Patents by Inventor Venkat Raghavan

Venkat Raghavan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070202642
    Abstract: A method for forming BiCMOS integrated circuits and structures formed according to the method. After forming doped wells and gate stacks for the CMOS devices and collector and base regions for the bipolar junction transistor, an emitter layer is formed within an emitter window. A dielectric material layer is formed over the emitter layer and remains in place during etching of the emitter layer and removal of the etch mask. The dielectric material layer further remains in place during source/drain implant doping and activation of the implanted source/drain dopants. The dielectric material layer functions as a thermal barrier, to limit out-diffusion of the emitter dopants during the activation step.
    Type: Application
    Filed: February 24, 2006
    Publication date: August 30, 2007
    Inventors: Arun Nanda, Venkat Raghavan, Nace Rossi
  • Publication number: 20070161173
    Abstract: A BiCMOS method for forming bipolar junction transistors and CMOS devices in a substrate. To avoid erosion of the bipolar junction transistor material layers, gate spacers for the CMOS devices are formed while a bipolar junction transistor photoresist layer is in place. The photoresist layer is used for etching the emitter polysilicon layer (for single polysilicon layer bipolar junction transistors) or for etching the base polysilicon layer (for double polysilicon layer bipolar junction transistors) prior to gate spacer etch.
    Type: Application
    Filed: December 15, 2006
    Publication date: July 12, 2007
    Inventors: Daniel Kerr, Mamata Patnaik, Mario Pita, Venkat Raghavan, Alan Chen
  • Publication number: 20070069295
    Abstract: A BiCMOS method for forming bipolar junction transistors and CMOS devices in a substrate. To avoid erosion of the bipolar junction transistor material layers, gate spacers for the CMOS devices are formed while a bipolar junction transistor photoresist layer is in place. The photoresist layer is used for etching the emitter polysilicon layer (for single polysilicon layer bipolar junction transistors) or for etching the base polysilicon layer (for double polysilicon layer bipolar junction transistors) prior to gate spacer etch.
    Type: Application
    Filed: September 28, 2005
    Publication date: March 29, 2007
    Inventors: Daniel Kerr, Mamata Patnaik, Mario Pita, Venkat Raghavan, Alan Chen
  • Publication number: 20060236382
    Abstract: A method, system, apparatus, and computer program product are presented to support computing systems of different enterprises that interact within a federated computing environment. Federated single-sign-on operations can be initiated at the computing systems of federation partners on behalf of a user even though the user has not established a user account at a federation partner prior to the initiation of the single-sign-on operation. For example, an identity provider can initiate a single-sign-on operation at a service provider while attempting to obtain access to a controlled resource on behalf of a user. When the service provider recognizes that it does not have a linked user account for the user that allows for a single-sign-on operation with the identity provider, the service provider creates a local user account. The service provider can also pull user attributes from the identity provider as necessary to perform the user account creation operation.
    Type: Application
    Filed: April 1, 2005
    Publication date: October 19, 2006
    Inventors: Heather Hinton, Ivan Milman, Venkat Raghavan, Shane Weeden
  • Publication number: 20060021019
    Abstract: A method and a system are presented in which federated domains interact within a federated environment. Domains within a federation can initiate federated single-sign-on operations for a user at other federated domains. A point-of-contact server within a domain relies upon a trust proxy within the domain to manage trust relationships between the domain and the federation. Trust proxies interpret assertions from other federated domains as necessary. Trust proxies may have a trust relationship with one or more trust brokers, and a trust proxy may rely upon a trust broker for assistance in interpreting assertions. When a user is provisioned at a particular federated domain, the federated domain can provision the user to other federated domains within the federated environment. A provision operation may include creating or deleting an account for a user, pushing updated user account information including attributes, and requesting updates on account information including attributes.
    Type: Application
    Filed: July 21, 2004
    Publication date: January 26, 2006
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Heather Hinton, Brian Turner, Anthony Moran, Shane Weeden, Ian Glazer, Gavis Bray, Venkat Raghavan