Abstract: The specification describes thin film transistor integrated circuits wherein the TFT devices are field effect transistors with inverted structures. The interconnect levels are produced prior to the formation of the transistors. This structure leads to added flexibility in processing. The inverted structure is a result of removing the constraints in traditional semiconductor field effect device manufacture that are imposed by the necessity of starting the device fabrication with the single crystal semiconductor active material. In the inverted structure the active material, preferably an organic semiconductor, is formed last in the fabrication sequence. In a preferred embodiment the inverted TFT devices are formed on a flexible printed circuit substrate.

Abstract: A process for fabricating an integrated circuit device is disclosed. The integrated circuit has a plurality of TFTs and an electrical interconnect structure. In the process, at least some constituents of the TFTs are formed on a first substrate. At least the interconnect structure is formed on a second substrate. The two substrates are laminated together to form the integrated circuit device having fully formed TFTs.

Abstract: A holographic medium uses a photosensitive polymer medium. The shelf life of the photosensitive polymer medium is improved by hermetically sealing the polymer between glass plates. The hermetic seal is designed so that high T.sub.g materials, or solder, can be used as the sealant without damage to the polymer already contained between the plates. The hermetic seal comprises metal foils attached to the plates with the edges thereof extending away from the plates in tab-like fashion. The foils are attached prior to filling the assembly with polymer. After filling, the outer edges of the foil tabs are the sealed with local heating away from the site of the polymer, or crimped using mechanical crimping.

Abstract: A device in which one or more thin film transistors are monolithically integrated with a light emitting diode is disclosed. The thin film transistor has an organic semiconductor layer. The light emitting layer of the light emitting diode is also an organic material. The device is fabricated economically by integrating the fabrication of the thin film transistor and the light emitting diode on the substrate and by employing low cost fabrication techniques.

Abstract: A process for fabricating thin film transistors in which the active layer is an organic semiconducting material with a carrier mobility greater than 10.sup.-3 cm.sup.2 /Vs and a conductivity less than about 10.sup.-6 S/cm at 20.degree. C. is disclosed. The organic semiconducting material is a regioregular (3-alkylthiophene) polymer. The organic semiconducting films are formed by applying a solution of the regioregular polymer and a solvent over the substrate. The poly (3-alkylthiophene) films have a preferred orientation in which the thiophene chains has a planar stacking so the polymer backbone is generally parallel to the substrate surface.

Abstract: A fragile device, such as an integrated circuit chip or a multichip assembly, is packaged by first dispensing a sol surrounding the sides of the device. The sol is laterally confined by means of a rim member typically made of a pre-molded plastic material. The amount of the sol dispensed is not sufficient to run over the top of the rim member. The sol is then heated to form a gel. If desired, a cover member can be put into place onto the top surface of the rim member, for the purpose of additional mechanical protection of the fragile device, for example.

Abstract: The bottom and side surfaces of an electronic device, such as an integrated circuit chip or a multichip assembly, are surrounded by a soft gel medium. The gel medium is laterally confined by a rigid plastic rim that is epoxy-bonded in place along its perimeter. A plate, made of plastic or metal, can be attached to the top surface of the rim, in order to provide a cover for the package.