Abstract: A method includes performing ion beam sputtering with ion assisted deposition to deposit a protective layer on a surface of a body. The protective layer is a plasma resistant rare earth-containing film of a thickness less than 1000 µm. The porosity of the protective layer is below 1%. The plasma resistant rare earth-containing film consists of 40 mol% to less than 100 mol% of Y2O3, over 0 mol% to 60 mol% of ZrO2, and 0 mol% to 9 mol% of Al2O3.

Abstract: An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 ?m, wherein the plasma resistant rare earth oxide is selected from a group consisting of YF3, Er4Al2O9, ErAlO3, and a ceramic compound comprising Y4Al2O9 and a solid-solution of Y2O3—ZrO2.

Abstract: An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 ?m, wherein the plasma resistant rare earth oxide film is selected from a group consisting of an Er—Y composition, an Er—Al—Y composition, an Er—Y—Zr composition, and an Er—Al composition.

Abstract: An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 ?m, wherein the plasma resistant rare earth oxide film consists essentially of 40 mol % to less than 100 mol % of Y2O3, over 0 mol % to 60 mol % of ZrO2, and 0 mol % to 9 mol % of Al2O3.

Abstract: The implementations described herein generally relate to a process kit suitable for use in a semiconductor process chamber, which reduces edge effects and widens the processing window with a single edge ring as compared to conventional process kits. The process kit generally includes an edge ring disposed adjacent to and surrounding a perimeter of a semiconductor substrate in a plasma chamber. A dimension of a gap between the substrate and the edge ring is less than about 1000 ?m, and a height difference between the substrate and the edge ring is less than about (+/?) 300 ?m. The resistivity of the ring is less than about 50 Ohm-cm.

Abstract: A ring assembly for a substrate support is disclosed herein. The ring assembly has a ring shaped body. The ring shaped body has an inner diameter and an outer diameter, a top surface, an inner portion at the inner diameter, and an outer portion at the outer diameter. A carbon based coating is disposed on the top surface of the ring shaped body, wherein the carbon based coating is thicker on the inner portion of the ring shaped body than the outer portion of the ring shaped body.

Abstract: Methods are disclosed for etching a substrate. The method includes preferentially coating cover ring relative other chamber components in the processing chamber, while under vacuum, and while a substrate is not present in the processing chamber. The substrate is subsequently etched the processing chamber. After etching, the interior of the processing chamber is cleaned after the substrate has been removed.

Abstract: An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 ?m, wherein the plasma resistant rare earth oxide film consists essentially of 40 mol % to less than 100 mol % of Y2O3, over 0 mol % to 60 mol % of ZrO2, and 0 mol % to 9 mol % of Al2O3.

Abstract: An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 ?m, wherein the plasma resistant rare earth oxide film is selected from a group consisting of an Er—Y composition, an Er—Al—Y composition, an Er—Y—Zr composition, and an Er—Al composition.

Abstract: An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 ?m, wherein the plasma resistant rare earth oxide is selected from a group consisting of YF3, Er4Al2O9, ErAlO3, and a ceramic compound comprising Y4Al2O9 and a solid-solution of Y2O3—ZrO2.

Abstract: An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 ?m, wherein the plasma resistant rare earth oxide has a composition of 40-45 mol % of Y2O3, 5-10 mol % of ZrO2, 35-40 mol % of Er2O3, 5-10 mol % of Gd2O3, and 5-15 mol % of SiO2.

Abstract: The implementations described herein generally relate to a process kit suitable for use in a semiconductor process chamber, which reduces edge effects and widens the processing window with a single edge ring as compared to conventional process kits. The process kit generally includes an edge ring disposed adjacent to and surrounding a perimeter of a semiconductor substrate in a plasma chamber. A dimension of a gap between the substrate and the edge ring is less than about 1000 ?m, and a height difference between the substrate and the edge ring is less than about (+/?) 300 ?m. The resistivity of the ring is less than about 50 Ohm-cm.

Abstract: A method of manufacturing an article includes providing a component for an etch reactor. Ion beam sputtering with ion assisted deposition (IBS-IAD) is then performed to deposit a protective layer on at least one surface of the component, wherein the protective layer is a plasma resistant film having a thickness of less than 1000 ?m.

Abstract: Methods are disclosed for etching a substrate. The method includes preferentially coating cover ring relative other chamber components in the processing chamber, while under vacuum, and while a substrate is not present in the processing chamber. The substrate is subsequently etched the processing chamber. After etching, the interior of the processing chamber is cleaned after the substrate has been removed.

Abstract: An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 ?m, wherein the plasma resistant rare earth oxide is selected from a group consisting of YF3, Er4Al2O9, ErAlO3, and a ceramic compound comprising Y4Al2O9 and a solid-solution of Y2O3—ZrO2.

Abstract: A method of manufacturing an article includes providing a component for an etch reactor. Ion beam sputtering with ion assisted deposition (IBS-IAD) is then performed to deposit a protective layer on at least one surface of the component, wherein the protective layer is a plasma resistant film having a thickness of less than 1000 ?m.

Abstract: A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpiece support for supporting a workpiece, an optical source and scanning apparatus for scanning the optical source and the workpiece support relative to one another along a fast axis. The optical source includes an array of laser emitters arranged generally in successive rows of the emitters, the rows being transverse to the fast axis. Plural collimating lenslets overlie respective ones of the rows of emitters and provide collimation along the fast axis. The selected lenslets have one or a succession of optical deflection angles corresponding to beam deflections along the fast axis for respective rows of emitters. Optics focus light from the array of laser emitters onto a surface of the workpiece to form a succession of line beams transverse to the fast axis spaced along the fast axis in accordance with the succession of deflection angles.

Abstract: A method of manufacturing a semiconductor layer is provided. In a first deposition during a first period of time, at least one Group IIIA element and at least one Group VIA element are deposited on a substrate or on a layer optional disposed on the substrate such as a back-electrode. During a second deposition during a second period of time, at least one Group IB element and the at least one group VIA element are deposited on the substrate or the optional layer. The one Group IB element combines with the Group VIA element to form a IB2VIA composition. A first deposition state is monitored, during the second deposition by making a first plurality of measurements of a first deposition state. The second deposition is terminated or attenuated based on a function of the first plurality of measurements of the indicia of the first deposition state.

Abstract: A method of manufacturing a semiconductor layer is provided. In a first deposition during a first period of time, at least one Group IIIA element and at least one Group VIA element are deposited on a substrate or on a layer optional disposed on the substrate such as a back-electrode. During a second deposition during a second period of time, at least one Group IB element and the at least one group VIA element are deposited on the substrate or the optional layer. The one Group IB element combines with the Group VIA element to form a IB2VIA composition. A first deposition state is monitored, during the second deposition by making a first plurality of measurements of a first deposition state. The second deposition is terminated or attenuated based on a function of the first plurality of measurements of the indicia of the first deposition state.