Patents by Inventor Venkata Gutta

Venkata Gutta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dual-band semiconductor RF amplifier device
    Patent number: 9450545
    Abstract: There is described a dual-band semiconductor RF amplifier device. The device comprises (a) a transistor (205) having an output capacitance (CO), (b) a first shunt element (210) arranged in parallel with the output capacitance, the first shunt element comprising a first shunt inductor (L1) connected in series with a first shunt capacitor (C1), and (c) a second shunt element (220) arranged in parallel with the first shunt capacitor, the second shunt element comprising a second shunt inductor (L2) connected in series with a second shunt capacitor (C2), wherein the capacitance of the second shunt capacitor (C2) is at least two times the capacitance of the first shunt capacitor (C1). Furthermore, there is described a method of manufacturing a dual-band semiconductor RF amplifier device and a dual-band RF amplifier comprising a plurality of such amplifier devices.
    Type: Grant
    Filed: May 1, 2014
    Date of Patent: September 20, 2016
    Assignee: Ampleon Netherlands B.V.
    Inventors: Venkata Gutta, Anna Walensieniuk, Rob Volgers
  • DUAL-BAND SEMICONDUCTOR RF AMPLIFIER DEVICE
    Publication number: 20140333385
    Abstract: There is described a dual-band semiconductor RF amplifier device. The device comprises (a) a transistor (205) having an output capacitance (CO), (b) a first shunt element (210) arranged in parallel with the output capacitance, the first shunt element comprising a first shunt inductor (L1) connected in series with a first shunt capacitor (C1), and (c) a second shunt element (220) arranged in parallel with the first shunt capacitor, the second shunt element comprising a second shunt inductor (L2) connected in series with a second shunt capacitor (C2), wherein the capacitance of the second shunt capacitor (C2) is at least two times the capacitance of the first shunt capacitor (C1). Furthermore, there is described a method of manufacturing a dual-band semiconductor RF amplifier device and a dual-band RF amplifier comprising a plurality of such amplifier devices.
    Type: Application
    Filed: May 1, 2014
    Publication date: November 13, 2014
    Applicant: NXP B.V.
    Inventors: Venkata Gutta, Anna Walesieniuk, Rob Volgers