Abstract: A straightforward and scalable solid-state synthesis at 975° C. used to generate cathode materials in the system Li(3+x)3Ni(1-x-y)CoyMn2x/3O2 {a combination of LiNiO2, Li2MnO3, and LiCoO2 as (1-x-y)LiNiO2.xLi2MnO3.yLiCoO2} is described. Coatings for improving the characteristics of the cathode material are also described. A ternary composition diagram was used to select sample points, and compositions for testing were initially chosen in an arrangement conducive to mathematical modeling. X-ray diffraction (XRD) characterization showed the formation of an ?-NaFeO2 structure, except in the region of compositions close to LiNiO2. Electrochemical testing revealed a wide range of electrochemical capacities with the highest capacities found in a region of high Li2MnO3 content. The highest capacity composition identified was Li1.222Mn0.444Ni0.167Co0.167O2 with a maximum initial discharge capacity of in the voltage range 4.6-2.0 V.

Abstract: A fluorescent lamp including a phosphor layer including (Y1-x-yGdx)AlO3:EU3+y, wherein 0.4?x?0.7 and 0?y?0.1, and at least one of each of a green and blue emitting phosphor. The resulting lamp will exhibit a white light having a color rendering index of preferably 90 or higher with a correlated color temperature of from 2500 to 10000 Kelvin. The use of (Y1-x-yGdx)AlO3:Eu3+y in phosphor blends of lamps results in high CRI light sources with increased stability and acceptable lumen maintenance over, the course of the lamp life.

Abstract: A fluorescent lamp including a phosphor layer including (Y1-x-yGdx)AlO3:EU3+y, wherein 0.4?x?0.7 and 0?y?0.1, and at least one of each of a green and blue emitting phosphor. The resulting lamp will exhibit a white light having a color rendering index of preferably 90 or higher with a correlated color temperature of from 2500 to 10000 Kelvin. The use of (Y1-x-yGdx)AlO3:Eu3+y in phosphor blends of lamps results in high CRI light sources with increased stability and acceptable lumen maintenance over, the course of the lamp life.

Abstract: In one embodiment the present invention discloses a method for making a first layer in an electroactive device comprising the steps of (i) preparing a composition by mixing at least one adhesion promoter material and at least one electroactive material; and (ii) depositing said composition onto a second electroactive layer of said electroactive device; and (iii) optionally further depositing a third electroactive layer onto the surface of said first layer opposite the second layer, wherein said composition enables adhesion between said first layer and said second layer or between said first layer and said third layer, or between said first layer and both said second layer and said third layer.

Abstract: An adaptable imaging assembly is provided. The adaptable imaging assembly includes a free-standing phosphor film configured to receive incident radiation and to emit corresponding optical signals. An electronic device is coupled to the free-standing phosphor film. The electronic device is configured to receive the optical signals from the free-standing phosphor film and to generate an imaging signal. A free-standing phosphor film is also provided and includes x-ray phosphor particles dispersed in a silicone binder. A method for inspecting a component is also provided and includes exposing the component and a free-standing phosphor film to radiation, generating corresponding optical signals with the free standing phosphor film, receiving the optical signals with an electronic device coupled to the free-standing phosphor film and generating an imaging signal using the electronic device.

Abstract: A phosphor blend comprises at least two phosphors each selected from one of the groups of phosphors that absorb UV electromagnetic radiation and emit in a region of visible light. The phosphor blend can be applied to a discharge gas radiation source to produce light sources having high color rendering index. A phosphor blend is advantageously includes the phosphor (Tb,Y,LuLa,Gd)x(Al,Ga)yO12:Ce3+, wherein x is in the range from about 2.8 to and including 3 and y is in the range from about 4 to and including 5.

Abstract: In some embodiments, the present invention is directed to compositionally-graded hybrid nanostructure-based photovoltaic devices comprising elongated semiconductor nanostructures and an amorphous semiconductor single layer with continuous gradation of doping concentration across its thickness from substantially intrinsic to substantially conductive. In other embodiments, the present invention is directed to methods of making such photovoltaic devices, as well as to applications which utilize such devices (e.g., solar cell modules).

Abstract: A phosphor blend comprises at least two phosphors each selected from one of the groups of phosphors that absorb UV electromagnetic radiation and emit in a region of visible light. The phosphor blend can be applied to a discharge gas radiation source to produce light sources having high color rendering index. A phosphor blend is advantageously includes the phosphor (Tb,Y,Lu,La,Gd)x(Al,Ga)yO12:Ce3+, wherein x is in the range from about 2.8 to and including 3 and is in the range from about 4 to and including 5.

Abstract: A photovoltaic device comprising a photovoltaic cell is provided. The photovoltaic cell includes an emitter layer comprising a crystalline semiconductor material and a lightly doped crystalline substrate disposed adjacent the emitter layer. The lightly doped crystalline substrate and the emitter layer are oppositely doped. Further, the photovoltaic device includes a back surface passivated structure coupled to the photovoltaic cell. The structure includes a highly doped back surface field layer disposed adjacent the lightly doped crystalline substrate. The highly doped back surface field layer includes an amorphous or a microcrystalline semiconductor material, wherein the highly doped back surface field layer and the lightly doped crystalline substrate are similarly doped, and wherein a doping level of the highly doped back surface field layer is higher than a doping level of the lightly doped crystalline substrate.

