Abstract: An apparatus includes a main substrate, a device, and a heat spreader. The main substrate is configured for mounting the device in a mounting location thereon and having a cavity located below the mounting location. The device is mounted in the mounting location, and the heat spreader is fitted into the cavity and coupled to the device and to a heat sink. The heat spreader is configured to conduct heat from the device to the heat sink and to provide electrical insulation between the device and the heat sink.

Abstract: An apparatus includes a main substrate, a device, and a heat spreader. The main substrate is configured for mounting the device in a mounting location thereon and having a cavity located below the mounting location. The device is mounted in the mounting location, and the heat spreader is fitted into the cavity and coupled to the device and to a heat sink. The heat spreader is configured to conduct heat from the device to the heat sink and to provide electrical insulation between the device and the heat sink.

Abstract: An apparatus includes a main substrate, a device, and a heat spreader. The main substrate is configured for mounting the device in a mounting location thereon and having a cavity located below the mounting location. The device is mounted in the mounting location, and the heat spreader is fitted into the cavity and coupled to the device and to a heat sink. The heat spreader is configured to conduct heat from the device to the heat sink and to provide electrical insulation between the device and the heat sink.

Abstract: A method for production of an optoelectronic device includes fabricating a plurality of vertical emitters on a semiconductor substrate. Respective top surfaces of the emitters are bonded to a heat sink, after which the semiconductor substrate is removed below respective bottom surfaces of the emitters. Both anode and cathode contacts are attached to the bottom surfaces so as to drive the emitters to emit light from the bottom surfaces. In another embodiment, the upper surface of a semiconductor substrate is bonded to a carrier substrate having through-holes that are aligned with respective top surfaces of the emitters, after which the semiconductor substrate is removed below respective bottom surfaces of the emitters, and the respective bottom surfaces of the emitters are bonded to a heat sink.

Abstract: An apparatus includes a main substrate, a device, and a heat spreader. The main substrate is configured for mounting the device in a mounting location thereon and having a cavity located below the mounting location. The device is mounted in the mounting location, and the heat spreader is fitted into the cavity and coupled to the device and to a heat sink. The heat spreader is configured to conduct heat from the device to the heat sink and to provide electrical insulation between the device and the heat sink.

Abstract: A method for production of an optoelectronic device includes fabricating a plurality of vertical emitters on a semiconductor substrate. Respective top surfaces of the emitters are bonded to a heat sink, after which the semiconductor substrate is removed below respective bottom surfaces of the emitters. Both anode and cathode contacts are attached to the bottom surfaces so as to drive the emitters to emit light from the bottom surfaces. In another embodiment, the upper surface of a semiconductor substrate is bonded to a carrier substrate having through-holes that are aligned with respective top surfaces of the emitters, after which the semiconductor substrate is removed below respective bottom surfaces of the emitters, and the respective bottom surfaces of the emitters are bonded to a heat sink.

Abstract: An electronic device, such as an integrated circuit chip or a multichip module, is held in place overlying a circuit board, with which it is thermal expansion mismatched, by three or more localized rigid support elements. The bottom surface of the chip is bonded to the top surface of preferably only one of these support elements and can laterally slide along the top surfaces of the others in response to heating and cooling during electrical operations of the electronic device. In addition, the electronic device is encapsulated in a soft gel that is held in place by a rigid plastic half-shell cover that is epoxy-bonded in place along its perimeter (edge).

Abstract: A triazine-based mixture, used as a multichip module device dielectric (14), is made more robust and more resistant to temperature extremes by making it to be of from twenty to sixty percent by weight of triazine and of one to ten percent by weight of siloxane-caprolactone copolymer. The foregoing mixture can be made to have a higher resolution by including zero to twenty percent by weight of novolak epoxy acrylate. The entire mixture preferably additionally comprises two to eight percent by weight of bisphenol-A diglycidyl ether monoepoxyacrylate, zero to twenty percent by weight of carboxyl-terminated butadiene nitrile rubber, two to six percent of N-vinylpyrrolidone, one to ten percent of trimethylolpropanetriacrylate, zero to five weight percent glycidoxypropyltrimethoxysilane, 0.05 to five weight percent photoinitiator, zero to two percent pigment, 0.1 to one percent surfactant, zero to 0.3 percent copper benzoylacetonate, and thirty to fifty percent solvent.