Patents by Inventor Venkatasubraman Narayanan

Venkatasubraman Narayanan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6743709
    Abstract: Low resistance metal/semiconductor and metal/insulator contacts incorporate metal nanocrystals embedded in another metal having a different work function. The contacts are fabricated by placing a wetting layer of a first metal on a substrate, which may be a semiconductor or an insulator and then heating to form nanocrystals on the semiconductor or insulator surface. A second metal having a different work function than the first is then deposited on the surface so that the nanocrystals are embedded in the second material.
    Type: Grant
    Filed: August 5, 2002
    Date of Patent: June 1, 2004
    Assignee: Cornell Research Foundation, Inc.
    Inventors: Edwin C. Kan, Zengtao Liu, Venkatasubraman Narayanan
  • Patent number: 6646302
    Abstract: Low resistance metal/semiconductor and metal/insulator contacts incorporate metal nanocrystals embedded in another metal having a different work function. The contacts are fabricated by placing a wetting layer of a first metal on a substrate, which may be a semiconductor or an insulator and then heating to form nanocrystals on the semiconductor or insulator surface. A second metal having a different work function than the first is then deposited on the surface so that the nanocrystals are embedded in the second material.
    Type: Grant
    Filed: July 25, 2001
    Date of Patent: November 11, 2003
    Assignee: Cornell Research Foundation, Inc.
    Inventors: Edwin C. Kan, Zengtao Liu, Venkatasubraman Narayanan
  • Publication number: 20020192949
    Abstract: Low resistance metal/semiconductor and metal/insulator contacts incorporate metal nanocrystals embedded in another metal having a different work function. The contacts are fabricated by placing a wetting layer of a first metal on a substrate, which may be a semiconductor or an insulator and then heating to form nanocrystals on the semiconductor or insulator surface. A second metal having a different work function than the first is then deposited on the surface so that the nanocrystals are embedded in the second material.
    Type: Application
    Filed: August 5, 2002
    Publication date: December 19, 2002
    Applicant: Cornell Research Foundation, Inc.
    Inventors: Edwin C. Kan, Zengtao Liu, Venkatasubraman Narayanan
  • Publication number: 20020061646
    Abstract: Low resistance metal/semiconductor and metal/insulator contacts incorporate metal nanocrystals embedded in another metal having a different work function. The contacts are fabricated by placing a wetting layer of a first metal on a substrate, which may be a semiconductor or an insulator and then heating to form nanocrystals on the semiconductor or insulator surface. A second metal having a different work function than the first is then deposited on the surface so that the nanocrystals are embedded in the second material.
    Type: Application
    Filed: July 25, 2001
    Publication date: May 23, 2002
    Applicant: Cornell Research Foundation, Inc.
    Inventors: Edwin C. Kan, Zengtao Liu, Venkatasubraman Narayanan