Patents by Inventor Venkatram Venkatasamy

Venkatram Venkatasamy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Near field transducers including electrodeposited plasmonic materials and methods of forming
    Patent number: 11015256
    Abstract: Methods of forming near field transducers (NFTs) including electrodepositing a plasmonic material.
    Type: Grant
    Filed: October 15, 2018
    Date of Patent: May 25, 2021
    Assignee: Seagate Technology LLC
    Inventors: Lien Lee, Jie Gong, Venkatram Venkatasamy, Yongjun Zhao, Lijuan Zou, Dongsung Hong, Ibro Tabakovic, Mark Ostrowski
  • NEAR FIELD TRANSDUCERS INCLUDING ELECTRODEPOSITED PLASMONIC MATERIALS AND METHODS OF FORMING
    Publication number: 20190048487
    Abstract: Methods of forming near field transducers (NFTs) including electrodepositing a plasmonic material.
    Type: Application
    Filed: October 15, 2018
    Publication date: February 14, 2019
    Inventors: Lien Lee, Jie Gong, Venkatram Venkatasamy, Yongjun Zhao, Lijuan Zou, Dongsung Hong, Ibro Tabakovic, Mark Ostrowski
  • Near field transducers including electrodeposited plasmonic materials and methods of forming
    Patent number: 10100422
    Abstract: Methods of forming near field transducers (NFTs) including electrodepositing a plasmonic material.
    Type: Grant
    Filed: September 25, 2013
    Date of Patent: October 16, 2018
    Assignee: Seagate Technology LLC
    Inventors: Lien Lee, Jie Gong, Venkatram Venkatasamy, Yongjun Zhao, Lijuan Zou, Dongsung Hong, Ibro Tabakovic, Mark Ostrowski
  • Heat assisted magnetic recording heads having bilayer heat sinks
    Patent number: 9305575
    Abstract: Disclosed herein is an apparatus that includes a near field transducer positioned adjacent to an air bearing surface of the apparatus; a first magnetic pole; and a heat sink positioned between the first magnetic pole and the near field transducer, wherein the heat sink includes a first and second portion, with the first portion being adjacent the near field transducer and the second portion being adjacent the first magnetic pole, the first portion including a plasmonic material, and the second portion including a diffusion blocking material.
    Type: Grant
    Filed: December 1, 2014
    Date of Patent: April 5, 2016
    Assignee: Seagate Technology LLC
    Inventors: Tong Zhao, Ibro Tabakovic, Michael C. Kautzky, Venkatram Venkatasamy, Jie Gong
  • HEAT ASSISTED MAGNETIC RECORDING HEADS HAVING BILAYER HEAT SINKS
    Publication number: 20150154989
    Abstract: Disclosed herein is an apparatus that includes a near field transducer positioned adjacent to an air bearing surface of the apparatus; a first magnetic pole; and a heat sink positioned between the first magnetic pole and the near field transducer, wherein the heat sink includes a first and second portion, with the first portion being adjacent the near field transducer and the second portion being adjacent the first magnetic pole, the first portion including a plasmonic material, and the second portion including a diffusion blocking material.
    Type: Application
    Filed: December 1, 2014
    Publication date: June 4, 2015
    Inventors: Tong Zhao, Ibro Tabakovic, Michael C. Kautzky, Venkatram Venkatasamy, Jie Gong
  • NEAR FIELD TRANSDUCERS INCLUDING ELECTRODEPOSITED PLASMONIC MATERIALS AND METHODS OF FORMING
    Publication number: 20150083601
    Abstract: Methods of forming near field transducers (NFTs) including electrodepositing a plasmonic material.
