Patents by Inventor Venkatakrishnan Sriraman

Venkatakrishnan Sriraman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory Cell And Method Used In Forming A Memory Cells
    Publication number: 20240081053
    Abstract: A memory cell comprises channel material, charge-passage material, programmable material, a charge-blocking region, and a control gate. The programmable material comprises at least two regions comprising SiNx having a region comprising SiOy therebetween, where “x” is 0.5 to 3.0 and “y” is 1.0 to 3.0. Methods are disclosed.
    Type: Application
    Filed: November 10, 2023
    Publication date: March 7, 2024
    Applicant: Micron Technology, Inc.
    Inventors: Venkatakrishnan Sriraman, Dae Hong Eom, Ramanathan Gandhi, Donghua Li, Ashok Kumar Muthukumaran
  • Memory cell having programmable material comprising at least two regions comprising SiNx
    Patent number: 11856766
    Abstract: A memory cell comprises channel material, charge-passage material, programmable material, a charge-blocking region, and a control gate. The programmable material comprises at least two regions comprising SiNx having a region comprising SiOy therebetween, where “x” is 0.5 to 3.0 and “y” is 1.0 to 3.0. Methods are disclosed.
    Type: Grant
    Filed: August 2, 2021
    Date of Patent: December 26, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Venkatakrishnan Sriraman, Dae Hong Eom, Ramanathan Gandhi, Donghua Li, Ashok Kumar Muthukumaran
  • Memory Cell And Method Used In Forming A Memory Cells
    Publication number: 20230031891
    Abstract: A memory cell comprises channel material, charge-passage material, programmable material, a charge-blocking region, and a control gate. The programmable material comprises at least two regions comprising SiNx having a region comprising SiOy therebetween, where “x” is 0.5 to 3.0 and “y” is 1.0 to 3.0. Methods are disclosed.
    Type: Application
    Filed: August 2, 2021
    Publication date: February 2, 2023
    Applicant: Micron Technology, Inc.
    Inventors: Venkatakrishnan Sriraman, Dae Hong Eom, Ramanathan Gandhi, Donghua Li, Ashok Kumar Muthukumaran