Abstract: Integrated circuit structures having uniformity among varying gate trench widths are described. For example, an integrated circuit structure includes a first fin, and a first gate trench over the first fin, the first gate trench having a first width. The integrated circuit structure also includes a second fin, and a second gate trench over the second fin, the second gate trench having a second width greater than the first width. The integrated circuit structure also includes a gate electrode layer having a first portion along a bottom and partially along sidewalls of the first trench, and the gate electrode layer having a second portion along a bottom and partially along sidewalls of the second trench, wherein the first portion extends along the sidewalls of the first trench to approximately the same extent as the second portion extends along the sidewalls of the second trench.

Abstract: A semiconductor structure includes a second device stacked over a first device. In an example, the first device includes (i) a first source region, (ii) a first drain region, (iii) a body including a semiconductor material extending laterally from the first source region to the first drain region, and (iv) a first gate structure at least in part wrapped around the body. The body can be, for instance, a nanoribbon, nanosheet, or nanowire. In an example, the second device comprises (i) a second source region, (ii) a second drain region, and (iii) a second gate structure at least in part laterally between the second source region and the second drain region. In an example, the second device lacks a continuous body extending laterally from the second source region to the second drain region.