    Type: Application
    Filed: September 25, 2013
    Publication date: March 26, 2015
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Lien Lee, Jie Gong, Venkatram Venkatasamy, Yongjun Zhao, Lijuan Zou, Dongsung Hong, Ibro Tabakovic, Mark Ostrowski
  • Programmable metallization cells and methods of forming the same
    Patent number: 8940577
    Abstract: A programmable metallization cell (PMC) that includes an active electrode; a nanoporous layer disposed on the active electrode, the nanoporous layer comprising a plurality of nanopores and a dielectric material; and an inert electrode disposed on the nanoporous layer. Other embodiments include forming the active electrode from silver iodide, copper iodide, silver sulfide, copper sulfide, silver selenide, or copper selenide and applying a positive bias to the active electrode that causes silver or copper to migrate into the nanopores. Methods of formation are also disclosed.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: January 27, 2015
    Assignee: Seagate Technology LLC
    Inventors: Venkatram Venkatasamy, Ming Sun, Michael Xuefei Tang
  • Heat assisted magnetic recording heads having bilayer heat sinks
    Patent number: 8902719
    Abstract: Disclosed herein is an apparatus that includes a near field transducer positioned adjacent to an air bearing surface of the apparatus; a first magnetic pole; and a heat sink positioned between the first magnetic pole and the near field transducer, wherein the heat sink includes a first and second portion, with the first portion being adjacent the near field transducer and the second portion being adjacent the first magnetic pole, the first portion including a plasmonic material, and the second portion including a diffusion blocking material.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: December 2, 2014
    Assignee: Seagate Technology LLC
    Inventors: Tong Zhao, Ibro Tabakovic, Michael C. Kautzky, Venkatram Venkatasamy, Jie Gong
  • HEAT ASSISTED MAGNETIC RECORDING HEADS HAVING BILAYER HEAT SINKS
    Publication number: 20130286804
    Abstract: Disclosed herein is an apparatus that includes a near field transducer positioned adjacent to an air bearing surface of the apparatus; a first magnetic pole; and a heat sink positioned between the first magnetic pole and the near field transducer, wherein the heat sink includes a first and second portion, with the first portion being adjacent the near field transducer and the second portion being adjacent the first magnetic pole, the first portion including a plasmonic material, and the second portion including a diffusion blocking material.
    Type: Application
    Filed: March 12, 2013
    Publication date: October 31, 2013
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Tong Zhao, Ibro Tabakovic, Michael C. Kautzky, Venkatram Venkatasamy, Jie Gong
  • PROGRAMMABLE RESISTIVE MEMORY CELL WITH SACRIFICIAL METAL
    Publication number: 20130228734
    Abstract: Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. A sacrificial metal is disposed between the electrochemically active electrode and the inert electrode.
    Type: Application
    Filed: April 17, 2013
    Publication date: September 5, 2013
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Venkatram Venkatasamy, Ming Sun, Dadi Setiadi
  • Programmable resistive memory cell with sacrificial metal
    Patent number: 8435827
    Abstract: Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. A sacrificial metal is disposed between the electrochemically active electrode and the inert electrode. The sacrificial metal has a more negative standard electrode potential than the filament forming metal.
    Type: Grant
    Filed: January 11, 2012
    Date of Patent: May 7, 2013
    Assignee: Seagate Technology LLC
    Inventors: Venkatram Venkatasamy, Ming Sun, Dadi Setiadi
  • PROGRAMMABLE METALLIZATION CELLS AND METHODS OF FORMING THE SAME
    Publication number: 20130009126
    Abstract: A programmable metallization cell (PMC) that includes an active electrode; a nanoporous layer disposed on the active electrode, the nanoporous layer comprising a plurality of nanopores and a dielectric material; and an inert electrode disposed on the nanoporous layer. Other embodiments include forming the active electrode from silver iodide, copper iodide, silver sulfide, copper sulfide, silver selenide, or copper selenide and applying a positive bias to the active electrode that causes silver or copper to migrate into the nanopores. Methods of formation are also disclosed.
    Type: Application
    Filed: September 14, 2012
    Publication date: January 10, 2013
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Venkatram Venkatasamy, Ming Sun, Michael Xuefei Tang
  • Method of forming a programmable metallization memory cell
    Patent number: 8343801
    Abstract: Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.
