Patents by Inventor Venkatesan Anathan

Venkatesan Anathan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dual work function recessed access device and methods of forming
    Patent number: 9543433
    Abstract: A recessed access device having a gate electrode formed of two or more gate materials having different work functions may reduce the gate-induced drain leakage current losses from the recessed access device. The gate electrode may include a first gate material having a high work function disposed in a bottom portion of the recessed access device and a second gate material having a lower work function disposed over the first gate material and in an upper portion of the recessed access device.
    Type: Grant
    Filed: March 18, 2014
    Date of Patent: January 10, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Venkatesan Anathan, Sanh D. Tang
  • Dual Work Function Recessed Access Device and Methods of Forming
    Publication number: 20140197484
    Abstract: A recessed access device having a gate electrode formed of two or more gate materials having different work functions may reduce the gate-induced drain leakage current losses from the recessed access device. The gate electrode may include a first gate material having a high work function disposed in a bottom portion of the recessed access device and a second gate material having a lower work function disposed over the first gate material and in an upper portion of the recessed access device.
    Type: Application
    Filed: March 18, 2014
    Publication date: July 17, 2014
    Applicant: Micron Technology, Inc.
    Inventors: Venkatesan Anathan, Sanh D. Tang
  • Semiconductor device comprising transistor structures and methods for forming same
    Patent number: 8592897
    Abstract: A method for forming an opening within a semiconductor material comprises forming a neck portion, a rounded portion below the neck portion and, in some embodiments, a protruding portion below the rounded portion. This opening may be filled with a conductor, a dielectric, or both. Embodiments to form a transistor gate, shallow trench isolation, and an isolation material separating a transistor source and drain are disclosed. Device structures formed by the method are also described.
    Type: Grant
    Filed: December 21, 2012
    Date of Patent: November 26, 2013
    Assignee: Micron Technology, Inc.
    Inventor: Venkatesan Anathan