Abstract: A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 ?m and 10 ?m or to absorb light with a light absorption maximum at a wavelength of between 2 ?m and 10 ?m.

Abstract: Plasmonic and photonic wavelength separation structures are provided for guiding plasmonic wave signals and electromagnetic signals, respectively. A separation structure includes an input waveguide configured to guide a first wave signal, an output waveguide configured to guide a second wave signal; and a resonator structure that includes a closed loop pathway and is configured to receive a portion of the first wave signal from the input waveguide by coupling and to provide the second wave signal to the output waveguide based on the portion of the first wave signal by coupling. The input waveguide, the resonator structure and the output waveguide each comprise a wave guiding material for guiding the first wave signal and the second wave signal. The wave guiding material for the plasmonic wavelength separation structure may be a plasmonic wave guiding material. The wave guiding material for the photonic wavelength separation structure may be a semiconductor material.

Abstract: A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 ?m and 10 ?m or to absorb light with a light absorption maximum at a wavelength of between 2 ?m and 10 ?m.

Abstract: A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 ?m and 10 ?m or to absorb light with a light absorption maximum at a wavelength of between 2 ?m and 10 ?m.

Abstract: A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 ?m and 10 ?m or to absorb light with a light absorption maximum at a wavelength of between 2 ?m and 10 ?m.

Abstract: Plasmonic and photonic wavelength separation structures are provided for guiding plasmonic wave signals and electromagnetic signals, respectively. A separation structure includes an input waveguide configured to guide a first wave signal, an output waveguide configured to guide a second wave signal; and a resonator structure that includes a closed loop pathway and is configured to receive a portion of the first wave signal from the input waveguide by coupling and to provide the second wave signal to the output waveguide based on the portion of the first wave signal by coupling. The input waveguide, the resonator structure and the output waveguide each comprise a wave guiding material for guiding the first wave signal and the second wave signal. The wave guiding material for the plasmonic wavelength separation structure may be a plasmonic wave guiding material. The wave guiding material for the photonic wavelength separation structure may be a semiconductor material.