    Type: Grant
    Filed: October 21, 2011
    Date of Patent: January 1, 2013
    Assignee: Seagate Technology LLC
    Inventors: Ming Sun, Michael Xuefei Tang, Insik Jin, Venkatram Venkatasamy, Philip George Pitcher, Nurul Amin
  • Programmable metallization cells and methods of forming the same
    Patent number: 8293571
    Abstract: A programmable metallization cell (PMC) that includes an active electrode; a nanoporous layer disposed on the active electrode, the nanoporous layer comprising a plurality of nanopores and a dielectric material; and an inert electrode disposed on the nanoporous layer. Other embodiments include forming the active electrode from silver iodide, copper iodide, silver sulfide, copper sulfide, silver selenide, or copper selenide and applying a positive bias to the active electrode that causes silver or copper to migrate into the nanopores. Methods of formation are also disclosed.
    Type: Grant
    Filed: October 29, 2010
    Date of Patent: October 23, 2012
    Assignee: Seagate Technology LLC
    Inventors: Venkatram Venkatasamy, Ming Sun, Michael Xuefei Tang
  • Programmable resistive memory cell with oxide layer
    Patent number: 8288753
    Abstract: Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.
    Type: Grant
    Filed: October 21, 2011
    Date of Patent: October 16, 2012
    Assignee: Seagate Technology LLC
    Inventors: Ming Sun, Michael Xuefei Tang, Insik Jin, Venkatram Venkatasamy, Philip George Pitcher, Nurul Amin
  • PROGRAMMABLE RESISTIVE MEMORY CELL WITH SACRIFICIAL METAL
    Publication number: 20120104349
    Abstract: Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. A sacrificial metal is disposed between the electrochemically active electrode and the inert electrode. The sacrificial metal has a more negative standard electrode potential than the filament forming metal.
    Type: Application
    Filed: January 11, 2012
    Publication date: May 3, 2012
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Venkatram Venkatasamy, Ming Sun, Dadi Setiadi
  • ELECTRODEPOSITION OF CoNiP FILMS
    Publication number: 20120080317
    Abstract: A method of forming CoNiP on a substrate that includes the steps of placing a substrate in an electroplating bath, the electroplating bath containing an electroplating composition, the electroplating composition including: a nickel source; a cobalt source; and at least about 0.1 M phosphorus source; and applying a deposition current to the substrate, wherein application of the deposition current to the substrate will cause a CoNiP layer having a thickness of at least about 500 nanometers to be electrodeposited on the substrate.
    Type: Application
    Filed: September 30, 2010
    Publication date: April 5, 2012
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Venkatram Venkatasamy, Ming Sun, Ibro Tabakovic, Michael Xuefei Tang
  • PROGRAMMABLE RESISTIVE MEMORY CELL WITH OXIDE LAYER
    Publication number: 20120040496
    Abstract: Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.
    Type: Application
    Filed: October 21, 2011
    Publication date: February 16, 2012
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Ming Sun, Michael Xuefei Tang, Insik Jin, Venkatram Venkatasamy, Philip George Pitcher, Nurul Amin
  • PROGRAMMABLE RESISTIVE MEMORY CELL WITH OXIDE LAYER
    Publication number: 20120032131
    Abstract: Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.
    Type: Application
    Filed: October 21, 2011
    Publication date: February 9, 2012
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Ming Sun, Michael Xuefei Tang, Insik Jin, Venkatram Venkatasamy, Philip George Pitcher, Nurul Amin
  • Programmable resistive memory cell with sacrificial metal
    Patent number: 8097874
    Abstract: Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. A sacrificial metal is disposed between the electrochemically active electrode and the inert electrode. The sacrificial metal has a more negative standard electrode potential than the filament forming metal.
    Type: Grant
    Filed: July 10, 2009
    Date of Patent: January 17, 2012
    Assignee: Seagate Technology LLC
    Inventors: Venkatram Venkatasamy, Ming Sun, Dadi Setiadi