Patents by Inventor Venita L. Dyer

Venita L. Dyer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6203869
    Abstract: A hydrogen getter comprising a thin film having a layer of inert material, and a hydrogen reactive material disposed in or attached to the layer of inert material. The hydrogen reactive material may comprise palladium oxide powder, and the layer of inert material may comprise an epoxy resin. Various forms of the hydrogen reactive material may be used including porous composite, or a solid composite comprising a powder coated organic thin film, for example. An alternative gettering system that is operative in an oxygen environment uses a thin film of hydrogen reactive material that catalyzes the reaction of hydrogen and oxygen to form water. Improved sealed microelectronic packages are also disclosed along with methods of fabricating same.
    Type: Grant
    Filed: November 12, 1996
    Date of Patent: March 20, 2001
    Inventors: Thomas K. Dougherty, O. Glenn Ramer, Venita L. Dyer
  • Patent number: 6045030
    Abstract: A method of packaging hybrid wafers or die that are interconnected using soft metal bumps, such as indium, in a sealed ceramic package. The present invention passivates the hybrid die that are to be interconnected by way of the bumps, so that the metal in the bumps (indium) does not wet the surface of the hybrid die when the ceramic package is sealed at high temperature. Vias are formed in the passivated surfaces to expose underlying contact areas. Bumps are then formed on the contact areas, and the bumped and passivated hybrid die are electrically interconnected. The ceramic package containing the electrically interconnected hybrid die is processed at a temperature above the melting temperature of the bumps to attach a ceramic cover to the ceramic package. The method is performed at a temperature well in excess of the melting temperature of the bumps (.about.155.degree. Celsius for indium), typically on the order of 325.degree. Celsius.
    Type: Grant
    Filed: March 13, 1997
    Date of Patent: April 4, 2000
    Assignee: Raytheon Company
    Inventors: O. Glenn Ramer, John J. Drab, Venita L. Dyer