Patents by Inventor Venson Lee

Venson Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Lithography method
    Patent number: 7312020
    Abstract: A lithography method for forming a plurality of patterns in a photoresist layer. A phase shift mask including a plurality of transparent main features, a plurality of first phase shift transparent regions, and a plurality of second phase shift transparent regions is provided. Each transparent main feature is surrounded by the first phase shift transparent regions and the second phase shift transparent regions interlaced contiguously along a periphery of the transparent main feature. Each of the first phase shift transparent regions has a phase shift relative to each of the second phase shift transparent regions. An exposure process is performed to irradiate the phase shift mask with light so that the patterns corresponding to the transparent main features are formed in the photoresist layer.
    Type: Grant
    Filed: November 10, 2003
    Date of Patent: December 25, 2007
    Assignee: United Microelectronics Corp.
    Inventors: Chin-Lung Lin, Chuen Huei Yang, Ming-Jui Chen, Venson Lee
  • LITHOGRAPHY METHOD
    Publication number: 20050100829
    Abstract: A lithography method for forming a plurality of patterns in a photoresist layer. A phase shift mask including a plurality of transparent main features, a plurality of first phase shift transparent regions, and a plurality of second phase shift transparent regions is provided. Each transparent main feature is surrounded by the first phase shift transparent regions and the second phase shift transparent regions interlaced contiguously along a periphery of the transparent main feature. Each of the first phase shift transparent regions has a phase shift relative to each of the second phase shift transparent regions. An exposure process is performed to irradiate the phase shift mask with light so that the patterns corresponding to the transparent main features are formed in the photoresist layer.
    Type: Application
    Filed: November 10, 2003
    Publication date: May 12, 2005
    Inventors: Chin-Lung Lin, Chuen Huei Yang, Ming-Jui Chen, Venson Lee