Abstract: A semiconductor structure is described, which includes a semiconductor substrate of one conductivity type, having a front surface and a back surface. A first amorphous semiconductor layer is applied on the front surface; and second and third amorphous semiconductor layers are disposed on portions of the back surface of the substrate. The second and third layers are each compositionally graded through their depth, from substantially intrinsic at the interface with the substrate, to substantially conductive at their opposite surfaces. In some instances, the first semiconductor layer is also compositionally graded, while in other instances, it is intrinsic in character. The semiconductor structures can function as solar cells; and modules which include a number of such cells represent another embodiment of the invention. Methods for making a photovoltaic device are also described.

Abstract: An adaptable imaging assembly is provided. The adaptable imaging assembly includes a free-standing phosphor film configured to receive incident radiation and to emit corresponding optical signals. An electronic device is coupled to the free-standing phosphor film. The electronic device is configured to receive the optical signals from the free-standing phosphor film and to generate an imaging signal. A free-standing phosphor film is also provided and includes x-ray phosphor particles dispersed in a silicone binder. A method for inspecting a component is also provided and includes exposing the component and a free-standing phosphor film to radiation, generating corresponding optical signals with the free standing phosphor film, receiving the optical signals with an electronic device coupled to the free-standing phosphor film and generating an imaging signal using the electronic device.

Abstract: A quantum-splitting fluoride-based phosphor comprises gadolinium, at least a first alkali metal, and a rare-earth metal activator. The phosphor is made in a solid-state method without using HF gas. The phosphor can be used alone or in conjunction with other phosphors in light sources and displays wherein it can be excited by VUV radiation, and increases the efficiency of these devices.

Abstract: A conformable air purification system and methods generally includes optically coupling an active coating comprising a photocatalyst material with a flexible organic light emitting device (OLED) and configuring the flexible media into a desired shape that defines the fluid passageways of then system. The organic light emitting device can be selected to emit light in the visible range when low band gap photocatalyst materials are employed.

Abstract: A method for fabricating a solar cell is provided. The method includes positioning a silicon substrate having a front surface and an opposing back surface in a plasma reaction chamber. A high-efficiency emitter structure is formed on the first surface of the silicon substrate. A back surface passivated structure is formed on the second surface of the silicon substrate.

Abstract: A solar cell having at least one hole blocking layer and at least one electron blocking layer, and methods of fabricating such devices. Specifically, a hole blocking layer is disposed between a first electrode of the solar cell and the active layer. Further, an electron blocking layer is disposed between a second electrode and the active layer. The solar cell may be formed by fabricating an anode component and a cathode component and laminating the anode component and the cathode component together.

Abstract: A quantum-splitting phosphor has a formula of ADF5:Pr3+, wherein A is at least one alkaline-earth metal and D is at least one Group-IIIB metal. The phosphor is made in a solid-state method without using hazardous HF gas. The phosphor can be used alone or in conjunction with other phosphors in light sources and displays wherein it can be excited by VUV radiation, and increase the efficiency of these devices.

Abstract: A semiconductor structure is described, including a semiconductor substrate and an amorphous semiconductor layer disposed on the front side of the semiconductor substrate, wherein the amorphous semiconductor layer is compositionally graded through its depth, from substantially intrinsic at the interface with the substrate, to substantially conductive at the opposite side. A plurality of front contacts are disposed on the backside of the substrate, and a plurality of vias formed through the substrate, wherein the plurality of vias are filled with a conductive material configured to electrically couple the amorphous semiconductor layer to one of the plurality of front contacts. Back contacts are disposed such that they are interdigitated with the front contacts. Related methods are also described.

Abstract: A semiconductor structure is described, including a semiconductor substrate of one conductivity type; and an amorphous semiconductor layer disposed on at least one of its surfaces. The amorphous semiconductor layer is compositionally graded through its depth, from substantially intrinsic at the interface with the substrate, to substantially conductive at the opposite side. Photovoltaic devices which include such a structure are also disclosed, as are solar modules made from one or more of the devices. Related methods are also described.

Abstract: A scintillator composition of a halide perovskite material of at least one ABX3 type halide perovskite, at least one activator for the matrix material and optionally at least one charge compensator to assist the incorporation of the activator in the perovskite lattice and any reaction products thereof. Radiation detectors that use the scintillators are also described, as are related methods for detecting high-energy radiation and method of producing an activated halide-perovskite based scintillator crystal.

Abstract: A photovoltaic device comprising a photovoltaic cell is provided. The photovoltaic cell includes an emitter layer comprising a crystalline semiconductor material and a lightly doped crystalline substrate disposed adjacent the emitter layer. The lightly doped crystalline substrate and the emitter layer are oppositely doped. Further, the photovoltaic device includes a back surface passivated structure coupled to the photovoltaic cell. The structure includes a highly doped back surface field layer disposed adjacent the lightly doped crystalline substrate. The highly doped back surface field layer includes an amorphous or a microcrystalline semiconductor material, wherein the highly doped back surface field layer and the lightly doped crystalline substrate are similarly doped, and wherein a doping level of the highly doped back surface field layer is higher than a doping level of the lightly doped crystalline substrate.