Abstract: A process of forming an array of monolithically integrated thin film photovoltaic cells from a stack of thin film layers formed on an insulating substrate includes forming at least one cell isolation scribe in the stack of thin film layers. A second electrical contact layer isolation scribe is formed for each cell isolation scribe adjacent to a respective cell isolation scribe. A via scribe is formed in the stack of thin film layers between each cell isolation scribe and its respective second electrical contact layer isolation scribe. Insulating ink is disposed in each cell isolation scribe, and conductive ink is disposed in each via scribe to form a via. Conductive ink is also disposed along the top surface of the stack of thin film layers to form at least one conductive grid.

Abstract: A process of forming an array of monolithic ally integrated thin film photo voltaic cells from a stack of thin film layers formed on an insulating substrate includes forming at least one cell isolation scribe in the stack of thin film layers. A second electrical contact layer isolation scribe is formed for each cell isolation scribe adjacent to a respective cell isolation scribe. A via scribe is formed in the stack of thin film layers between each cell isolation scribe and its respective second electrical contact layer isolation scribe. Insulating ink is disposed in each cell isolation scribe, and conductive ink is disposed in each via scribe to form a via. Conductive ink is also disposed along the top surface of the stack of thin film layers to form at least one conductive grid.

Abstract: A process of forming an array of monolithic ally integrated thin film photo voltaic cells from a stack of thin film layers formed on an insulating substrate includes forming at least one cell isolation scribe in the stack of thin film layers. A second electrical contact layer isolation scribe is formed for each cell isolation scribe adjacent to a respective cell isolation scribe. A via scribe is formed in the stack of thin film layers between each cell isolation scribe and its respective second electrical contact layer isolation scribe. Insulating ink is disposed in each cell isolation scribe, and conductive ink is disposed in each via scribe to form a via. Conductive ink is also disposed along the top surface of the stack of thin film layers to form at least one conductive grid.

Abstract: A process of forming an array of monolithically integrated thin film photovoltaic cells from a stack of thin film layers formed on an insulating substrate includes forming at least one cell isolation scribe in the stack of thin film layers. A second electrical contact layer isolation scribe is formed for each cell isolation scribe adjacent to a respective cell isolation scribe. A via scribe is formed in the stack of thin film layers between each cell isolation scribe and its respective second electrical contact layer isolation scribe. Insulating ink is disposed in each cell isolation scribe, and conductive ink is disposed in each via scribe to form a via. Conductive ink is also disposed along the top surface of the stack of thin film layers to form at least one conductive grid.

Abstract: A method of manufacture of CIGS photovoltaic cells and modules involves sequential deposition of copper indium gallium diselenide compounds in multiple thin sublayers to form a composite CIGS absorber layer of a desirable thickness greater than the thickness of each sublayer. In an embodiment, the method is adapted to roll-to-roll processing of CIGS PV cells. In an embodiment, the method is adapted to preparation of a CIGS absorber layer having graded composition through the layer. In a particular embodiment, the graded composition is enriched in copper at a base of the layer. In an embodiment, each CIGS sublayer is deposited by co-evaporation of copper, indium, gallium, and selenium which react in-situ to form CIGS.

Abstract: A process described herein provides an economical means for producing the oxide-based buffer layers using a wet chemical CSD process wherein the desired buffer layer material results from the evaporation of a chemical already containing the material in solution. Thus, no residual liquid chemical elements remain after deposition, and as there is no reaction to create the buffer material, as is the case with CdS CBD, the liquid elements in CSD have sufficiently long shelf life after mixing to as to improve manufacturability and further reduce waste. Furthermore, as there is no in-chamber reaction to create the buffer material solution, there are many options for delivering said solution to the CIGS absorber layer. Finally, as the oxide films for the CdS replacement have inherently better transmission in the blue spectrum, aggressive thinning of films to improve current generation is unnecessary.

Abstract: A method of manufacture of CIGS photovoltaic cells and modules involves sequential deposition of copper indium gallium diselenide compounds in multiple thin sublayers to form a composite CIGS absorber layer of a desirable thickness greater than the thickness of each sublayer. In an embodiment, the method is adapted to roll-to-roll processing of CIGS PV cells. In an embodiment, the method is adapted to preparation of a CIGS absorber layer having graded composition through the layer. In a particular embodiment, the graded composition is enriched in copper at a base of the layer. In an embodiment, each CIGS sublayer is deposited by co-evaporation of copper, indium, gallium, and selenium which react in-situ to form CIGS.