Patents by Inventor Veeraghavan S. Basker

Veeraghavan S. Basker has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Superfilled metal contact vias for semiconductor devices
    Patent number: 8691687
    Abstract: In accordance with one aspect of the invention, a method is provided for fabricating a semiconductor element having a contact via. In such method, a hole can be formed in a dielectric layer to at least partially expose a region including at least one of semiconductor or conductive material. A seed layer can be deposited over a major surface of the dielectric layer and over a surface within the hole. In one embodiment, the seed layer can include a metal selected from the group consisting of iridium, osmium, palladium, platinum, rhodium, and ruthenium. A layer consisting essentially of cobalt can be electroplated over the seed layer within the hole to form a contact via in electrically conductive communication with the region.
    Type: Grant
    Filed: January 7, 2010
    Date of Patent: April 8, 2014
    Assignee: International Business Machines Corporation
    Inventors: James J. Kelly, Veeraghavan S. Basker, Bala S. Haran, Soon-Cheon Seo, Tuan A. Vo
  • SUPERFILLED METAL CONTACT VIAS FOR SEMICONDUCTOR DEVICES
    Publication number: 20110163449
    Abstract: In accordance with one aspect of the invention, a method is provided for fabricating a semiconductor element having a contact via. In such method, a hole can be formed in a dielectric layer to at least partially expose a region including at least one of semiconductor or conductive material. A seed layer can be deposited over a major surface of the dielectric layer and over a surface within the hole. In one embodiment, the seed layer can include a metal selected from the group consisting of iridium, osmium, palladium, platinum, rhodium, and ruthenium. A layer consisting essentially of cobalt can be electroplated over the seed layer within the hole to form a contact via in electrically conductive communication with the region.
    Type: Application
    Filed: January 7, 2010
    Publication date: July 7, 2011
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: James J. Kelly, Veeraghavan S. Basker, Bala S. Haran, Soon-Cheon Seo, Tuan A. Vo