Patents by Inventor Ventsislav Lachiev

Ventsislav Lachiev has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Opto-electronic sensor
    Patent number: 9417186
    Abstract: Some embodiments of the present disclosure relate to an infrared (IR) opto-electronic sensor having a silicon waveguide implemented on a single silicon integrated chip. The IR sensor has a semiconductor substrate having a silicon waveguide extends along a length between a radiation input conduit and a radiation output conduit. The radiation input conduit couples radiation into the silicon waveguide, while the radiation output conduit couples radiation out from the silicon waveguide. The silicon waveguide conveys the IR radiation from the radiation input conduit to the radiation output conduit at a single mode. As the radiation is conveyed by the silicon waveguide, an evanescent field is formed that extends outward from the silicon waveguide to interact with a sample positioned between the radiation input conduit and the radiation output conduit.
    Type: Grant
    Filed: August 30, 2012
    Date of Patent: August 16, 2016
    Assignee: Infineon Technologies AG
    Inventors: Bernhard Jakoby, Ventsislav Lachiev, Thomas Grille, Peter Irsigler, Ursula Hedenig, Sokratis Sgouridis, Thomas Krotscheck Ostermann
  • Opto-Electronic Sensor
    Publication number: 20140061677
    Abstract: Some embodiments of the present disclosure relate to an infrared (IR) opto-electronic sensor having a silicon waveguide implemented on a single silicon integrated chip. The IR sensor has a semiconductor substrate having a silicon waveguide extends along a length between a radiation input conduit and a radiation output conduit. The radiation input conduit couples radiation into the silicon waveguide, while the radiation output conduit couples radiation out from the silicon waveguide. The silicon waveguide conveys the IR radiation from the radiation input conduit to the radiation output conduit at a single mode. As the radiation is conveyed by the silicon waveguide, an evanescent field is formed that extends outward from the silicon waveguide to interact with a sample positioned between the radiation input conduit and the radiation output conduit.
    Type: Application
    Filed: August 30, 2012
    Publication date: March 6, 2014
    Applicant: Infineon Technologies AG
    Inventors: Bernhard Jakoby, Ventsislav Lachiev, Thomas Grille, Peter Irsigler, Sokratis Sgouridis, Ursula Hedenig, Thomas Krotscheck Ostermann