Patents by Inventor Ven L. Lee

Ven L. Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5563801
    Abstract: A unique gate array cell and ASIC library development methodology is taught which require no new simulations or new place and route to port a given device design to a same generation process technologies which are available from different vendors. This methodology make use of the minimum design rules from different vendors without reroute of the physical database. This methodology equalizes the functionality and timing characteristics of the macrocell library on a plurality of alternate sources.
    Type: Grant
    Filed: October 6, 1993
    Date of Patent: October 8, 1996
    Assignee: nSOFT Systems, Inc.
    Inventors: Ven L. Lee, Hemraj K. Hingarh
  • Patent number: 5510999
    Abstract: In accordance with the teachings of this invention, matched performance of alternate sourced ASICs is achieved while still allowing for the smallest die size possible from each alternate source fabrication facility. In one aspect of this invention, the width of electrical interconnects are adjusted to compensate for differences in capacitances of a given interconnect path in devices fabricated by different fabrication facilities. In another aspect, transistor channel widths are adjusted to compensate for differences in capacitances of a given interconnect path in devices fabricated by different fabrication facilities. In yet another aspect of this invention, capacitance is added to the gates of transistors to decrease their speed, when manufactured by an inherently faster process.
    Type: Grant
    Filed: September 2, 1994
    Date of Patent: April 23, 1996
    Assignee: Nsoft Systems, Inc.
    Inventors: Ven L. Lee, William M. Dawson
  • Patent number: 5500805
    Abstract: In accordance with the teachings of this invention, matched performance of alternate sourced ASICs is achieved while still allowing for the smallest die size possible from each alternate source fabrication facility. In one aspect of this invention, the width of electrical interconnects are adjusted to compensate for differences in capacitances of a given interconnect path in devices fabricated by different fabrication facilities. In another aspect, transistor channel widths are adjusted to compensate for differences in capacitances of a given interconnect path in devices fabricated by different fabrication facilities. In yet another aspect of this invention, capacitance is added to the gates of transistors to decrease their speed, when manufactured by an inherently faster process.
    Type: Grant
    Filed: September 2, 1994
    Date of Patent: March 19, 1996
    Assignees: Nsoft Systems, Inc., Compaq Computer Corporation
    Inventors: Ven L. Lee, William M. Dawson, Donald L. Doud