectric fan to ionize the gas-phase chemical; and a gas sensor downstream from the piezoelectric fan and the ionizer to detect the ionized gas-phase chemical driven by the piezoelectric fan. The piezoelectric fan can include a stack of thin-film layers that includes a thin-film piezoelectric layer. The ion-gas sensor device is made into an ultra-portable package capable of integration with mobile communication devices, such as PDA devices or smart phones.